NTR1P02, NVR1P02
MOSFET – Power,
P-Channel, SOT-23
-20 V, -1 A
Features
• Ultra Low On−Resistance Provides Higher Efficiency
•
V(BR)DSS
RDS(on) TYP
ID MAX
−20 V
148 mW @ −10 V
−1.0 A
P−Channel
D
G
Applications
•
•
•
•
•
DC−DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Rating
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 1 ms)
ID
IDM
−1.0
−2.67
A
Total Power Dissipation @ TA = 25°C
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance; Junction−to−Ambient
RqJA
300
°C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
Drain
1
2
P2
SOT−23
CASE 318
STYLE 21
M
•
•
•
•
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and Extends Battery Life
RDS(on) = 0.180 W, VGS = −10 V
RDS(on) = 0.280 W, VGS = −4.5 V
Power Management in Portable and Battery−Powered Products
Miniature SOT−23 Surface Mount Package Saves Board Space
Mounting Information for SOT−23 Package Provided
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
Gate
2
Source
P2
= Specific Device Code
M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTR1P02T1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
NTR1P02T3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
NVR1P02T1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2002
June, 2019 − Rev. 8
1
Publication Order Number:
NTR1P02T1/D
NTR1P02, NVR1P02
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = −10 mA)
(Positive Temperature Coefficient)
−20
V
mV/°C
32
Zero Gate Voltage Drain Current
(VDS = −20 V, VGS = 0 V, TJ = 25°C)
(VDS = −20 V, VGS = 0 V, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ±20 V, VDS = 0 V)
IGSS
−1.0
−10
mA
±100
nA
−1.9
−4.0
−2.3
V
mV/°C
0.148
0.235
0.180
0.280
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mA)
(Negative Temperature Coefficient)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = −10 V, ID = −1.5 A)
(VGS = −4.5 V, ID = −0.75 A)
RDS(on)
−1.1
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Ciss
165
Output Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Coss
110
Reverse Transfer Capacitance
(VDS = −5 V, VGS = 0 V, f = 1.0 MHz)
Crss
35
Turn−On Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
td(on)
7.0
Rise Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
tr
9.0
Turn−Off Delay Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
td(off)
9.0
Fall Time
(VDD = −15 V, ID = −1 A, VGS = −5 V, RG = 2.5 W)
tf
3.0
Total Gate Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qtot
2.5
Gate−Source Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qgs
0.75
Gate−Drain Charge
(VDS = −15 V, VGS = −5 V, ID = −0.8 A)
Qgd
1.0
pF
SWITCHING CHARACTERISTICS (Note 2)
ns
nC
BODY−DRAIN DIODE RATINGS (Note 1)
Diode Forward On−Voltage (Note 2)
(IS = −0.6 A, VGS = 0 V)
(IS = −0.6 A, VGS = 0 V, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
Reverse Recovery Stored Charge
(IS = −1 A, dIS/dt = 100 A/ms, VGS = 0 V)
V
−0.8
−0.6
trr
13.5
ta
10.5
tb
3.0
QRR
0.008
−1.0
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
NTR1P02, NVR1P02
2
TJ = 25°C
2.25
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
2.5
−4 V
2
−4.5 V
1.75
−3.5 V
1.5
1.25
1
0.75
−3 V
0.5
0.25
0
VGS = −2.5 V
1.5
0.75
1
1.75
0.25
0.5
1.25
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
VDS ≥ −10 V
1.75
1.5
1.25
1
0.75
TJ = 125°C
0.5
0
2
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 150°C
0.3
TJ = 25°C
0.2
TJ = −40°C
0.15
0.1
0.05
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
−ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = −4.5 V
0.25
0.275
0.225
TJ = 150°C
0.2
0.175
0.15
TJ = 25°C
0.125
0.1
TJ = −40°C
0.075
0.05
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
1000
2.5
VGS = 0 V
ID = −1.5 A
VGS = −10 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VGS = −10 V
0.25
Figure 3. On−Resistance versus Drain Current
and Temperature
2
4
Figure 2. Transfer Characteristics
0.45
0.35
TJ = −40°C
0.25
Figure 1. On−Region Characteristics
0.4
TJ = 25°C
1.5
1
TJ = 150°C
100
TJ = 125°C
10
0.5
0
−45
−20
5
30
55
80
105
130
155
1
1
3
5
7
9
11
13
15
17
19
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
21
300
250
C, CAPACITANCE (pF)
TJ = 25°C
Ciss
Crss
200
Ciss
150
100
Coss
50
0
10
VDS = 0 V
0
5
−VGS
Crss
VGS = 0 V
5
10
15
20
25
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTR1P02, NVR1P02
6
QT
4.5
VDS
VGS
1.5
ID = −1 A
TJ = 25°C
0
0
0.5
−VDS
1
1.5
2
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
1.001
IS, SOURCE CURRENT (AMPS)
VDD = −15 V
ID = −1 A
VGS = −5 V
t, TIME (ns)
Q2
Q1
3
tr
10
td(off)
td(on)
tf
1
1
10
0.901
0.801
VGS = 0 V
TJ = 25°C
0.701
0.601
0.501
0.401
0.301
0.201
0.101
0.001
2.0E−01 3.0E−01
100
4.0E−01
5.0E−01 6.0E−01 7.0E−01
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
NTR1P02, NVR1P02
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR1P02T1/D
