NTUD3174NZ
Small Signal MOSFET
20 V, 220 mA, Dual N−Channel, 1.0 mm x
1.0 mm SOT−963 Package
Features
• Dual N−Channel MOSFET
• Offers a Low RDS(ON) Solution in the Ultra Small 1.0 x 1.0 mm
•
•
•
Package
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
This is a Pb−Free Device
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V(BR)DSS
2.0 W @ 2.5 V
20 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
tv5s
TA = 25°C
Steady
State
TA = 85°C
4.5 W @ 1.5 V
D1
D2
G1
G2
N−Channel
MOSFET
S1
S2
PINOUT: SOT−963
220
ID
160
mA
S1 1
6 D1
mW
G1 2
5 G2
3
4 S2
280
125
TA = 25°C
PD
tp = 10 ms
IDM
800
mA
TJ,
TSTG
−55 to
150
°C
IS
200
mA
260
°C
200
tv5s
Pulsed Drain Current
0.22 A
3.0 W @ 1.8 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
ID Max
1.5 W @ 4.5 V
Applications
• General Purpose Interfacing Switch
• Optimized for Power Management in Ultra Portable Equipment
• Analog Switch
RDS(ON) MAX
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
D2
Top View
MARKING
DIAGRAM
SOT−963
CASE 527AD
6
M
G
6MG
1
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NTUD3174NZ/D
NTUD3174NZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
Max
RqJA
Junction−to−Ambient – t = 5 s (Note 3)
Unit
1000
°C/W
600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 5 V
IDSS
VGS = 0 V, VDS = 16 V
Gate−to−Source Leakage Current
V
TJ = 25°C
50
TJ = 85°C
200
TJ = 25°C
100
IGSS
VDS = 0 V, VGS = ±5.0 V
VGS(TH)
VGS = VDS, ID = 100 mA
nA
nA
±100
nA
1.0
V
2.0
mV/°C
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
0.52
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(ON)
VGS = 4.5 V, ID = 100 mA
0.75
1.5
VGS = 2.5 V, ID = 50 mA
1.0
2.0
VGS = 1.8 V, ID = 20 mA
1.4
3.0
4.5
VGS = 1.5 V, ID = 10 mA
1.8
VGS = 1.2 V, ID = 1.0 mA
2.8
Forward Transconductance
gFS
VDS = 5.0 V, ID = 125 mA
0.48
Source−Drain Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
0.6
W
S
1.0
V
CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
12.5
f = 1.0 MHz, VGS = 0 V
VDS = 15 V
3.6
pF
2.6
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
16.5
VGS = 4.5 V, VDD = 10 V, ID = 200 mA,
RG = 2.0 W
tf
25.5
142
ns
80
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTUD3174NZT5G
Package
Shipping†
SOT−963
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTUD3174NZ
TYPICAL CHARACTERISTICS
VGS = 2 thru 5 V
1.8 V
1.4 V
0.2
1.2 V
0.1
0
1
2
3
4
0.2
0.1
0
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 220 mA
TJ = 25°C
3
2
1
0
1
2
3
4
TJ = 25°C
1.25
VGS = 2.5 V
1.00
VGS = 4.5 V
0.75
0.50
0.25
0
5
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.75
VGS = 0 V
ID = 100 mA
1.50
VGS = 4.5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = 25°C
0.3
0
5
4
0
TJ = −55°C
VDS ≥ 5 V
1.6 V
0.3
0
0.4
TJ = 25°C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.4
1000
1.25
1.00
TJ = 150°C
TJ = 125°C
100
0.75
0.50
−50
−25
0
25
50
75
100
125
150
10
0
TJ, JUNCTION TEMPERATURE (°C)
4
8
12
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTUD3174NZ
TYPICAL CHARACTERISTICS
20.0
17.5
t, TIME (ns)
12.5
10.0
VDD = 10 V
ID = 200 mA
VGS = 4.5 V
TJ = 25°C
Ciss
15.0
Coss
7.50
td(off)
100
tf
tr
td(on)
10
5.00
Crss
2.50
0
0
5
10
15
1
20
1
10
100
GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
0.200
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
1000
VGS = 0 V
VGS = 0 V
0.175
TJ = 25°C
0.150
0.125
0.100
0.075
0.050
0.025
0
0
0.2
0.4
0.6
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
1
NTUD3174NZ
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE D
D
6
A
B
5
4
1 2
3
A
L
HE
E
e
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
C
DIM
A
b
C
D
E
e
L
HE
C
b
0.08 C A
B
MILLIMETERS
MIN
NOM
MAX
0.34
0.37
0.40
0.10
0.15
0.20
0.07
0.12
0.17
0.95
1.00
1.05
0.75
0.80
0.85
0.35 BSC
0.05
0.10
0.15
0.95
1.00
1.05
MIN
INCHES
NOM
MAX
0.004
0.003
0.037
0.03
0.006 0.008
0.005 0.007
0.039 0.041
0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
SOLDERING FOOTPRINT*
0.35
0.014
0.35
0.014
0.90
0.0354
0.20
0.008
0.20
0.008
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTUD3174NZ/D