NTTFS5C453NL
Power MOSFET
40 V, 3 mW, 107 A, Single N−Channel
Features
•
•
•
•
Small Footprint (3.3x3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
±20
V
ID
107
A
Steady
State
PD
ID
W
68
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
PD
W
3.3
MARKING
DIAGRAM
1.6
740
A
TJ, Tstg
−55 to
+175
°C
IS
76
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 7 A)
EAS
215
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
107 A
4.8 mW @ 4.5 V
A
23
IDM
Operating Junction and Storage Temperature
3 mW @ 10 V
16
TA = 100°C
TA = 25°C, tp = 10 ms
ID MAX
34
TA = 100°C
TA = 25°C
RDS(ON) MAX
75
TC = 100°C
TA = 25°C
V(BR)DSS
40 V
Symbol
TC = 100°C
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Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
WDFN8
(m8FL)
CASE 511AB
453L
A
Y
WW
G
1
S
S
S
G
453L
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
Parameter
RqJC
2.2
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
46
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
May, 2018 − Rev. 3
1
Publication Order Number:
NTTFS5C453NL/D
NTTFS5C453NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
1.6
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 60 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
1.65
2.0
−5.3
VGS = 10 V
ID = 40 A
2.5
3
VGS = 4.5 V
ID = 40 A
3.8
4.8
gFS
VDS = 15 V, ID = 40 A
V
mV/°C
120
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
2100
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 20 V
31
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 40 A
35
Total Gate Charge
QG(TOT)
16
Threshold Gate Charge
QG(TH)
4.0
Gate−to−Source Charge
QGS
7.0
Gate−to−Drain Charge
QGD
5.0
Plateau Voltage
VGP
3.2
V
Gate Resistance
RG
1.2
W
VGS = 0 V, f = 1 MHz, VDS = 25 V
1000
pF
42
VGS = 4.5 V, VDS = 20 V; ID = 40 A
TA = 25°C
nC
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
11
VGS = 4.5 V, VDS = 20 V,
ID = 40 A, RG = 2.5 W
tf
110
ns
21
5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
1.2
V
41
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 40 A
QRR
19
ns
22
30
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5C453NL
TYPICAL CHARACTERISTICS
300
300
4.0 V
ID, DRAIN CURRENT (A)
250
ID, DRAIN CURRENT (A)
VDS = 5 V
4.5 V to
10 V
3.8 V
200
3.6 V
150
3.4 V
100
3.2 V
50
3.0 V
2.8 V
2.6 V
250
200
150
100
TJ = 25°C
50
0
3
4
5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 40 A
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
6
TJ = 25°C
5
VGS = 4.5 V
4
3
VGS = 10 V
2
1
0
50
100
150
200
250
300
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
1.9
VGS = 10 V
ID = 40 A
IDSS, LEAKAGE (nA)
1.7
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.0
3
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = −55°C
TJ = 125°C
0
0
1.5
1.3
1.1
TJ = 150°C
10000
TJ = 125°C
1000
TJ = 85°C
100
0.9
10
0.7
−50
−25
0
25
50
75
100
125
150
175
5
15
25
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS5C453NL
TYPICAL CHARACTERISTICS
30
C, CAPACITANCE (pF)
10
CISS
1000
COSS
100
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
0
10
20
30
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10000
QT
25
8
20
6
15
QGD
QGS
4
10
VDS = 20 V
TJ = 25°C
ID = 40 A
2
0
0
10
20
5
0
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000.0
td(off)
tf
100.0
t, TIME (ns)
IS, SOURCE CURRENT (A)
tr
td(on)
10.0
VGS = 4.5 V
VDD = 20 V
ID = 40 A
1.0
1
10
10.0
TJ = 25°C
TJ = −55°C
1.0
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
1
0.1
0.01
0.1
IPEAK, (A)
ID, DRAIN CURRENT (A)
TJ = 125°C
500 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
1 ms
TJ = 25°C
10
TJ = 100°C
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
10
1
1E−4
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−2
NTTFS5C453NL
TYPICAL CHARACTERISTICS
100
RqJA (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NTTFS5C453NLTAG
453L
WDFN8
(Pb−Free)
1500 / Tape & Reel
NTTFS5C453NLTWG
453L
WDFN8
(Pb−Free)
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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