NTTFS022N15MC

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Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench) 150 V, 22 mW, 37.2 A NTTFS022N15MC www.onsemi.com Features • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 150 V 22 mW @ 10 V 37.2 A N−CHANNEL MOSFET Typical Applications • • • • Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive Capable of 175°C Tj Max Rating MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Parameter VDSS 150 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note 5) TC = 25°C ID 37.2 A Power Dissipation RqJC (Note 5) TC = 25°C PD 71.4 W TA = 25°C ID 7.4 A Power Dissipation (Notes 1, 5) TA = 25°C PD 2.8 W Power Dissipation (Notes 2, 5) TA = 25°C PD 1.2 W Pulsed Drain Current (Note 3) TC = 25°C IDM 158 A TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 8 A) (Note 4) EAS 96 mJ Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Continuous Drain Current (Notes 1, 5) Steady State Operating Junction and Storage Temperature Range D 5 4 G D 6 3 S D 7 2 S D 8 1 S WDFN8 CASE 483AW MARKING DIAGRAM 22MC &Z&3&K 22MC = Specific Device Code &Z = Assembly Location &3 = 3−Digit Date Code &K = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping† 1. Surface mounted on a FR−4 board using 1 in2 pad of 2 oz copper. 2. Surface mounted on a FR−4 board using the minimum recommended pad of NTTFS022N15MC WDFN8 3000 / Tape & 2 oz copper. (Pb−Free) Reel 3. Pulsed ID please refer to Figure 12 SOA graph for more details 4. EAS of 96 mJ is based on starting TJ = 25°C; L = 3 mH, IAS = 8 A, †For information on tape and reel specifications, VDD = 150 V, VGS = 10 V. including part orientation and tape sizes, please 5. The entire application environment impacts the thermal resistance values shown, refer to our Tape and Reel Packaging Specification they are not constants and are only valid for the particular conditions noted. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2018 October, 2020 − Rev. 0 1 Publication Order Number: NTTFS022N15MC/D NTTFS022N15MC THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance Junction−to−Case − Steady State (Note 5) Parameter RqJC 2.1 °C/W Thermal Resistance Junction−to−Ambient − Steady State (Notes 1, 5) RqJA 53 °C/W Thermal Resistance Junction−to−Ambient − Steady State (Notes 2, 5) RqJA 125 °C/W Typ Max Unit ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 150 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, referenced to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 120 V, TJ = 25°C 1 mA Gate−to−Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(TH) VGS = VDS, ID = 100 mA 4.5 V VGS(TH)/TJ ID = 100 mA, referenced to 25°C −8.4 RDS(on) VGS = 10 V, ID = 18 A 17.1 22 mW VGS = 8 V, ID = 9 A 19 25.3 mW gFS VDS = 10 V, ID = 18 A 37 S 1315 pF Parameter OFF CHARACTERISTICS V 75 mV/°C ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance 2.5 mV/°C CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1 MHz VDS = 75 V 380 6 Gate−Resistance RG 0.6 Total Gate Charge QG(TOT) 17 Threshold Gate Charge QG(TH) 4.4 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.7 Plateau Voltage VGP 5.6 V Output Charge QOSS 41 nC 14 ns VGS = 10 V, VDS = 75 V, ID = 18 A VGS = 0 V, VDD = 75 V 1.2 W nC 7.2 RESISTIVE SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 10 V, VDS = 75 V, ID = 18 A, RG = 6 W tf 2.8 17 2.9 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 18 A, TJ = 25°C 0.86 VGS = 0 V, VDD = 75 V dIS/dt = 300 A/ms, IS = 18 A 45 ns 155 nC 28 ns 242 nC VGS = 0 V, VDD = 75 V dIS/dt = 1000 A/ms, IS = 18 A 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Switching characteristics are independent of operating junction temperature www.onsemi.com 2 NTTFS022N15MC TYPICAL CHARACTERISTICS 8.0 V 6 7.0 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 10 V 75 60 45 6.0 V 30 VGS = 5.5 V 15 RDS(on), NORMALIZED DRAIN−TO−SOURCE ON−RESISTANCE 0 0 2 6 4 4 VGS = 6.0 V 3 7.0 V 2 8.0 V 1 10 V 0 15 30 75 60 45 90 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 120 ID = 18 A VGS = 10 V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −75 −50 −25 0 25 50 75 ID = 18 A 80 60 TJ = 150°C 30 TJ = 25°C 0 100 125 150 175 5 10 Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) 75 60 45 TJ = 25°C TJ = 150°C 3 9 Figure 3. Normalized On−Resistance vs. Junction Temperature 100 15 8 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS = 10 V 30 6 TJ, JUNCTION TEMPERATURE (°C) 90 ID, DRAIN CURRENT (A) Pulse Duration = 250 ms Duty Cycle = 0.5% Max VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.4 0 5.5 V 5 0 10 8 RDS(on), ON−RESISTANCE (mW) ID, DRAIN CURRENT (A) 90 4 TJ = −55°C 5 6 10 1 0.1 0.01 0.001 7 8 9 VGS = 0 V TJ = 175°C TJ = −55°C TJ = 25°C 0 0.2 0.4 0.6 0.8 1.0 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 NTTFS022N15MC 10 10K ID = 18 A VDD = 25 V VDD = 75 V 8 6 CISS CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 50 V 4 2 5 10 0.1 10 100 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source Voltage 100K PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 1 Qg, GATE CHARGE (nC) 35 VGS = 10 V 30 VGS = 8 V 25 20 15 10 RqJC = 2.1°C/W 25 50 100 75 125 10K 1K 100 10 175 150 0.00001 0.0001 0.001 0.01 t, PULSE WIDTH (s) Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power ID, DRAIN CURRENT (A) 200 100 Starting TJ = 25°C 10 Starting TJ = 100°C Starting TJ = 150°C 0.001 0.01 0.1 1 10 10 1 100 ms 10 ms 100 ms/DC Single Pulse RqJC = 2.1°C/W TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 100 This area is limited by RDS(on) 1 ms 10 ms 1 0.1 TC, CASE TEMPERATURE (°C) 30 IAS, AVALANCHE CURRENT (A) CRSS 10 20 15 40 1 100 1 0 0 COSS f = 1 MHz VGS = 0 V 0 5 1K 0.1 tAV, TIME IN AVALANCHE (mS) 1 10 100 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Unclamped Inductive Switching Capability Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 NTTFS022N15MC TYPICAL CHARACTERISTICS ZqJC, EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 0.1 2% 1% Single Pulse Notes: R q JC = 2.15C/W Peak TJ = P DM x Z q JC (t) + TC Duty Cycle, D = t1 / t 2 0.01 0.001 0.00001 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Impedance POWERTRENCH is a registered trademark on Semiconductor Components Industries, LLC. www.onsemi.com 5 0.1 1 NTTFS022N15MC PACKAGE DIMENSIONS WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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