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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTS4001N, NVS4001N
MOSFET – Single,
N-Channel, Small Signal,
SC-70
30 V, 270 mA
http://onsemi.com
Features
•
•
•
•
•
V(BR)DSS
Low Gate Charge for Fast Switching
Small Footprint − 30% Smaller than TSOP−6
ESD Protected Gate
AEC−Q101 Qualified and PPAP Capable − NVS4001N
These Devices are Pb−Free and are RoHS Compliant
RDS(on) TYP
ID Max
1.0 W @ 4.0 V
30 V
270 mA
1.5 W @ 2.5 V
SC−70/SOT−323 (3 LEADS)
Applications
•
•
•
•
Low Side Load Switch
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
Gate
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Source
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
270
mA
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °C
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
PD
330
t =10 ms
IDM
800
mA
TJ, TSTG
−55 to
150
°C
Pulsed Drain Current
TA = 85 °C
Operating Junction and Storage Temperature
1
Drain
2
(Top View)
MARKING DIAGRAM &
PIN ASSIGNMENT
3
200
D
mW
Source Current (Body Diode)
IS
270
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
1
3
2
TD M G
G
SC−70 / SOT−323
CASE 419
STYLE 8
TD
M
G
2
1
G
S
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTS4001NT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
NVS4001NT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
June, 2019 − Rev. 5
1
Publication Order Number:
NTS4001N/D
NTS4001N, NVS4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
60
mV/ °C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±1.0
mA
VGS(TH)
VGS = VDS, ID = 100 mA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.8
1.2
−3.4
mV/ °C
VGS = 4.0 V, ID = 10 mA
1.0
1.5
VGS = 2.5 V, ID = 10 mA
1.5
2.0
VDS = 3.0 V, ID = 10 mA
80
W
mS
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
20
33
19
32
7.25
12
0.9
1.3
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.2
td(ON)
17
tr
23
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
pF
nC
0.2
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(OFF)
VGS = 4.5 V, VDD = 5.0 V,
ID = 10 mA, RG = 50 W
tf
ns
94
82
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V,
IS = 10 mA
TJ = 25°C
0.65
TJ = 125°C
0.43
VGS = 0 V, dIS/dt = 8.0 A/ms,
IS = 10 mA
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
5.0
0.7
V
ns
NTS4001N, NVS4001N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 10 V to 3 V
0.16
2.5 V
0.14
2.25 V
0.12
0.1
0.08
2V
0.06
0.04
1.75 V
1.5 V
0.02
1.25
0.4
0.8
1.2
1.6
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.1
TJ = 25°C
0.08
0.06
TJ = 125°C
0.04
25°C
0.02
TJ = −55°C
0
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.2
1.4
1.6
2
1.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 125°C
1.0
0.75
TJ = 25°C
0.5
TJ = −55°C
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
0.2
0.18
1.25
VGS = 4.5 V
0.75
1.6
VGS = 10 V
0.5
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
10000
ID = 0.01 A
VGS = 10 V
VGS = 0 V
1.4
1000
1.2
1
0.8
0.6
TJ = 150°C
100
0.4
TJ = 125°C
0.2
0
−50
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
TJ = 25°C
1.0
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
2.2
−25
0
25
50
75
100
125
150
10
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTS4001N, NVS4001N
C, CAPACITANCE (pF)
50
VDS = 0 V
40
Ciss
30
Crss
TJ = 25°C
VGS = 0 V
20
Ciss
Coss
10
0
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Crss
5
VGS
0
VDS
5
10
15
20
25
5
QG
4
3
QGS
2
1
0
ID = 0.1 A
TJ = 25°C
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
0.08
0.4
0.8
0.2
0.6
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
0.1
QGD
VGS = 0 V
TJ = 25°C
0.06
0.04
0.02
0
0.5
0.55
0.65
0.6
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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4
0.75
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
0.016
0.010
0.087
0.053
0.055
0.022
0.095
XX MG
G
SOLDERING FOOTPRINT*
0.65
0.025
1
XX
M
G
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.008
0.079
MAX
0.040
0.004
GENERIC
MARKING DIAGRAM
L
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
c
A2
A1
0.65
0.025
MIN
0.032
0.000
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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