NTPF450N80S3Z

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, N-Channel, SUPERFET) III 800 V, 450 mW, 11 A NTPF450N80S3Z Description 800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly improves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. Features • • • • • • V(BR)DSS RDS(ON) MAX ID MAX 800 V 450 mW @ VGS = 10 V 11 A N−CHANNEL MOSFET D G Typ. RDS(on) = 380 mW Ultra Low Gate Charge (Typ. Qg = 19.3 nC) Low Stored Energy in Output Capacitance (Eoss = 2.2 mJ @ 400 V) 100% Avalanche Tested ESD Improved Capability with Zener Diode RoHS Compliant Applications • • • • • www.onsemi.com S G D S Adapters / Chargers LED Lighting AUX Power Audio Industrial Power TO−220 CASE 221D MARKING DIAGRAM &Z&3&K NTPF450 N80S3Z &Z &3 &K NTPF450N80S3Z = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 August, 2020 − Rev. 0 1 Publication Order Number: NTPF450N80S3Z/D NTPF450N80S3Z MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current Value Unit 800 V DC ±20 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 11* A Continuous (TC = 100°C) 7* A Pulsed (Note 1) 25* A 32 mJ IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAS Avalanche Current (Note 2) 1.55 A EAR Repetitive Avalanche Energy (Note 1) 0.295 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 10 V/ns 29.5 W PD Power Dissipation TC = 25°C Derate above 25°C TJ, Tstg TL Operating Junction and Storage Temperature Range 0.236 W/°C −55 to +150 °C 260 °C Lead Temperature for Soldering Purposes (1/8″ from Case for 10 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 1.55 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 2.75 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit °C/W RqJC Thermal Resistance, Junction−to−Case, Max. 4.23 RqJA Thermal Resistance, Junction−to−Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTPF450N80S3Z NTPF450N80S3Z TO−220F Tube N/A N/A 50 Units www.onsemi.com 2 NTPF450N80S3Z ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 800 − − V VGS = 0 V, ID = 1 mA, TJ = 150°C 900 − − V − 1.1 − V/_C VDS = 800 V, VGS = 0 V − − 1 mA VDS = 640 V, TC = 125°C − 0.8 − VGS = ±20 V, VDS = 0 V − − ±1 mA VGS = VDS, ID = 0.24 mA 2.2 − 3.8 V OFF CHARACTERISTICS BVDSS DBVDSS/DTJ Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate−to−Source Leakage Current ID = 1 mA, Reference to 25°C ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 5.5 A − 380 450 mW Forward Transconductance VDS = 20 V, ID = 5.5 A − 11.8 − S VD = 400 V, VGS = 0 V, f = 250 kHz − 885 − pF − 15 − VDS = 0 V to 400 V, VGS = 0 V − 188 − − 27 − − 19.3 − − 4.2 − gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance Coss(er.) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10 V Qgs Gate−to−Source Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 400 V, ID = 5.5 A, VGS = 10 V (Note 4) nC − 6.6 − f = 1 MHz − 4.0 − W VDD = 400 V, ID = 5.5 A, VGS = 10 V, RG = 4.7 W (Note 4) − 13.3 − ns − 6.7 − SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn−On Rise Time td(off) Turn-Off Delay Time − 44.3 − Turn-Off Fall Time − 4.6 − Maximum Continuous Source−to−Drain Diode Forward Current − − 11 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current − − 25 A VSD Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 5.5 A − − 1.2 V trr Reverse Recovery Time − 170 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 2.75 A, diF/ dt = 100 A/ms − 1.5 − mC tf SOURCE−TO−DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 3 NTPF450N80S3Z TYPICAL CHARACTERISTICS 10 V 7.0 V 20 5.5 V 15 5.0 V 10 4.5 V 5 0 5 10 15 10 TJ = 25°C 1 20 TJ = 150°C 2 VGS = 10 V 0.75 VGS = 20 V 0.50 0.25 10 5 15 25 20 0.1 0.01 TJ = 150°C TJ = 25°C 0 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On Resistance vs. Drain Current Figure 4. Diode Forward Voltage vs. Current VGS, GATE−TO−SOURCE VOLTAGE (V) Ciss 100 Coss f = 250 kHz VGS = 0 V Crss = Cgd Coss = Cds + Cgd Ciss = Cgs + Cgd (Cds = shorted) 0.1 1 ID, DRAIN CURRENT (A) 1K 0.1 VGS = 0 V 10 0.001 30 10K 1 6 Figure 2. Transfer Characteristics 1.00 10 5 Figure 1. On−Region Characteristics 1.25 0 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.50 0 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100K CAPACITANCE (pF) VDS = 20 V VGS = 20 V ID, DRAIN CURRENT (A) 25 0 RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE 100 TJ = 25°C IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 1 10 Crss 100 1000 10 VDD = 130 V ID = 5.5 A 8 VDD = 400 V 6 4 2 0 0 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 1.2 20 NTPF450N80S3Z 1.2 3.0 ID = 10 mA RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE TYPICAL CHARACTERISTICS 1.1 1.0 0.9 0.8 −75 −50 −25 25 0 50 75 100 125 150 175 2.0 1.5 1.0 0.5 0 −75 −50 −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Normalized BVDSS vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 6 100 1 ms 10 ms 10 100 ms 5 10 ms 1s 4 Eoss (mJ) ID, DRAIN CURRENT (A) ID = 5.5 A VGS = 10 V 2.5 DC 1 RDS(on) Limit 3 2 0.1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.01 1 Single Pulse TC = 25°C 1 10 100 1000 0 0 100 200 300 400 500 600 700 800 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Safe Operating Area Figure 10. Eoss vs. Drain−to−Source Voltage 2 1 0.1 50% Duty Cycle 20% 10% PDM 5% 2% 0.01 0.001 t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 4.23°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 1% Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t1, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Impedance www.onsemi.com 5 1 10 100 NTPF450N80S3Z VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time NTPF450N80S3Z + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 7 NTPF450N80S3Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 Y ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 8 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative