NTTFS4H07NTAG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTTFS4H07N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 66 A Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load www.onsemi.com VGS MAX RDS(on) TYP QGTOT 4.5 V 7.1 mW 5.7 nC 10 V 4.8 mW 12.4 nC PIN CONNECTIONS m8−FL (3.3 x 3.3 mm) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 18.5 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 2.64 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 66 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 33.8 W Pulsed Drain Current (tp = 10 ms) IDM 216 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 32 Apk, L = 0.1 mH) (Note 3) EAS 51 mJ Drain to Source dV/dt dV/dt 7 V/ns TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) TSLD 260 °C Maximum Junction Temperature (Top View) (Bottom View) N−CHANNEL MOSFET D (5−8) G (4) S (1,2,3) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 21 A, EAS = 22 mJ. © Semiconductor Components Industries, LLC, 2015 June, 2019 − Rev. 3 1 Publication Order Number: NTTFS4H07N/D NTTFS4H07N THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 47.3 3.7 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. www.onsemi.com 2 NTTFS4H07N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 15.5 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.1 2.1 3.7 VGS = 10 V ID = 30 A 3.8 4.8 VGS = 4.5 V ID = 15 A 5.8 7.1 gFS VDS = 12 V, ID = 15 A V mV/°C 49 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 34 Total Gate Charge QG(TOT) 5.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance 771 VGS = 0 V, f = 1 MHz, VDS = 12 V VGS = 4.5 V, VDS = 12 V; ID = 30 A pF 525 2.9 nC 2.5 1.26 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 12.4 RG TA = 25°C 1.0 nC 2 W SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 7.6 VGS = 4.5 V, VDS = 12 V, ID = 15 A, RG = 3.0 W 32 ns 11.7 tf 2.13 td(ON) 5 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 12 V, ID = 15 A, RG = 3.0 W tf 28.3 ns 14.5 1.65 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.78 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 23.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 11.6 ns 11.8 8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTTFS4H07N TYPICAL CHARACTERISTICS 70 3.8 V VGS = 10 V to 4 V 50 VGS = 3.4 V 40 VGS = 3.2 V 30 VGS = 3.0 V 20 TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 40 TJ = 125°C 30 20 TJ = 25°C 0.005 0.004 4 5 6 7 8 9 VGS (V) 10 2.5 3.0 3.5 4.0 T = 25°C 0.007 VGS = 4.5 V 0.006 0.005 VGS = 10 V 0.004 0.003 0.002 10 30 20 40 60 50 70 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 1E−04 ID = 20 A VGS = 10 V VGS = 0 V TJ = 150°C 1E−05 TJ = 125°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.0 0.008 Figure 3. On−Resistance vs. VGS 1.4 1E−06 1.3 1.2 TJ = 85°C 1E−07 1.1 1E−08 1.0 0.9 0.8 0.7 −50 1.5 Figure 2. Transfer Characteristics 0.006 1.5 1.0 Figure 1. On−Region Characteristics 0.007 1.6 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 3 TJ = −55°C 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.008 0.003 0 3.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 50 10 10 0 VDS = 5 V 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 70 VGS = 3.6 V TJ = 25°C 1E−09 −25 0 25 50 75 100 125 150 1E−10 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 25 NTTFS4H07N TJ = 25°C VGS = 0 V 1200 1000 800 Ciss 600 Coss 400 200 Crss 0 1000 5 10 15 20 ID, DRAIN CURRENT (A) 6 Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 2 4 6 8 10 20 VDD = 15 V ID = 15 A VGS = 10 V VGS = 0 V 18 td(off) tr td(on) 1 14 12 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 16 14 12 TJ = 125°C TJ = 25°C 10 8 6 4 2 0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 50 ms 10 100 ms 1 ms 1 0.01 8 Figure 7. Capacitance Variation 10 0.1 QT Qg, TOTAL GATE CHARGE (nC) tf 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 25 IS, SOURCE CURRENT (A) 0 10 ms 0 V < VGS < 10 V RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 100 22 20 ID = 21 A 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature www.onsemi.com 5 150 NTTFS4H07N TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% R(t) (°C/W) 10 2% 1% 1 PCB Cu Area 650 mm2 PCB Cu thk 1 oz 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 PULSE TIME (sec) Figure 13. Thermal Characteristics 80 1000 ID, DRAIN CURRENT (A) 70 GFS (S) 60 50 40 30 20 100 10 10 0 0 10 20 30 40 50 1 60 0.0000001 0.000001 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics www.onsemi.com 6 NTTFS4H07N ORDERING INFORMATION Package Shipping† NTTFS4H07NTAG WDFN8 (Pb-Free) 1500 / Tape & Reel NTTFS4H07NTWG WDFN8 (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB H07N A Y WW G 1 S S S G H07N AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 7 NTTFS4H07N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X L C 6X 0.10 C DETAIL A SEATING PLANE DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* K E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTTFS4H07N/D