NTS1260MFST1G

NTS1260MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 12 AMPERES 60 VOLTS 5,6 1,2,3 Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation A 1 • A SO−8 FLAT LEAD CASE 488AA STYLE 2 Mechanical Characteristics: • • • • MARKING DIAGRAM Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements TH1260 A Y W ZZ A C TH1260 AYWWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTS1260MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTS1260MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 0 1 Publication Order Number: NTS1260MFS/D NTS1260MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 Average Rectified Forward Current (Rated VR, TC = 137°C) IF(AV) 12 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 134°C) IFRM 24 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 210 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −55 to +150 °C EAS 200 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 2 ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Max Unit RθJC 2.0 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 1) (iF = 6.0 Amps, TJ = 25°C) (iF = 12 Amps, TJ = 25°C) Typ Max 0.46 0.53 − 0.60 0.39 0.48 − 0.58 − 15 90 20 vF (iF = 6.0 Amps, TJ = 125°C) (iF = 12 Amps, TJ = 125°C) Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit V iR mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NTS1260MFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C 10 TA = 125°C 1 TA = 25°C TA = −55°C 0.1 TA = 25°C 1 TA = −55°C 0.1 0.2 0.3 0.4 0.6 0.5 0.7 0.8 0 0.1 0.2 0.4 0.3 0.5 0.7 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) TA = 125°C 0.1 0 0.9 1.E+00 1.E−01 TA = 150°C 1.E−02 1.E−01 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 125°C 1.E−03 1.E−04 1.E−04 1.E−05 TA = 25°C TA = 25°C 1.E−05 1.E−06 1.E−06 10 15 20 25 30 35 40 45 50 55 60 10 15 20 25 30 35 40 50 45 55 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics TJ = 25°C 1000 100 0.1 5 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) 5 10,000 C, JUNCTION CAPACITANCE (pF) TA = 150°C 10 1 10 26 24 22 20 18 16 14 12 10 8 6 4 2 0 DC Square Wave RqJC = 2.0°C/W 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 140 60 NTS1260MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 40 IPK/IAV = 10 IPK/IAV = 20 36 32 28 IPK/IAV = 5 24 20 16 12 Square Wave 8 dc 4 0 0 2 4 6 10 8 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% (DUTY CYCLE) R(t) (C/W) 10 1 20% 10% 5.0% 2.0% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 1.0 10 100 1000 PULSE TIME (s) Figure 8. Typical Thermal Characteristics R(t) (C/W) 10 1 50% (DUTY CYCLE) 20% 0.1 10% 5.0% 2.0% 1.0% 0.01 SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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