NTR4101P, NTRV4101P
MOSFET – Power, Single
P-Channel, Trench, SOT-23
-20 V
Features
•
•
•
•
•
Leading −20 V Trench for Low RDS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
NTRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) TYP
ID MAX
70 mW @ −4.5 V
−20 V
−3.2 A
90 mW @ −2.5 V
112 mW @ −1.8 V
P−Channel MOSFET
S
Applications
• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
−2.4
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−1.7
t ≤ 10 s
TA = 25°C
−3.2
Steady
State
TA = 25°C
PD
t ≤ 10 s
Continuous Drain
Current (Note 2)
Steady
State
Power Dissipation
(Note 2)
Pulsed Drain Current
ESD Capability (Note 3)
ID
TA = 85°C
TA = 25°C
0.73
−1.8
A
−1.3
W
tp = 10 ms
IDM
−18
A
C = 100 pF,
RS = 1500 W
ESD
225
V
TJ,
TSTG
−55 to
150
°C
IS
−2.4
A
EAS
16
mJ
Single Pulse Drain−to−Source Avalanche
Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH,
RG = 25 W)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
June, 2019 − Rev. 12
TR4 MG
G
1
0.42
Source Current (Body Diode)
3
Drain
W
PD
Operating Junction and Storage Temperature
MARKING DIAGRAM &
PIN ASSIGNMENT
3
1.25
TA = 25°C
D
1
2
SOT−23
CASE 318
STYLE 21
1
Gate
2
Source
TR4
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTR4101PT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NTRV4101PT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTR4101P/D
NTR4101P, NTRV4101P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
V(BR)DSS
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(VGS = 0 V, ID = −250 mA)
V
Zero Gate Voltage Drain Current (Note 4)
(VGS = 0 V, VDS = −16 V)
IDSS
−1.0
mA
Gate−to−Source Leakage Current
(VGS = ±8.0 V, VDS = 0 V)
IGSS
±100
nA
−0.72
−1.2
V
70
90
112
85
120
210
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(VGS = VDS, ID = −250 mA)
VGS(th)
Drain−to−Source On−Resistance
(VGS = −4.5 V, ID = −1.6 A)
(VGS = −2.5 V, ID = −1.3 A)
(VGS = −1.8 V, ID = −0.9 A)
RDS(on)
Forward Transconductance (VDS = −5.0 V, ID = −2.3 A)
−0.4
mW
gFS
7.5
S
Ciss
675
pF
Coss
100
Crss
75
(VGS = −4.5 V, VDS = −10 V, ID = −1.6 A)
QG(tot)
7.5
Gate−to−Source Gate Charge
(VDS = −10 V, ID = −1.6 A)
QGS
1.2
nC
Gate−to−Drain “Miller” Charge
(VDS = −10 V, ID = −1.6 A)
QGD
2.2
nC
RG
6.5
W
td(on)
7.5
ns
tr
12.6
td(off)
30.2
tf
21.0
VSD
−0.82
−1.2
V
trr
12.8
15
ns
ta
9.9
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
(VGS = 0 V, f = 1 MHz, VDS = −10 V)
Reverse Transfer Capacitance
Total Gate Charge
Gate Resistance
8.5
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = −4.5 V, VDS = −10 V,
ID = −1.6 A, RG = 6.0 W)
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, IS = −2.4 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V,
dISD/dt = 100 A/ms, IS = −1.6 A)
Reverse Recovery Charge
ns
tb
3.0
ns
Qrr
1008
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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2
NTR4101P, NTRV4101P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
TJ = 25°C
VGS = −10 V − −2.4 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
10
−2.2 V
8
6
−2.0 V
4
−1.8 V
.
−1.6 V
2
0
2
1
3
5
4
6
7
125°C
7
6
5
4
3
2
1
VDS ≥ 20 V
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
1
2
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0
0.1
VGS = −5.0 V
0.09
25°C
8
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
TJ = −55°C
9
T = 125°C
0.08
T = 25°C
0.07
0.06
T = −55°C
0.05
0.04
0.03
0.02
0.01
0
7
3
5
−ID, DRAIN CURRENT (AMPS)
1
9
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
6
TJ = 25°C
VGS = −2.5 V
VGS = −4.5 V
1
3
5
4
6
7
8
−ID, DRAIN CURRENT (AMPS)
2
9
10
Figure 4. On−Resistance vs. Drain Current and
Temperature
Figure 3. On−Resistance vs. Drain Current and
Temperature
100000
VGS = 0 V
ID = −1.6 A
10000
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
1000
TJ = 125°C
100
10
0.6
0.4
−50
TJ = 150°C
−25
0
25
50
75
100
125
150
1.0
0
TJ, JUNCTION TEMPERATURE (°C)
2
4
6
8
10
12
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
16
NTR4101P, NTRV4101P
C, CAPACITANCE (pF)
800
4.0
TJ = 25°C
VGS = 0 V
QT
3.5
Ciss
3.0
2.5
600
VDS
2.0
400
VGS
Qgd
Qgs
1.5
1.0
Coss
200
ID = −1.6 A
TJ = 25°C
0.5
0
Crss
0
2
4
6
8
12
10
14
16
18
20
0
2
4
6
Qg, TOTAL GATE CHARGE (nC)
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
5
−IS, SOURCE CURRENT (A)
VDD = −10 V
ID = −1.6 A
VGS = −4.5 V
100
td(off)
tf
tr
td(on)
10
VGS = 0 V
TJ = 25°C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
1
1
10
0
100
0
RG, GATE RESISTANCE (OHMS)
0.2
0.4
VGS ≤ 10 V
Single Pulse
TC = 25°C
10 ms
100 ms
1 ms
1
10 ms
0.1
0.01
0.01
0.8
1.0
Figure 10. Diode Forward Voltage vs. Current
100
10
0.6
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
ID, DRAIN CURRENT (A)
t, TIME (ns)
1000
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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