NTSV20H120CT
Low Forward Voltage
Trench-based Schottky
Rectifier
Features
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• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
1
2, 4
3
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
TO−220AB
CASE 221A
STYLE 6
3
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
AY WW
TSV20H12G
AKA
TSV20H12G = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
AKA
= Polarity Designator
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTSV20H120CT/D
NTSV20H120CT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 124°C)
(Rated VR, TC = 139°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 122°C)
(Rated VR, Square Wave, 20 kHz, TC = 137°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
120
V
IF(AV)
A
20
10
IFRM
A
40
20
IFSM
125
A
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Typical Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
1.7
50
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.679
0.931
−
1.03
0.562
0.653
−
0.71
2.3
2.8
5.0
4.6
Unit
V
mA
mA
35
20
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV20H120CTG
Package
Shipping
TO−220AB
(Pb−Free)
50 Units / Rail
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2
NTSV20H120CT
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 125°C
1
TA = 25°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
TA = −40°C
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
10
TA = 125°C
1
TA = 25°C
0.1
1.6
TA = −40°C
0
0.8
0.6
1.0
1.2
1.4
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.6
1.E+00
1.E−01
TA = 150°C
1.E−02
TA = 150°C
1.E−02
TA = 125°C
1.E−03
TA = 125°C
1.E−03
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
1.E−06
0
10
20 30
40 50
60
70 80
1.E−07
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
0
10
20
30
40 50
60 70
80
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
20
RqJC = 1.7°C/W
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
1000
100
10
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
1.E−07
TA = 150°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
0.1
1
10
dc
15
Square Wave
10
5
0
100
40 50
60
70
80
90 100 110 120 130 140 150
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Leg
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3
NTSV20H120CT
40
30
RqJC = 1.7°C/W
35
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
dc
30
25
Square Wave
20
15
10
5
0
40 50
60
70
80
90 100 110 120 130 140 150
IPK/IAV = 20
25
IPK/IAV = 10
TJ = 150°C
20
IPK/IAV = 5
15
10
Square Wave
5
0
dc
0
1
2
3
4
6
5
7
8
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, Device
Figure 8. Forward Power Dissipation
9
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
10
1 50%
20%
10%
0.1
0.01
5%
P(pk)
2%
t1
1%
DUTY CYCLE, D = t1/t2
t2
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response
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4
10
100
1000
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