NTUD3169CZ

NTUD3169CZ Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package Features • Complementary MOSFET Device • Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm • • • http://onsemi.com V(BR)DSS RDS(on) Max 1.5 W @ 4.5 V N−Channel 20 V 2.0 W @ 2.5 V 3.0 W @ 1.8 V 4.5 W @ 1.5 V 5.0 W @ −4.5 V P−Channel 20 V 6.0 W @ −2.5 V 7.0 W @ −1.8 V 10 W @ −1.5 V −0.2 A 0.22 A ID Max Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. This is a Pb−Free Device Applications • Load Switch with Level Shift • Optimized for Power Management in Ultra Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State tv5s Steady State tv5s Steady State tv5s N−Channel P−Channel tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD 200 800 −600 −55 to 150 200 260 mA °C mA °C ID Symbol VDSS VGS Value 20 ±8 220 160 280 −200 −140 −250 125 mW mA Unit V V PINOUT: SOT−963 S1 1 6 D1 G1 2 5 G2 D2 3 Top View 4 S2 MARKING DIAGRAM 2MG 1 SOT−963 CASE 527AD 2 M G Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) = Specific Device Code = Date Code = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% ORDERING INFORMATION Device NTUD3169CZT5G Package SOT−963 (Pb−Free) Shipping† 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 0 1 Publication Order Number: NTUD3169CZ/D NTUD3169CZ THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State, Minimum Pad (Note 3) Junction−to−Ambient – t v 5 s (Note 3) 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. Symbol RqJA Max 1000 600 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS N P N IDSS P Zero Gate Voltage Drain Current N P N P VGS = 0 V, VDS = −5.0 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS= −16 V VGS = 0 V VGS = 0 V, VDS = 5.0 V ID = 250 mA ID = −250 mA TJ = 25°C TJ = 85°C TJ = 25°C TJ = 85°C TJ = 25°C 20 −20 50 200 −50 −200 100 −100 ±100 ±100 nA nA V Symbol N/P Test Condition Min Typ Max Unit Zero Gate Voltage Drain Current IDSS IGSS Gate−to−Source Leakage Current VDS = 0 V, VGS = ±5.0 V nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) N P N P N P RDS(on) N P N P N P Forward Transconductance gFS VSD N P N P CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS CISS COSS CRSS P f = 1 MHz, VGS = 0 V VDS = −15 V N f = 1 MHz, VGS = 0 V VDS = 15 V 12.5 3.6 2.6 13.5 3.8 2.0 pF VGS = VDS ID = 250 mA ID = −250 mA VGS = 4.5 V, ID = 100 mA VGS = −4.5V, ID = −100 mA VGS = 2.5 V, ID = 50 mA VGS = −2.5V, ID = −50 mA VGS = 1.8 V, ID = 20 mA VGS = −1.8V, ID = −20 mA VGS = 1.5 V, ID = 10 mA VGS = −1.5 V, ID = −10 mA VGS = 1.2 V, ID = 1.0 mA VGS = −1.2 V, ID = −1.0 mA VDS = 5.0 V, ID = 125 mA VDS = −5.0 V, ID = −125 mA VGS = 0 V, IS = 10 mA VGS = 0 V, IS = −10 mA TJ = 25°C 0.4 −0.4 0.75 2.0 1.0 2.6 1.4 3.4 1.8 4.0 2.8 6.0 0.48 0.35 0.6 −0.6 1.0 −1.0 S V 1.0 −1.0 1.5 5.0 2.0 6.0 3.0 7.0 4.5 10 W V Drain−to−Source On Resistance Source−Drain Diode Voltage 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTUD3169CZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf P VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W N VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2.0 W 16.5 25.5 142 80 26 46 196 145 ns 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 NTUD3169CZ TYPICAL CHARACTERISTICS (N−CHANNEL) 0.4 1.8 V 0.3 VGS = 2 thru 5 V TJ = 25°C 1.6 V 1.4 V ID, DRAIN CURRENT (A) 0.4 VDS ≥ 5 V 0.3 TJ = −55°C TJ = 25°C TJ = 125°C ID, DRAIN CURRENT (A) 0.2 0.2 0.1 1.2 V 0.1 0 0 1 2 3 4 5 0 0 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics 4 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 220 mA TJ = 25°C 3 1.50 Figure 2. Transfer Characteristics TJ = 25°C 1.25 1.00 0.75 0.50 0.25 0 VGS = 2.5 V VGS = 4.5 V 2 1 0 0 1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 1.75 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID = 100 mA 1.50 1.25 1.00 0.75 0.50 −50 10 IDSS, LEAKAGE (nA) VGS = 4.5 V 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V 1000 TJ = 150°C TJ = 125°C 100 −25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTUD3169CZ TYPICAL CHARACTERISTICS (N−CHANNEL) 20.0 17.5 C, CAPACITANCE (pF) 15.0 12.5 10.0 7.50 5.00 2.50 0 0 Crss 1 Coss Ciss VGS = 0 V TJ = 25°C t, TIME (ns) 100 1000 VDD = 10 V ID = 200 mA VGS = 4.5 V td(off) tf tr td(on) 10 5 10 15 20 1 10 RG, GATE RESISTANCE (W) 100 GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.200 IS, SOURCE CURRENT (A) 0.175 0.150 0.125 0.100 0.075 0.050 0.025 0 0 0.2 0.4 0.6 Figure 8. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V TJ = 25°C 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 5 NTUD3169CZ TYPICAL CHARACTERISTICS (P−CHANNEL) 0.36 0.32 ID, DRAIN CURRENT (A) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0 1 2 3 4 5 1.2 V 2.0 V VGS = 2.2 thru 5 V TJ = 25°C ID, DRAIN CURRENT (A) 1.8 V 0.36 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0 1 2 3 4 VDS ≥ 5 V TJ = −55°C TJ = 125°C TJ = 25°C 1.6 V 1.4 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 10. On−Region Characteristics 12 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = 200 mA TJ = 25°C 8 4 Figure 11. Transfer Characteristics TJ = 25°C 3 VGS = 2.5 V 2 VGS = 4.5 V 1 4 0 1 2 3 4 5 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 12. On−Resistance vs. Gate Voltage 1.75 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.50 1.25 1.00 0.75 0.50 −50 10 10,000 Figure 13. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE (nA) ID = 200 mA VGS = 4.5 V 1000 TJ = 150°C 100 TJ = 125°C −25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 14. On−Resistance Variation with Temperature Figure 15. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 NTUD3169CZ TYPICAL CHARACTERISTICS (P−CHANNEL) 18 16 C, CAPACITANCE (pF) 14 t, TIME (ns) 12 10 8 6 4 2 0 0 Crss 2 4 6 8 10 12 14 16 18 20 1 1 Coss VGS = 0 V TJ = 25°C 100 Ciss td(off) tf tr td(on) 10 VDD = 10 V ID = 200 mA VGS = 4.5 V 10 RG, GATE RESISTANCE (W) 100 1000 DRAIN−TO−SOURCE VOLTAGE (V) Figure 16. Capacitance Variation 0.18 0.16 IS, SOURCE CURRENT (A) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 Figure 17. Resistive Switching Time Variation vs. Gate Resistance VGS = 0 V TJ = 25°C 0.8 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 18. Diode Forward Voltage vs. Current http://onsemi.com 7 NTUD3169CZ PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D C L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN 0.004 0.003 0.037 0.03 INCHES NOM MAX D A B 4 E 3 C 0.08 C A B A 6 5 12 e HE 6X b 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTUD3169CZ/D