NTTFS5D9N08HTWG

MOSFET - Single N-Channel 80 V, 5.9 mW, 84 A NTTFS5D9N08H Features • • • • Max RDS(on) = 5.9 mW at VGS = 10 V, ID = 23 A Max RDS(on) = 9 mW at VGS = 6 V, ID = 12 A High Performance Technology for Extremely Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • www.onsemi.com V(BR)DSS RDS(ON) MAX 5.9 mW @ 10 V 80 V DC−DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Oring FET 9 mW @ 6 V ID MAX 84 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 84 A PD 100 W ID 13 A PD 2.7 W IDM 535 A TJ, Tstg −55 to +175 °C IS 83 A EAS 80 mJ TL 260 °C Parameter Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) TC = 25°C Steady State TA = 25°C Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IAV = 40 A, L = 0.1 mH) (Note 3) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) THERMAL RESISTANCE RATINGS Symbol Value Unit Junction−to−Case − Steady State (Note 1) RqJC 1.5 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 54.8 May, 2020 − Rev. 1 S5D9 AYWWZZ S5D9 A Y WW ZZ = Specific Device Code = Assembly Plant Code = Numeric Year Code = Work Week Code = Assembly Lot Code ORDERING INFORMATION Device 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz. Cu pad. 3. EAS of 80 mJ is based on started TJ = 25°C, IAS = 40 A, VDD = 80 V, VGS = 10 V. 100% test at IAS = 40 A. © Semiconductor Components Industries, LLC, 2018 WDFN8 3.3X3.3, 0.65P CASE 483AW MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter N−CHANNEL MOSFET 1 NTTFS5D9N08HTWG Package Shipping† PQFN8 3000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTTFS5D9N08H/D NTTFS5D9N08H ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 80 V V 42.91 mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V ±100 mA nA ON CHARACTERISTICS (Note 4) VGS(TH) VGS = VDS, ID = 120 mA VGS(TH)/TJ ID = 120 mA, ref to 25°C −6.81 RDS(on) VGS = 10 V, ID = 23 A 4.6 5.9 VGS = 6 V, ID = 12 A 6.6 9.0 Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance 2.0 4.0 V mV/°C mW Forward Transconductance gFS VDS = 15 V, ID = 23 A 135 S Gate−Resistance RG TA = 25°C 1 W Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 40 V 2040 pF Output Capacitance COSS 303 Reverse Transfer Capacitance CRSS 12 CHARGES & CAPACITANCES VGS = 6 V, VDS = 64 V, ID = 11.5 A nC Total Gate Charge QG(TOT) 20 Total Gate Charge QG(TOT) (10V) 31 Gate−to−Source Charge QGS 8.4 Gate−to−Drain Charge QGD 6.8 Plateau Voltage VGP 4.4 V 17.2 ns SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 6 V, VDS = 64 V, ID = 11.5 A, RG = 2.5 W 8.7 td(OFF) 21.6 tf 5.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Charge Time ta Discharge Time tb VGS = 0 V, IS = 23 A TJ = 25°C 0.8 TJ = 125°C 0.7 1.2 V VGS = 0 V, dIS/dt = 100 A/ms, IS = 11.5 A 39 ns 28 nC VGS = 0 V, dIS/dt = 100 A/ms, IS = 11.5 A 21 ns 16 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures 5. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. www.onsemi.com 2 NTTFS5D9N08H TYPICAL CHARACTERISTICS 90 6.0 V 90 5.5 V 80 VGS = 5.0 V 60 50 40 30 4.5 V 20 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 10 V to 7 V 70 0 2 1 3 60 50 40 TJ = 25°C 30 20 TJ = 150°C 0 43 38 33 28 23 18 13 6 7 8 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 72 84 VGS, GATE−TO−SOURCE VOLTAGE (V) 14 TJ = 25°C 13 12 11 10 9 8 VGS = 6 V 7 6 VGS = 10 V 5 4 3 0 12 24 48 36 60 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100K VGS = 10 V ID = 23 A IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 5 Figure 2. Transfer Characteristics TJ = 25°C ID = 23 A 2.2 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 48 2.4 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 53 2.6 2 1 TJ = −55°C Figure 1. On−Region Characteristics 58 8 3 70 0 5 4 VDS = 5 V 10 4.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 80 2.0 1.8 1.6 1.4 1.2 1.0 TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 0.8 VGS = 0 V 0.6 −50 −25 0 25 50 75 100 125 150 175 100 0 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 80 NTTFS5D9N08H TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) 1K COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 0 20 30 40 50 60 70 6 QGS 5 4 3 TJ = 25°C ID = 11.5 A VDS = 64 V 2 1 0 0 6 3 9 12 15 18 21 24 27 30 33 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (A) td(off) td(on) tr 10 QGD QG, TOTAL GATE CHARGE (nC) 100 t, TIME (ns) 8 7 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 6 V VDS = 64 V ID = 11.5 A tf 1 10 VGS = 0 V 100 10 1 0.1 100 TJ = 150°C 0.3 0.4 0.5 TJ = 25°C 0.7 0.6 TJ = −55°C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 100 10 1 0.1 TC = 25°C Single Pulse VGS ≤ 10 V 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 IPEAK (A) ID, DRAIN CURRENT (A) QG(tot) 9 80 1000 1 10 10 10 100 ms 1 ms 10 ms 100 ms 1s 100 TJ(initial) = 25°C TJ(initial) = 125°C 1 1000 0.001 0.01 0.1 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NTTFS5D9N08H TYPICAL CHARACTERISTICS ZqJC (°C/W) 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.000001 Single Pulse 0.00001 0.001 0.0001 0.01 PULSE TIME (sec) Figure 13. Transient Thermal Impedance www.onsemi.com 5 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A GENERIC MARKING DIAGRAM* XXXX A Y WW XXXX AYWW DOCUMENT NUMBER: DESCRIPTION: = Specific Device Code = Assembly Location = Year = Work Week 98AON13672G WDFN8 3.3X3.3, 0.65P DATE 10 SEP 2019 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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