NTTFS4928NTWG

NTTFS4928N MOSFET – Power, Single, N-Channel, m8FL 30 V, 37 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 9.0 mW @ 10 V 30 V 37 A 13.5 mW @ 4.5 V Applications • • • • DC−DC Converters Power Load Switch Notebook Battery Management Motor Control N−Channel MOSFET D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 11.8 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.12 Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.9 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 85°C W A 11.5 TA = 25°C PD 3.86 W TA = 25°C ID 7.3 A TA = 85°C 5.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.81 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 37 A Power Dissipation RqJC (Note 1) TC = 25°C PD 20.8 W TA = 25°C, tp = 10 ms IDM 160 A TJ, Tstg −55 to +150 °C Pulsed Drain Current TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt © Semiconductor Components Industries, LLC, 2012 June, 2019 − Rev. 2 S (1,2,3) MARKING DIAGRAM 8.5 TA = 85°C Steady State G (4) 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4928 A Y WW G 4928 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION 27 IS 20 A dV/dt 6.0 V/ns 1 Device Package Shipping† NTTFS4928NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS4928NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS4928N/D NTTFS4928N MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 20 Apk, L = 0.1 mH, RG = 25 W) EAS 20 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 6 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 59.1 Junction−to−Ambient – Steady State (Note 4) RqJA 154.5 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 32.4 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 24 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.6 3.7 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 5.4 ID = 10 A 5.3 ID = 20 A 8.9 ID = 10 A 8.5 VDS = 1.5 V, ID = 15 A mV/°C 9.0 mW 13.5 40 S 913 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 108 Total Gate Charge QG(TOT) 8.0 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 366 1.6 3.1 3.1 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 nC NTTFS4928N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition QG(TOT) VGS = 10 V, VDS = 15 V, ID = 20 A Min Typ Max Unit CHARGES AND CAPACITANCES Total Gate Charge 16 nC 9.2 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 25.5 14 tf 4.4 td(on) 6.5 tr td(off) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf ns 21 18 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 125°C 0.76 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 21.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 1.1 V ns 10.5 10.9 QRR 8.4 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.054 1.3 0.9 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 W NTTFS4928N TYPICAL CHARACTERISTICS 4.5 V TJ = 25°C ID, DRAIN CURRENT (A) 80 4.0 V 60 3.5 V 50 40 3.0 V 30 20 VGS = 2.5 V 0 1 2 3 4 30 20 1 2 3 4 5 0.011 0.010 0.009 0.008 0.007 0.006 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.012 0.019 T = 25°C 0.017 0.015 0.013 VGS = 4.5 V 0.011 0.009 0.007 VGS = 10 V 0.005 0.003 10 20 30 50 40 60 70 80 90 100 VGS (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.7 ID = 20 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 50 40 Figure 1. On−Region Characteristics 0.013 1.5 TJ = 125°C VDS = 10 V 60 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 20 A 1.6 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.014 3 80 70 10 0 5 0.015 0.005 0.004 TJ = −55°C 90 70 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 100 10 V 90 ID, DRAIN CURRENT (A) 100 1.4 1.3 1.2 1.1 1.0 0.9 TJ = 125°C 1,000 100 TJ = 85°C 0.8 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 VGS = 0 V 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4928N TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V Ciss 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) 1200 800 600 Coss 400 Crss 200 0 0 5 10 15 20 25 30 7 6 5 Qgd Qgs 4 TJ = 25°C 3 VGS = 10 V VDD = 15 V ID = 20 A 2 1 0 0 2 4 6 8 10 12 14 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS = 10 V VDD = 15 V ID = 15 A IS, SOURCE CURRENT (A) t, TIME (ns) 8 Qg, TOTAL GATE CHARGE (nC) td(off) tf tr td(on) 10 1 10 16 VGS = 0 V 25 TJ = 25°C 20 15 10 5 0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0 V < VGS < 20 V Single Pulse TC = 25°C 10 ms 100 ms 10 1 ms 10 ms 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (A) QT 9 30 100 100 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 11 100 22 ID = 20 A 20 18 16 14 12 10 8 6 4 2 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 1.0 15 NTTFS4928N TYPICAL CHARACTERISTICS 100 D = 0.5 r(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative