NTS245SF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free and Halide−Free Devices
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
Mechanical Characteristics:
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
•
•
•
•
•
Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Automotive LED Lighting
2ARMG
G
2AR
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTS245SFT1G
SOD−123
(Pb−Free)
3,000/
Tape & Reel
NTS245SFT3G
SOD−123
(Pb−Free)
10,000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 0
1
Publication Order Number:
NTS245SF/D
NTS245SF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(TL = 125°C)
IO
2.0
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 120°C)
IFRM
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Tstg, TJ
−65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Storage and Operating Junction Temperature Range (Note 1)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
YJCL
23
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
85
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
RqJA
330
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 2.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
V
0.63
0.55
90
5
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
NTS245SF
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 125°C
1
TA = 25°C
TA = −55°C
0.1
TA = 125°C
1
TA = 25°C
TA = −55°C
0.2
1.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1.8
1.E−01
TA = 150°C
1.E−03
TA = 125°C
1.E−04
TA = 90°C
1.E−05
TA = 25°C
1.E−06
TA = 150°C
1.E−02
TA = 125°C
1.E−03
TA = 90°C
1.E−04
TA = 25°C
1.E−05
1.E−07
1.E−06
5
25
15
45
35
15
25
45
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
TJ = 25°C
100
10
0.1
5
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
1000
C, JUNCTION CAPACITANCE (pF)
TA = 150°C
10
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
4
DC
3
Square Wave
2
1
RqJL = 24.4°C/W
0
10
30
50
70
90
110
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
130
150
NTS245SF
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
4
IPK/IAV
= 20
IPK/IAV = 10
3
IPK/IAV = 5
2
Square Wave
1
DC
0
0
0.5
1.0
2.0
1.5
2.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
R(t) (°C/W)
20%
10 10%
5%
2%
1
1%
0.1
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, PULSE TIME (s)
Figure 8. Thermal Characteristics
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4
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
DATE 10 MAY 2013
SCALE 4:1
E
D
q
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
END VIEW
TOP VIEW
q
HE
SIDE VIEW
2X
b
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
(Note: Microdot may be in either location)
4.20
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
RECOMMENDED
SOLDERING FOOTPRINT*
1.22
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
XXXMG
G
L
BOTTOM VIEW
2X
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
GENERIC
MARKING DIAGRAM*
c
2X
A1
DIM
A
A1
b
c
D
E
L
HE
q
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2X
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
1.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11184D
SOD−123FL
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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