NTPF150N65S3HF

NTPF150N65S3HF MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 24 A, 150 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 150 mW @ 10 V 24 A D G Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 121 mW Ultra Low Gate Charge (Typ. Qg = 43 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G D S Applications • • • • S POWER MOSFET Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar TO−220 FULLPAK CASE 221D MARKING DIAGRAM $Y&Z&3&K NTPF150 N65S3HF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NTPF150N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev. 1 1 Publication Order Number: NTPF150N65S3HF/D NTPF150N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 24* − Continuous (TC = 100°C) 15.2* IDM Drain Current 60* A EAS Single Pulsed Avalanche Energy (Note 2) 275 mJ IAS Avalanche Current (Note 2) 3.8 A EAR Repetitive Avalanche Energy (Note 1) 1.92 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 192 W − Derate Above 25°C 1.54 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 3.8 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 3.22 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTPF150N65S3HF NTPF150N65S3HF TO−220 FULLPACK Tube N/A N/A 50 Units www.onsemi.com 2 NTPF150N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.62 V/_C 10 mA ±100 nA 5.0 V 150 mW 67 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A 121 Forward Transconductance VDS = 20 V, ID = 12 A 14 S 1985 pF 40 pF gFS VGS = VDS, ID = 0.54 mA 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 400 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 71 pF Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance 43 nC VDS = 400 V, ID = 12 A, VGS = 10 V (Note 4) 13 nC 17 nC f = 1 MHz 5.0 W 21 ns 19 ns 63 ns 14 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 12 A, VGS = 10 V Rg = 4.7 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 24 A ISM Maximum Pulsed Source to Drain Diode Forward Current 60 A VSD Source to Drain Diode Forward Voltage 1.3 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 12 A VDD = 400 V, ISD = 12 A, dIF/dt = 100 A/ms 88 ns 306 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTPF150N65S3HF TYPICAL CHARACTERISTICS 250 ms Pulse Test TC = 25°C 8.0 V 60 VGS = 10 V VDS = 20 V 250 ms Pulse Test 7.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 6.5 V 10 6.0 V 5.5 V 1 10 TJ = 25°C TJ = 150°C 0.2 1 10 1 20 0.25 0.20 VGS = 10 V VGS = 20 V 0.15 14 28 42 VGS = 0 V 250 ms Pulse Test TJ = 150°C 1 TJ = 25°C 0.1 0.01 TJ = −55°C 0 0.5 1.0 1.5 2.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 VGS, GATE−SOURCE VOLTAGE (V) CAPACITANCE (pF) 9 ID, DRAIN CURRENT (A) 10K Ciss 1K 100 0.1 8 7 10 0.001 70 56 100K 1 6 Figure 2. Transfer Characteristics TC = 25°C 10 5 Figure 1. On−Region Characteristics 100 0 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.30 0.10 3 TJ = −55°C VDS, DRAIN−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) 0.1 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 1K VDS = 130 V ID = 12 A VDS = 400 V 8 6 4 2 0 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 50 NTPF150N65S3HF 1.2 3.0 RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS = 0 V ID = 15 mA 1.1 1.0 0.9 0.8 −50 0 50 100 ID, DRAIN CURRENT (A) 1.0 0.5 −50 Operation in this Area is Limited by RDS(on) 10 ms DC TC = 25°C TJ = 150°C Single Pulse 1 10 100 18 12 6 0 1000 25 50 75 100 125 150 VDS, DRAIN−SOURCE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 12 9 EOSS (mJ) 150 100 24 100 ms 6 3 0 50 Figure 8. On−Resistance Variation vs. Temperature 1 ms 0 0 Figure 7. Breakdown Voltage Variation vs. Temperature 10 0.01 1.5 TJ, JUNCTION TEMPERATURE (°C) 30 ms 0.1 2.0 TJ, JUNCTION TEMPERATURE (°C) 100 1 ID = 12 A VGS = 10 V 2.5 0 150 ID, DRAIN CURRENT (A) BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 130 260 390 520 650 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NTPF150N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 0.01 0.01 0.001 0.0001 t1 Single Pulse 0.00001 0.0001 t2 ZqJC(t) = r(t) x RqJC RqJC = 3.22°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.001 0.1 0.01 1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 100 1000 NTPF150N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTPF150N65S3HF + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative