NTPF360N80S3Z

MOSFET – Power, N-Channel, SUPERFET) III 800 V, 360 mW, 13 A NTPF360N80S3Z Description 800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 800 V 360 mW 13 A D G Features • • • • • • Typ. RDS(on) = 300 mW Ultra Low Gate Charge (Typ. Qg = 25.3 nC) Low Stored Energy in Output Capacitance (Eoss = 2.72 mJ @ 400 V) 100% Avalanche Tested ESD Improved Capability with Zener Diode RoHS Compliant G D S Applications • • • • • S POWER MOSFET Adapters / Chargers LED Lighting AUX Power Audio Industrial Power TO−220 CASE 221D MARKING DIAGRAM &Z&3&K NTPF360 N80S3Z &Z &3 &K NTPF360N80S3Z = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 April, 2020 − Rev. 0 1 Publication Order Number: NTPF360N80S3Z/D NTPF360N80S3Z ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise noted) Symbol Parameter VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current Value Unit 800 V DC ±20 V AC (f > 1 Hz) ±30 Continuous (TC = 25°C) 13* Continuous (TC = 100°C) 8.2* Pulsed (Note 1) A IDM Drain Current 32.5* A EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAS Avalanche Current (Note 2) 2.0 A EAR Repetitive Avalanche Energy (Note 1) 0.31 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 10 PD Power Dissipation (TC = 25°C) 31 W 0.168 W/°C −55 to +150 °C 260 °C Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from Case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2.0 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3.25 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL RESISTANCE RATINGS Symbol Parameter Value Unit _C/W RqJC Junction−to−Case − Steady State 4.04 RqJA Junction−to−Ambient − Steady State 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTPF360N80S3Z NTPF360N80S3Z TO−220F Tube N/A N/A 50 Units www.onsemi.com 2 NTPF360N80S3Z ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 800 V VGS = 0 V, ID = 1 mA, TJ = 150_C 900 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V IGSS Gate−to−Body Leakage Current 1.1 V/_C 1 mA 1 mA 3.8 V 360 mW 0.8 VDS = 640 V, TC = 125_C VGS = ±20 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.3 mA RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 6.5 A 300 Forward Transconductance VDS = 20 V, ID = 6.5 A 13.8 S VDS = 400 V, VGS = 0 V, f = 250 kHz 1143 pF 18.1 pF gFS 2.2 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 236.4 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 34 pF Total Gate Charge at 10 V VDS = 400 V, ID = 6.5 A, VGS = 10 V (Note 4) 25.3 nC 5.3 nC 8.3 nC 4 W 21.2 ns 18.5 ns Qg(tot) Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance f = 1 MHz SWITCHING CHARACTERISTICS VDD = 400 V, ID = 6.5 A, VGS = 10 V, Rg = 25 W (Note 4) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 110 ns Turn-Off Fall Time 17.7 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source−to−Drain Diode Forward Current 13 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current 32.5 A VSD Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 6.5 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.25 A, dIF/dt = 100 A/ms 370 ns 3.0 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 NTPF360N80S3Z TYPICAL CHARACTERISTICS 35 ID, DRAIN CURRENT (A) 100 TJ = 25°C VDS = 20 V VGS = 20 V 10 V 30 7.0 V 25 5.5 V ID, DRAIN CURRENT (A) 40 20 5.0 V 15 10 4.5 V 10 TJ = 25°C 5 0 5 10 15 1 20 2 VGS = 10 V 0.50 VGS = 20 V 0.25 5 10 15 20 25 30 35 1 0.1 0.01 TJ = 150°C TJ = 25°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On Resistance vs. Drain Current Figure 4. Diode Forward Voltage vs. Current VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 100 0.1 6 ID, DRAIN CURRENT (A) 1K 1 5 VGS = 0 V 10 0.001 40 10K 10 4 Figure 2. Transfer Characteristics 0.75 0 3 Figure 1. On−Region Characteristics 1.00 0 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 100K CAPACITANCE (pF) TJ = 150°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE 0 Coss f = 250 kHz VGS = 0 V Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) 0.01 0.1 1 Crss 10 1K 10 VDD = 130 V ID = 6.5 A VDD = 400 V 8 6 4 2 0 0 6 12 18 24 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 1.2 30 NTPF360N80S3Z 1.2 2.8 ID = 10 mA RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE TYPICAL CHARACTERISTICS 1.1 1.0 0.9 −75 −50 −25 0 25 50 75 100 125 150 175 1.2 0.8 0.4 −75 −50 −25 0 25 50 75 100 125 150 175 Figure 7. Normalized BVDSS vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 7 10 6 100 ms 5 Eoss (mJ) ID, DRAIN CURRENT (A) 1.6 TJ, JUNCTION TEMPERATURE (°C) 10 ms 1 ms 1 10 ms 0.1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 2.0 TJ, JUNCTION TEMPERATURE (°C) 100 0.01 ID = 6.5 A VGS = 10 V 2.4 Single Pulse TC = 25°C 1 10 100 4 3 1s 2 DC 1 1000 0 0 100 200 300 400 500 600 700 800 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Safe Operating Area Figure 10. Eoss vs. Drain−to−Source Voltage 10 1 60% Duty Cycle 50% 0.1 20% PDM 10% 5% t1 2% 0.01 0.001 t2 ZqJC(t) = r(t) x RqJC RqJC = 4.04°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 1% Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t1, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Impedance www.onsemi.com 5 1 10 100 NTPF360N80S3Z VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTPF360N80S3Z + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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