NTTFD2D8N03P1E

DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, PowerTrench[ Power Clip, Symmetric Dual 30 V FET V(BR)DSS Q1 30 V Q2 30 V NTTFD2D8N03P1E Features • • • • RDS(ON) MAX ID MAX 2.5 mW @ 10 V 3.0 mW @ 4.5 V 2.5 mW @ 10 V 3.0 mW @ 4.5 V 80 A 80 A ELECTRICAL CONNECTION Small Footprint (3.3mm x 3.3mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant Typical Applications • DC−DC Converters • System Voltage Rails MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Q1 Q2 Unit Drain−to−Source Voltage VDSS 30 30 V Gate−to−Source Voltage VGS +16 −12 +16 −12 V PIN1 ID 80 80 A 58 58 WQFN12 3.3X3.3, 0.65P CASE 510CJ PD 26 26 W ID 21.1 21.1 A 15.2 15.2 PD 1.79 1.79 W ID 16.1 16.1 A 11.6 11.6 PD 1.04 1.04 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 327 356 A Single Pulse Drain−to−Source Avalanche Energy Q1: IL = 33.3 Apk, L = 0.1 mH (Note 4) Q2: IL = 34.3 Apk, L = 0.1 mH (Note 4) EAS 55.4 58.8 mJ Operating Junction and Storage Temperature TJ, Tstg −55 to + 150 °C TL 260 °C Parameter Continuous Drain Current RqJC (Note 3) Power Dissipation RqJC (Note 3) Continuous Drain Current RqJA (Notes 1, 3) Power Dissipation RqJA (Notes 1, 3) Continuous Drain Current RqJA (Notes 2, 3) Power Dissipation RqJA (Notes 2, 3) TC = 25°C Steady State TC = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TA = 25°C Steady State Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code ORDERING INFORMATION TA = 85°C TA = 25°C 3ESN A Y WW ZZ 3ESN AYWWZZ Device NTTFD2D8N03P1E Package Shipping† WQFN12 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad. 2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. RqJC is determined by the user’s board design. 4. Q1 100% UIS tested at L = 0.1 mH, IAS = 21.1 A. Q2 100% UIS tested at L = 0.1 mH, IAS = 21.1 A. 5. This device is Class 1B ESD HBM Rating. © Semiconductor Components Industries, LLC, 2018 June, 2022 − Rev. 4 1 Publication Order Number: NTTFD2D8N03P1E/D NTTFD2D8N03P1E THERMAL RESISTANCE MAXIMUM RATINGS Symbol Q1 Max Q2 Max Unit Junction−to−Case − Steady State (Notes 1, 3) Parameter RqJC 4.8 4.8 °C/W Junction−to−Ambient − Steady State (Notes 1, 3) RqJA 70 70 Junction−to−Ambient − Steady State (Notes 2, 3) RqJA 120 120 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition FET Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA Q1 30 VGS = 0 V, ID = 1 mA Q2 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 1 mA, ref to 25°C Q1 17.9 ID = 1 mA, ref to 25°C Q2 17.2 Zero Gate Voltage Drain Current IDSS Max Unit OFF CHARACTERISTICS Gate−to−Source Leakage Current IGSS VGS = 0 V, VDS = 24 V TJ = 25°C V mV/°C Q1 1.0 Q2 1.0 VDS = 0 V, VGS = +16 V / −12 V Q1 ±100 VDS = 0 V, VGS = +16 V / −12 V Q2 ±100 VGS = VDS, ID = 400 mA Q1 1.2 2.2 VGS = VDS, ID = 400 mA Q2 1.2 2.2 ID = 400 mA, ref to 25°C Q1 −4.3 ID = 400 mA, ref to 25°C Q2 −4.5 VGS = 10 V, ID = 18 A Q1 2.0 2.5 2.6 3.0 1.8 2.5 2.4 3.0 mA nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 16 A VGS = 10 V, ID = 18 A Q2 VGS = 4.5 V, ID = 16 A Forward Transconductance Gate−Resistance gFS RG VDS = 5 V, ID = 18 A Q1 129 VDS = 5 V, ID = 18 A Q2 141 TA = 25°C Q1 0.68 Q2 0.75 Q1 1500 Q2 1521 Q1 483 Q2 498 Q1 29 Q2 22 V mV/°C mW S W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS VGS = 0 V, VDS = 15 V, f = 1 MHz CRSS pF pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFD2D8N03P1E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition FET Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Total Gate Charge Gate−to−Drain Charge Gate−to−Source Charge Total Gate Charge QG(TOT) QGD Q1 9.5 Q2 9.3 Q1 2.0 Q2 1.6 Q1 3.7 Q2 3.7 Q1: VGS = 10 V, VDS = 15 V; ID = 18 A Q1 20.8 Q2: VGS = 10 V, VDS = 15 V; ID = 18 A Q2 20.5 Q1 13 Q2 13.3 Q1 5.5 Q2 5.8 Q1 18.9 Q2 19 Q1 5.5 Q2 5.5 Q1 8.4 Q2 8.7 Q1 2 Q2 2 Q1 26.3 Q2 26.3 Q1 3.8 Q2 3.6 Q1 0.8 Q1: VGS = 4.5 V, VDS = 15 V; ID = 18 A Q2: VGS = 4.5 V, VDS = 15 V; ID = 18 A QGS QG(TOT) nC nC nC nC SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V Q1: ID = 18 A, VDD = 15 V, RG = 6 W Q2: ID = 18 A, VDD = 15 V, RG = 6 W tf ns ns ns ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V Q1: ID = 18 A, VDD = 15 V, RG = 6 W Q2: ID = 18 A, VDD = 15 V, RG = 6 W tf ns ns ns ns DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD TJ = 25°C VGS = 0 V, IS = 18 A TJ = 125°C TJ = 25°C VGS = 0 V, IS = 18 A Reverse Recovery Time Reverse Recovery Charge QRR 0.67 Q2 TJ = 125°C tRR VGS = 0 V, VDD = 15 V Q1: IS = 18 A, dIS/dt = 100 A/ms Q2: IS = 18 A, dIS/dt = 100 A/ms 1.2 0.8 1.2 V 0.66 Q1 30 Q2 29 Q1 13 Q2 12.5 ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q1 80 70 VGS = 10 V to 3.6 V 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 70 50 2.8 V 40 30 2.6 V 20 60 50 40 20 10 0 0 0 1 2 3 5 7 6 5 4 3 2 3 5 4 6 7 8 9 10 VGS, GATE VOLTAGE (V) 5 TJ = 25°C 4 3 VGS = 4.5 V VGS = 10 V 2 1 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 100K VGS = 10 V ID = 18 A 10K TJ = 150°C 1.4 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 3 Figure 2. Transfer Characteristics 8 1.2 1.0 0.8 1K TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0.6 0.4 −50 TJ = −55°C 2 Figure 1. On−Region Characteristics 9 1.6 1 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 18 A 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 1 TJ = 25°C 30 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 80 3.2 V −25 0 25 50 75 100 125 150 0.1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q1 VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) 1K COSS 100 CRSS 10 0 100 5 10 15 20 25 30 t, TIME (ns) 8 7 6 5 4 QGD QGS 3 2 1 0 2 0 6 4 8 10 12 14 16 18 20 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 VGS = 4.5 V VDS = 15 V ID = 18 A td(off) 10 td(on) tf tr 1 VDS = 15 V ID = 18 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 VGS = 0 V 10 1 TJ = 125°C 0.1 100 22 TJ = −55°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 0.9 0.8 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 100 ms 100 10 1 ms 1 10 ms 100 ms 1s 10 s DC RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1000 TC = 25°C Single Pulse VGS ≤ 10 V 0.01 0.1 1 10 25°C 10 100°C 125°C 1 0.000001 0.00001 0.0001 100 0.001 0.01 0.1 VDS, DRAIN−SOURCE VOLTAGE(V) TAV, TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 5 1 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q1 RqJA(t) (°C/W) 1000 100 50% Duty Cycle 20% 10% 10 5% 2% 1 1% 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 6 1 10 100 1000 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q2 80 70 VGS = 10 V to 3.6 V 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 70 2.8 V 50 40 30 2.6 V 20 60 50 40 20 10 0 0 0 1 2 3 5 7 6 5 4 3 2 3 4 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 5 TJ = 25°C 4 3 VGS = 4.5 V VGS = 10 V 2 1 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 16. On−Resistance vs. Gate−to−Source Voltage Figure 17. On−Resistance vs. Drain Current and Gate Voltage 1.8 100K VGS = 10 V ID = 18 A 10K TJ = 150°C 1.4 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 3 Figure 15. Transfer Characteristics 8 1.2 1.0 0.8 1K TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 0.6 0.4 −50 TJ = −55°C 2 Figure 14. On−Region Characteristics 9 1.6 1 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 18 A 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 1 TJ = 25°C 30 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 80 3.2 V −25 0 25 50 75 100 125 150 0.1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 18. On−Resistance Variation with Temperature Figure 19. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 7 30 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q2 VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) 1K COSS 100 CRSS 10 0 100 5 10 15 20 25 30 t, TIME (ns) 8 7 6 5 4 QGD QGS 3 2 1 0 2 0 6 4 10 8 14 12 18 16 20 QG, TOTAL GATE CHARGE (nC) Figure 20. Capacitance Variation Figure 21. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 VGS = 4.5 V VDS = 15 V ID = 18 A td(off) 10 td(on) tf tr 1 VDS = 15 V ID = 18 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 VGS = 0 V 10 1 TJ = 125°C 0.1 100 22 TJ = −55°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 22. Resistive Switching Time Variation vs. Gate Resistance Figure 23. Diode Forward Voltage vs. Current 100 100 100 ms 10 1 ms 1 10 ms 100 ms 1s 10 s DC RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1000 TC = 25°C Single Pulse VGS ≤ 10 V 0.01 0.1 1 10 100°C 125°C 1 100 25°C 10 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−SOURCE VOLTAGE(V) TAV, TIME IN AVALANCHE (s) Figure 24. Safe Operating Area Figure 25. IPEAK vs. Time in Avalanche www.onsemi.com 8 1 NTTFD2D8N03P1E TYPICAL CHARACTERISTICS − Q2 RqJA(t) (°C/W) 1000 100 50% Duty Cycle 20% 10% 10 5% 2% 1 1% 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE TIME (sec) Figure 26. Thermal Characteristics POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 9 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN12 3.3X3.3, 0.65P CASE 510CJ ISSUE A DATE 08 AUG 2022 GENERIC MARKING DIAGRAM* XXXX AYWW G XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13806G WQFN12 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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