NTST60100CT,
NTSB60100CT-1,
NTSB60100CT,
NTSJ60100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.36 V at IF = 5 A
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
•
www.onsemi.com
VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER
RECTIFIERS 60 AMPERES,
100 VOLTS
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
Halide Free Devices Available
These are Pb−Free Packages
PIN CONNECTIONS
1
2, 4
3
4
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
3
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
4
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
1
2
TO−220FP
CASE 221AH
D2PAK
CASE 418B
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTST60100CT/D
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current at Rated VR
NTST60100CT, NTSB60100CT−1 and NTSB60100CT
(Rated VR, TC = 115°C) per Device
(Rated VR, TC = 125°C) per Diode
NTSJ60100CT
(Rated VR, TC = 80°C) per Device
(Rated VR, TC = 75°C) per Diode
IF(AV)
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz)
NTST60100CT, NTSB60100CT−1 and NTSB60100CT
(Rated VR, TC = 105°C) per Device
(Rated VR, TC = 120°C) per Diode
NTSJ60100CT
(Rated VR, TC = 65°C) per Device
(Rated VR, TC = 55°C) per Diode
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
250
A
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
A
60
30
30
30
A
120
60
30
30
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
NTST60100CT,
NTSB60100CT−1,
NTSB60100CT
Symbol
Rating
Maximum Thermal Resistance
Junction−to−Case
Per Diode
Per Device
RqJC
NTSJ60100CT
1.10
0.67
Unit
°C/W
3.60
3.17
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Symbol
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
(IF = 20 A, TJ = 25°C)
(IF = 30 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
(IF = 20 A, TJ = 125°C)
(IF = 30 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 80 V, TJ = 25°C)
(VR = 80 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.45
0.52
0.58
0.63
0.73
−
−
0.63
−
0.84
0.36
0.45
0.53
0.58
0.66
−
−
0.58
−
0.70
20
15
500
20
mA
mA
40
30
1000
85
mA
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
www.onsemi.com
2
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 125°C
10
TA = 150°C
1
TA = 25°C
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TA = 25°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
TA = 150°C
1.E−02
TA = 150°C
1.E−01
TA = 125°C
1.E−03
TA = 125°C
1.E−02
1.E−04
1.E−03
TA = 25°C
1.E−05
0
10
20
30
40
50
60
70
80
90 100
TA = 25°C
1.E−04
0
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
60
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
C, JUNCTION CAPACITANCE (pF)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
TJ = 25°C
1000
100
10
TA = 150°C
0.1
1.0
1.E+00
1.E−06
TA = 125°C
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
20
10
IPK/IAV = 5
TJ = 150°C
50
40
Square Wave
30
DC
20
10
0
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Typical Junction Capacitance
Figure 6. Forward Power Dissipation
www.onsemi.com
3
40
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
50
120
NTST60100CTG; NTSB60100CT−1; NTSB60100CT
RqJC = 1.1°C/W
DC
40
Square Wave
30
20
10
0
0 10
30
50
70
90
110
130
40
20
0 10
30
50
70
90
110
130
TC, CASE TEMPERATURE (°C)
Figure 7. Current Derating per Diode
Figure 8. Current Derating per Device
150
120
NTSJ60100CTG, RqJC = 3.17°C/W
NTSJ60100CTG, RqJC = 3.6°C/W
DC
40
Square Wave
20
10
0 10
30
100
IF(AV), AVERAGE FORWARD
CURRENT (A)
IF(AV), AVERAGE FORWARD
CURRENT (A)
Square Wave
60
TC, CASE TEMPERATURE (°C)
50
0
DC
80
0
150
60
30
NTST60100CTG; NTSB60100CT−1; NTSB60100CT
RqJC = 0.67°C/W
100
IF(AV), AVERAGE FORWARD
CURRENT (A)
IF(AV), AVERAGE FORWARD
CURRENT (A)
60
50
70
90
110
130
80
60
40
Square Wave
20
0
150
DC
0 10
30
50
70
90
110
130
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 9. Current Derating per Diode
Figure 10. Current Derating per Device
www.onsemi.com
4
150
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
TYPICAL CHARACTERISTICS
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
P(pk)
5%
t1
2%
t2
1%
0.01
0.000001
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
100
10
1000
t, PULSE TIME (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 11. NTST60100CT, NTSB60100CT−1G and NTSB60100CT Typical Transient Thermal Response
10
50% Duty Cycle
1 20%
10%
5%
0.1
2%
1%
P(pk)
t1
0.01
0.001
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 12. NTSJ60100CTG Typical Transient Thermal Response
www.onsemi.com
5
10
100
1000
NTST60100CT, NTSB60100CT−1, NTSB60100CT, NTSJ60100CT
ORDERING INFORMATION
Package
Shipping
NTST60100CTG
Device
TO−220AB
(Pb−Free)
50 Units / Rail
NTSB60100CT−1G
I2PAK
(Pb−Free)
50 Units / Rail
NTSB60100CTG
D2PAK
(Pb−Free)
50 Units / Rail
NTSB60100CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
TO−220FP
(Halide−Free, Pb−Free)
50 Units / Rail
NTSJ60100CTG
MARKING DIAGRAMS
AY WW
TS60100Cx
AKA
TO−220AB
AY WW
TS60100CG
AKA
AY WW
TS60100CG
AKA
I2PAK
A
Y
WW
AKA
x
G
H
D2PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
www.onsemi.com
6
AYWW
TS60100CG
AKA
TO−220FP
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
SCALE 1:1
Q
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA
SURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
GENERIC
MARKING DIAGRAM*
A
NOTE 6
DATE 30 SEP 2014
NOTE 6
H1
D
D
XX
XXXXXXXXX
AWLYWWG
A
SECTION A−A
ALTERNATE CONSTRUCTION
1
STYLE 1:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
DOCUMENT NUMBER:
98AON52577E
DESCRIPTION:
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−220 FULLPACK, 3−LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE D
DATE 16 OCT 2007
C
E
V
−B−
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
D 3 PL
0.13 (0.005) M T B
STYLE 1:
PIN 1.
2.
3.
4.
DESCRIPTION:
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
J
G
DOCUMENT NUMBER:
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
BASE
COLLECTOR
EMITTER
COLLECTOR
98ASB16716C
I2PAK (TO−262)
H
M
STYLE 2:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 3:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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