NTTFS015N04C
MOSFET – Power, Single,
N-Channel
40 V, 17.3 mW, 27 A
Features
•
•
•
•
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Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
±20
V
ID
27
A
TC = 100°C
TC = 25°C
Steady
State
PD
W
23
ID
PD
N−Channel
D (5 − 8)
G (4)
S (1, 2, 3)
MARKING DIAGRAM
1
1.5
A
TJ, Tstg
−55 to
+175
°C
IS
19
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 1.4 A)
EAS
43
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
27 A
W
2.9
93
Source Current (Body Diode)
17.3 mW @ 10 V
6.7
IDM
Operating Junction and Storage Temperature
Range
40 V
A
9.4
TA = 100°C
TA = 25°C, tp = 10 ms
ID MAX
7.4
TA = 100°C
TA = 25°C
RDS(on) MAX
15
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Symbol
V(BR)DSS
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
6.4
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
51.5
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
15NC
AYWWG
G
D
D
D
D
15NC = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
June, 2019 − Rev. 0
1
Publication Order Number:
NTTFS015N04C/D
NTTFS015N04C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 20 mA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 7.5 A
14.4
gFS
VDS = 15 V, ID = 7.5 A
2
S
325
pF
ON CHARACTERISTICS (Note 5)
Forward Transconductance
2.5
3.5
V
17.3
mW
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
165
10
nC
1.3
VGS = 10 V, VDS = 20 V, ID = 7.5 A
2.0
1.2
VGS = 10 V, VDS = 20 V, ID = 7.5 A
6.3
nC
7
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 10 V, VDS = 20 V,
ID = 7.5 A
tf
13
14
4.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 7.5 A
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
18
Charge Time
ta
7
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 7.5 A
QRR
1.2
V
ns
11
6
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS015N04C
TYPICAL CHARACTERISTICS
30
6V
ID, DRAIN CURRENT (A)
25
20
15
10
5V
5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VGS = 7 V to 10 V
0
2
1
20
15
10
TJ = 25°C
5
0
3
3
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
25
20
15
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
20
TJ = 25°C
18
16
VGS = 10 V
14
12
10
8
6
4
10
5
15
25
20
30
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
2.0
VGS = 10 V
ID = 7.5 A
TJ = 175°C
10K
1.6
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
5
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 7.5 A
1.8
TJ = −55°C
Figure 1. On−Region Characteristics
30
10
25
TJ = 125°C
4V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
30
1.4
1.2
1.0
0.8
TJ = 150°C
1K
TJ = 125°C
100
TJ = 85°C
10
TJ = 25°C
1
0.6
0.4
−50 −25
0
25
50
75
100
125
150 175
0.1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTTFS015N04C
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
1K
CISS
COSS
100
10
1
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
0
30
20
40
QGD
5
4
3
VDS = 20 V
TJ = 25°C
ID = 7.5 A
2
1
0
2
1
0
3
tr
tf
6
5
7
1
6
5
4
3
TJ = 125°C
2
1
100
10
VGS = 0 V
7
TJ = 25°C TJ = −55°C
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TC = 25°C
Single Pulse
VGS ≤ 10 V
10 ms
10
TJ(initial) = 25°C
IPEAK (A)
10
1
0.1
4
8
IS, SOURCE CURRENT (A)
t, TIME (ns)
QGS
6
Figure 8. Gate−to−Source vs. Total Charge
10 t
d(on)
ID, DRAIN CURRENT (A)
7
Figure 7. Capacitance Variation
td(off)
100
8
QG, TOTAL GATE CHARGE (nC)
VGS = 10 V
VDS = 20 V
ID = 7.5 A
1000
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
10
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
1
0.5 ms
1 ms
10 ms
DC
TJ(initial) = 100°C
100
0.1
1000
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTTFS015N04C
100
50% Duty Cycle
RqJA(t) (°C/W)
10
1
0.1
0.01
20%
10%
5%
2%
1%
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NTTFS015N04CTAG
Marking
Package
Shipping†
15NC
WDFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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