NTTFS4C08N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 52 A
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
5.9 mW @ 10 V
30 V
52 A
9.0 mW @ 4.5 V
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
15
A
TA = 85°C
S (1,2,3)
10.8
PD
2.13
MARKING DIAGRAM
W
1
ID
TA = 85°C
Steady
State
A
21
15
TA = 25°C
PD
4.2
W
TA = 25°C
ID
9.3
A
TA = 85°C
6.7
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.82
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
52
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
G (4)
TC = 85°C
PD
25.5
W
144
A
TJ,
Tstg
−55 to
+150
°C
IS
23
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH,
RG = 25 W) (Note 3)
EAS
42
mJ
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4C08
A
Y
WW
G
4C08
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
37.5
IDM
TA = 25°C, tp = 10 ms
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C08NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2015
June, 2019 − Rev. 3
1
Publication Order Number:
NTTFS4C08N/D
NTTFS4C08N
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction−to−Case (Drain)
RqJC
4.9
Junction−to−Ambient – Steady State (Note 4)
RqJA
58.8
Junction−to−Ambient – Steady State (Note 5)
RqJA
153
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
30
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
13.8
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
5.0
mV/°C
VGS = 10 V
ID = 30 A
4.7
5.9
VGS = 4.5 V
ID = 18 A
7.2
9.0
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
42
0.3
1.0
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1113
VGS = 0 V, f = 1 MHz, VDS = 15 V
702
pF
39
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
8.4
15
Threshold Gate Charge
QG(TH)
1.8
3.5
Gate−to−Source Charge
QGS
3.5
7.0
Gate−to−Drain Charge
QGD
3.3
6.0
Gate Plateau Voltage
VGP
3.4
7.0
V
18.2
35
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
0.035
nC
NTTFS4C08N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
9.0
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
33
tf
4.0
td(ON)
7.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
15
26
ns
19
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.79
TJ = 125°C
0.66
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
28.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
14.5
13.8
15.3
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTTFS4C08N
TYPICAL CHARACTERISTICS
5.5 V −
10 V
ID, DRAIN CURRENT (A)
80
3.8 V
70
60
3.6 V
50
3.4 V
40
3.2 V
30
3.0 V
20
0
2.8 V
60
50
40
30
0.5
1
1.5
2
2.5
TJ = 25°C
10
0
3
0
2
2.5
3
3.5
4
4.5
Figure 2. Transfer Characteristics
ID = 30 A
0.014
0.012
0.010
0.008
0.006
0.004
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
5
0.010
TJ = 25°C
0.009
0.008
VGS = 4.5 V
0.007
0.006
VGS = 10 V
0.005
0.004
0.003
0.002
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.7
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
Figure 1. On−Region Characteristics
0.016
1.5
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.018
1.6
0.5
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
0.002
3.0
TJ = 125°C
20
TJ = 25°C
0
VDS = 3 V
70
4V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
80
4.2 V
4.5 V
ID, DRAIN CURRENT (A)
90
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
1.4
1.3
1.2
1.1
1
0.9
TJ = 150°C
TJ = 125°C
1000
TJ = 85°C
100
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4C08N
1800
VGS = 0 V
TJ = 25°C
1600
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
1400
Ciss
1200
1000
Coss
800
600
400
200
0
Crss
0
5
10
15
20
25
30
0
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
Qgs
2
0
2
4
6
8
10
12
14
16
18
20
20
tr
td(off)
10
VGS = 0 V
18
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(on)
tf
16
14
12
10
8
6
TJ = 125°C
4
TJ = 25°C
2
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10
100 ms
1 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01
0.1
10 ms
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
4
Figure 7. Capacitance Variation
100
0.1
6
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
QT
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
100
22
ID = 20 A
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
1.0
15
NTTFS4C08N
TYPICAL CHARACTERISTICS
1000
R(t) (°C/W)
100 Duty Cycle = 50%
20%
10
10%
5%
2%
1 1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
80
ID, DRAIN CURRENT (A)
70
60
GFS (S)
50
40
30
20
TA = 25°C
TA = 85°C
10
10
0
0
5
1
1.0E−08
10 15 20 25 30 35 40 45 50 55 60 65 70
1.0E−07
1.0E−06
1.0E−05
1.0E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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