NTST40120CTG

NTST40120CT, NTSJ40120CTG, NTSB40120CT-1G, NTSB40120CTG, NTSB40120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.43 V at IF = 5 A http://onsemi.com VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 120 VOLTS Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • PIN CONNECTIONS Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 1 2, 4 3 4 4 Typical Applications • Switching Power Supplies including Notebook/Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing Diodes Reverse Battery Protection Instrumentation 1 2 12 3 TO−220 CASE 221A STYLE 6 3 I2PAK CASE 418D STYLE 3 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 3 TO−220FP CASE 221AH D2PAK CASE 418B ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 6 1 Publication Order Number: NTST40120CT/D NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG, NTSB40120CTT4G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 120°C) Symbol Value Unit VRRM VRWM VR 120 V IF(AV) A Per Device Per Diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125°C) 40 20 IFRM A Per Device Per Diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 80 40 IFSM 250 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient Symbol NTST40120CTG, NTSB40120CT−1G NTSB40120CTG NTSJ40120CTG Unit RqJC RqJA 1.3 70 0.79 46.3 4.0 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 20 A, TJ = 25°C) Typ Max 0.50 0.60 0.78 − − 0.91 0.43 0.53 0.63 − − 0.71 16 16 − − mA mA − 30 500 100 mA mA vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) (IF = 20 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) V IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG, NTSB40120CTT4G 100 100 TA = 150°C TA = 150°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS TA = 25°C 10 TA = 125°C 1.0 0.1 10 TA = 125°C 1.0 0.1 0.01 TA = 25°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 120 1000 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 40 RqJC = 1.3°C/W 35 dc 30 25 20 SQUARE WAVE 15 10 5 0 0 20 Figure 3. Typical Junction Capacitance 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg 18 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 RqJC = 1.3°C/W dc SQUARE WAVE PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 110 Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 100 0.1 50 70 90 100 40 60 80 VR, REVERSE VOLTAGE (VOLTS) 30 IPK/IAV = 5 16 SQUARE WAVE 14 IPK/IAV = 10 10 IPK/IAV = 20 8 6 4 2 TA = 150°C 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 0 140 dc 12 2 4 6 8 10 12 14 16 18 20 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating, Case Figure 6. Forward Power Dissipation http://onsemi.com 3 22 24 NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG, NTSB40120CTT4G TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response for NTST40120CT and NTSB40120CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response for NTSJ40120CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response for NTSB40120CTG http://onsemi.com 4 NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG, NTSB40120CTT4G ORDERING INFORMATION Package Shipping† NTST40120CTG TO−220 (Pb−Free) 50 Units / Rail NTST40120CTH TO−220 (Pb−Free and Halide−Free) 50 Units / Rail NTSJ40120CTG TO−220FP (Pb−Free and Halide−Free) 50 Units / Rail NTSB40120CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSB40120CTG D2PAK (Pb−Free) 50 Units / Rail NTSB40120CTT4G D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS AYWW TS40120Cx AKA AYWW TS40120CG AKA AYWW TS40120CG AKA TO−220 TO−220FP I2PAK A Y WW AKA x G H = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package http://onsemi.com 5 AYWW TS40120CG AKA D2PAK MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A E B P E/2 0.14 SCALE 1:1 Q D M B A A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE b2 c b 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA­ SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 DIM A A1 A2 b b2 c D E e H1 L L1 P Q GENERIC MARKING DIAGRAM* A NOTE 6 DATE 30 SEP 2014 NOTE 6 H1 D D XX XXXXXXXXX AWLYWWG A SECTION A−A ALTERNATE CONSTRUCTION 1 STYLE 1: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 3. GATE STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE DOCUMENT NUMBER: 98AON52577E DESCRIPTION: A WL Y WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−220 FULLPACK, 3−LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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