NTTFS4C65NTAG

NTTFS4C25N Power MOSFET 30 V, 27 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management 17 mW @ 10 V 30 V Symbol N−Channel MOSFET Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 7.7 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 1.63 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 12.2 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 4.1 W TA = 25°C ID 5.0 A Continuous Drain Current RqJA (Note 2) TA = 85°C 5.8 TA = 85°C Steady State TA = 25°C PD 0.69 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 27 A Power Dissipation RqJC (Note 1) TC = 25°C PD 20.2 TA = 25°C, tp = 10 ms IDM 81 A TJ, Tstg −55 to +150 °C IS 17 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 16 Apk, L = 0.1 mH, RG = 25 W) (Note 3) EAS 13 mJ TL 260 °C TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 20 W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 11 Apk, EAS = 6 mJ. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 0 G (4) S (1,2,3) MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4C25 AYWWG G D D D D 3.8 Power Dissipation RqJA (Note 2) Pulsed Drain Current D (5−8) 9.1 TA = 85°C 27 A 26.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter ID MAX 1 4C25 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTTFS4C25NTAG WDFN8 (Pb−Free) 1500 / Tape & Reel NTTFS4C25NTWG WDFN8 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS4C25N/D NTTFS4C25N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 6.2 Junction−to−Ambient – Steady State (Note 4) RqJA 76.7 Junction−to−Ambient – Steady State (Note 5) RqJA 210 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 30.8 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 4.4 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 15.3 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 4.5 mV/°C VGS = 10 V ID = 10 A 13 17 VGS = 4.5 V ID = 9 A 21 26.5 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 23 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 500 VGS = 0 V, f = 1 MHz, VDS = 15 V 295 pF 85 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 5.1 Threshold Gate Charge QG(TH) 0.9 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.7 Gate Plateau Voltage VGP 3.3 V 10.3 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 20 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 20 A 0.170 1.7 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 8.0 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W tf 32 10 3.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTTFS4C25N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 4.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25 ns 13 2.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 125°C 0.75 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.2 V 18.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 9.8 8.4 5.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NTTFS4C25N TYPICAL CHARACTERISTICS 40 40 4.5 V to 10 V 3.8 V 25 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.0 V 30 TJ = 25°C 0 1 2 3 0 0.012 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 0.045 1.5 2.0 2.5 3.0 3.5 4.0 TJ = 25°C 0.025 0.015 0.005 VGS = 10 V 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C 1.4 1.3 1.2 1.1 1.0 0.9 −25 4.5 5.0 VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 0.035 Figure 3. On−Resistance vs. VGS 0.8 0.7 −50 0.5 Figure 2. Transfer Characteristics 0.022 1.5 0 Figure 1. On−Region Characteristics 0.032 1.6 TJ = −55°C VGS, GATE−TO−SOURCE VOLTAGE (V) 0.042 1.7 TJ = 125°C 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 30 A 3.0 20 TJ = 25°C 5 4 0.052 0.002 30 2.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 35 0 VDS = 5 V 4.2 V 0 25 50 75 100 125 150 1000 TJ = 125°C 100 TJ = 85°C 10 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4C25N 800 VGS = 0 V TJ = 25°C 700 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Ciss 600 500 Coss 400 300 200 Crss 100 0 0 5 10 15 20 25 30 10 QT 8 6 TJ = 25°C VDD = 15 V VGS = 10 V ID = 30 A 2 0 0 2 12 20 IS, SOURCE CURRENT (A) tr 10 td(on) td(off) 1 VDD = 15 V ID = 15 A VGS = 10 V VGS = 0 V 16 14 12 10 8 TJ = 25°C TJ = 125°C 6 4 2 1 10 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 10 ms 100 ms 1 ms 10 ms 1 0 V < VGS < 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 10 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 ID, DRAIN CURRENT (A) 8 Figure 7. Capacitance Variation tf 0.01 6 Qg, TOTAL GATE CHARGE (nC) 18 0.1 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 0.1 Qgd Qgs 4 100 6 ID = 11 A 5 4 3 2 1 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4C25N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% R(t) (°C/W) 20% 10 10% 5% 2% 1 1% Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response 100 30 ID, DRAIN CURRENT (A) 25 GFS (S) 20 15 10 5 0 0 5 10 15 20 25 30 35 TA = 85°C 10 1 1.E−08 40 1.E−07 1.E−06 TA = 25°C 1.E−05 1.E−04 1.E−03 ID (A) PULSE WIDTH (SECONDS) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 NTTFS4C25N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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