NTTFS1D8N02P1E

MOSFET - Power, Single N-Channel, Power33 25 V, 1.3 mW, 150 A NTTFS1D8N02P1E Features • • • • Small Footprint for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 1.3 mW @ 10 V 25 V Typical Applications NMOS D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage VGS +16, −12 V ID 150 A Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 3) Power Dissipation RqJA (Notes 1, 3) Continuous Drain Current RqJA (Notes 2, 3) Power Dissipation RqJA (Notes 2, 3) Pulsed Drain Current TC = 25°C Steady State Steady State Steady State TC = 85°C PD 46 TA = 25°C ID 36 TA = 85°C W 2.7 W TA = 25°C ID 20 A TA = 85°C 14 PD 0.8 MARKING DIAGRAM 1 W IDM 508 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 48.3 A, L = 0.1 mH) (Note 4) EAS 117 mJ Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz Cu pad. 2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro− mechanical application board design. RqCA is determined by the user’s board design. 4. 100% UIS tested at L = 0.1 mH, IAV = 32 A. May, 2020 − Rev. 1 Pin 1 26 PD © Semiconductor Components Industries, LLC, 2019 S (1, 2, 3) A TA = 25°C TA = 25°C, tp = 10 ms G (4) 108 TC = 25°C TA = 25°C 150 A 1.8 mW @ 4.5 V • DC−DC Converters • Power Load Switch • Notebook Battery Management Parameter ID MAX 1 PQFN8 (Power33) CASE 483AW 2EMN A Y WW ZZ 2EMN AYWWZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code PIN CONNECTIONS S D S D S G D D (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: NTTFS1D8N02P1E/D NTTFS1D8N02P1E THERMAL RESISTANCE RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 1) Parameter RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 47 Junction−to−Ambient − Steady State (Note 2) RqJA 152 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 25 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 1 mA, ref to 25°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 20 V V 16 mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = +16 V, −12 V VGS(TH) VGS = VDS, ID = 660 mA VGS(TH)/TJ ID = 660 mA, ref to 25°C ±100 mA ±nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) 1.2 2.0 −4.4 V mV/°C VGS = 10 V ID = 17 A 1.05 1.3 VGS = 4.5 V ID = 13 A 1.3 1.8 mW Forward Transconductance gFS VDS = 5 V, ID = 17 A 118 S Gate Resistance RG TA = 25°C 0.6 W CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Capacitance CRSS 41 Total Gate Charge QG(TOT) 17.1 Threshold Gate Charge QG(TH) Gate−to−Drain Charge QGD Gate−to−Source Charge QGS Total Gate Charge 2980 VGS = 0 V, VDS = 13 V, f = 1 MHz VGS = 4.5 V, VDS = 13 V; ID = 17 A 805 pF 4 2.7 nC 7 QG(TOT) VGS = 10 V, VDS = 13 V; ID = 17 A 39 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time 21.3 VGS = 4.5 V, VDD = 13 V, ID = 17 A, RG = 6 W tf 8 ns 30 7 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time td(ON) Rise Time Turn−Off Delay Time tr td(OFF) Fall Time 13 VGS = 10 V, VDD = 13 V, ID = 17 A, RG = 6 W tf 2.8 ns 44 5.4 SOURCE−TO−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 17 A TJ = 25°C 0.77 TJ = 125°C 0.61 VGS = 0 V, dI/dt = 100 A/ms, IS = 17 A 1.2 V 34 ns 22 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTTFS1D8N02P1E TYPICAL CHARACTERISTICS 160 2.8 V 120 140 ID, DRAIN CURRENT (A) VGS = 10 V to 3.6 V 100 80 2.6 V 60 40 120 100 80 40 20 0 0 0 1 2 3 7 6 5 4 3 2 4 3 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 5 TJ = 25°C 2.5 2.0 1.5 VGS = 4.5 V VGS = 10 V 1.0 0.5 0 10 30 50 70 110 90 130 150 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 100K VGS = 10 V ID = 17 A TJ = 150°C 10K 1.4 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 3 Figure 2. Transfer Characteristics 8 1.2 1.0 0.8 0.6 0.4 −50 TJ = −55°C 2 Figure 1. On−Region Characteristics 9 1.6 1 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 17 A 2 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 1 TJ = 25°C 60 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 140 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 160 3.2 V TJ = 125°C 1K TJ = 85°C 100 10 TJ = 25°C 1 0.1 0.01 −25 0 25 50 75 100 125 150 0.001 5 7 9 11 13 15 17 19 21 23 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 25 NTTFS1D8N02P1E TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS COSS C, CAPACITANCE (pF) 1K 100 CRSS 10 0 1000 5 10 20 15 25 t, TIME (ns) 7 6 5 4 QGD QGS 3 2 1 0 5 0 10 15 20 30 25 35 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 100 td(off) td(on) tr tf 1 8 QG, TOTAL GATE CHARGE (nC) VGS = 4.5 V VDS = 13 V ID = 17 A 10 VDS = 13 V ID = 17 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 VGS = 0 V 10 1 0.1 100 40 TJ = 125°C TJ = 25°C 0.3 0.4 0.5 TJ = −55°C 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (A) IPEAK, DRAIN CURRENT (A) 100 TA = 25°C 1000 Single Pulse RqJA = 152°C/W 10 ms 100 100 ms 10 1 ms 10 ms 100 ms 1s 10 s DC 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.01 0.1 1 10 TJ(initial) = 25°C 10 TJ(initial) = 100°C TJ(initial) = 125°C 1 100 0.00001 0.0001 0.001 0.01 0.1 1 VDS, DRAIN−SOURCE VOLTAGE(V) TAV, TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10 NTTFS1D8N02P1E TYPICAL CHARACTERISTICS 1000 RqJA(t) (°C/W) 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 0.001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics ORDERING INFORMATION Device NTTFS1D8N02P1E Marking Package Shipping† 2EMN Power33 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A GENERIC MARKING DIAGRAM* XXXX A Y WW XXXX AYWW DOCUMENT NUMBER: DESCRIPTION: = Specific Device Code = Assembly Location = Year = Work Week 98AON13672G WDFN8 3.3X3.3, 0.65P DATE 10 SEP 2019 *This information is generic. Please refer to device data sheet for actual part marking. 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