NTPF190N65S3H

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Other names and brands may be claimed as the property of others. MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 190 mW, 16 A NTPF190N65S3H www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. VDSS RDS(ON) MAX ID MAX 650 V 190 mW @ 10 V 16 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 156 mW Ultra Low Gate Charge (Typ. Qg = 31 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 292 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications • • • • G S G D S Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter TO−220 FULLPAK CASE 221D MARKING DIAGRAM T190N 65S3H AYWWZZ T190N65S3H = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 1 Publication Order Number: NTPF190N65S3H/D NTPF190N65S3H ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 16* A Continuous (TC = 100°C) 10* IDM Drain Current 45* A EAS Single Pulsed Avalanche Energy (Note 2) 142 mJ IAS Avalanche Current (Note 2) 3.6 A EAR Repetitive Avalanche Energy (Note 1) 1.29 mJ dv/dt MOSFET dv/dt 120 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Pulsed (Note 1) Power Dissipation (TC = 25°C) Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 32 W 0.25 W/°C −55 to +150 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 8 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 3.88 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Shipping NTPF190N65S3H T190N65S3H TO−220 FULLPAK 50 Units / Tube www.onsemi.com 2 NTPF190N65S3H ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.63 V/_C 1 mA ±100 nA 4.0 V 190 mW 0.8 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8 A 156 Forward Transconductance VDS = 20 V, ID = 8 A 18 S VDS = 400 V, VGS = 0 V, f = 250 kHz 1600 pF 23 pF gFS VGS = VDS, ID = 1.4 mA 2.4 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 292 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 41 pF 31 nC 7.1 nC 7.9 nC 1.1 W 19 ns 7.8 ns 61 ns 3.5 ns Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 400 V, ID = 8 A, VGS = 10 V (Note 4) f = 1 MHz SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 8 A, VGS = 10 V, Rg = 10 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 16 A ISM Maximum Pulsed Source to Drain Diode Forward Current 45 A VSD Source to Drain Diode Forward Voltage 1.2 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 8 A VDD = 400 V, ISD = 8 A, dIF/dt = 100 A/ms 259 ns 3.2 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTPF190N65S3H TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 250 ms Pulse Test TC = 25°C 15 4.5 V 10 4.0 V 5 0 0.4 5 10 15 20 3 4 5 6 Figure 2. Transfer Characteristics 100 IS, REVERSE DRAIN CURRENT (A) VGS = 20 V 0.1 5 10 15 20 25 30 250 ms Pulse Test VGS = 0 V 10 1 0.1 TJ = 150°C 0 0.2 0.4 TJ = 25°C 0.6 TJ = −55°C 0.8 1.0 1.2 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Diode Forward Voltage Variation vs. Source Current and Temperature Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) f = 250 kHz VGS = 0 V 104 Ciss 103 102 Coss 101 Crss 100 0 2 TJ = −55°C Figure 1. On−Region Characteristics 0.2 10−1 TJ = 150°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 10 V 105 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) TC = 25°C 0 10 1 0.3 0 250 ms Pulse Test VDS = 20 V 5.0 V 20 106 CAPACITANCE (pF) 100 6.0 V 7.0 V 25 0 RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W) VGS = 10 V VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 30 100 200 300 400 500 600 10 VDS = 130 V ID = 8 A VDS = 400 V 8 6 4 2 0 0 10 20 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 40 NTPF190N65S3H TYPICAL CHARACTERISTICS 3.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE BVDSS, NORMALIZED DRAIN−TO− SOURCE BREAKDOWN VOLTAGE 1.2 ID = 10 mA VGS = 0 V 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 75 100 125 150 175 1.5 1.0 0.5 0 −75 −50 −25 50 75 100 125 150 175 Figure 8. On−Resistance Variation vs. Temperature 20 10 ms 100 ms 1 ms 1 Operation in this area is limited by RDS(on) 0.1 10 ms Single Pulse TC = 25°C TJ = 150°C 1 15 10 5 DC 10 100 1000 0 25 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 5 4 3 2 1 0 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6 Eoss (mJ) 25 Figure 7. Breakdown Voltage Variation vs. Temperature 10 0 0 TJ, JUNCTION TEMPERATURE (°C) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.0 TJ, JUNCTION TEMPERATURE (°C) 100 0.01 ID = 8 A VGS = 10 V 2.5 100 200 300 400 500 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Eoss vs. Drain−to−Source Voltage www.onsemi.com 5 NTPF190N65S3H r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE TYPICAL CHARACTERISTICS 1 50% Duty Cycle 20% 0.1 10% 5% PDM 2% 0.01 0.001 t1 1% t2 ZqJC(t) = r(t) x RqJC RqJC = 3.88°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 10 NTPF190N65S3H VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTPF190N65S3H + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NTPF190N65S3H PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 Y ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 9 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative