NTVB Series
Thyristor Surge Protectors
High Voltage Bidirectional
NTVB Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NTVB Series in equipment will help meet various
regulatory requirements including: GR−1089−CORE, IEC
61000−4−5, ITU K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68,
EN 60950, UL 1950.
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BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
MT1
MT2
ELECTRICAL PARAMETERS
VDRM
V(BO)
VT
IDRM
I(BO)
IT
IH
Device
V
V
V
mA
mA
A
mA
NTVB058NSx−L
58
77
4
5
800
2.2
150
NTVB065NSx−L
65
88
4
5
800
2.2
150
NTVB090NSx−L
90
130
4
5
800
2.2
150
NTVB170Sx−L
170
265
4
5
800
2.2
150
NTVB170NSx−L
170
220
4
5
800
2.2
150
NTVB180Sx−L
170
240
4
5
800
2.2
150
NTVB200Sx−L
200
320
4
5
800
2.2
150
NTVB220NSx−L
220
300
4
5
800
2.2
150
NTVB270Sx−L
270
365
4
5
800
2.2
150
NTVB275NSx−L
275
350
4
5
800
2.2
150
NTVB300Sx−L
300
400
4
5
800
2.2
150
SURGE DATA RATINGS
Waveform
*
x = series ratings
SMB
JEDEC DO−214AA
CASE 403C
MARKING DIAGRAM
AYWW
XXXXG
G
XXXX = Specific Device Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Specification
Voltage
ms
Current
ms
A
B
C
Unit
GR−1089−CORE
2x10
2x10
150
250
500
A(pk)
TIA−968−A
10x160
10x160
90
150
200
GR−1089−CORE
10x360
10x360
75
125
175
TIA−968−A
10x560
10x560
50
100
150
ITU−T K.20/21
10x700
5x310
75
100
200
GR−1089−CORE
10x1000
10x1000
50
80
100
See detailed ordering and shipping information on page 4 of
this data sheet.
Recognized Components
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 0
1
Publication Order Number:
NTVB058NS/D
NTVB Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics (Notes 1, 2, 3)
Breakover Voltage (Both Polarities)
VDRM
NTVB058NSx−L
NTVB065NSx−L
NTVB090NSx−L
NTVB170Sx−L
NTVB170NSx−L
NTVB180Sx−L
NTVB200Sx−L
NTVB220NSx−L
NTVB270Sx−L
NTVB275NSx−L
NTVB300Sx−L
( VD1 = 50 V ) Both Polarities
( VD2 = VDRM ) Both Polarities
Min
Typ
V(BO)
NTVB058NSx−L
NTVB065NSx−L
NTVB090NSx−L
NTVB170Sx−L
NTVB170NSx−L
NTVB180Sx−L
NTVB200Sx−L
NTVB220NSx−L
NTVB270Sx−L
NTVB275NSx−L
NTVB300Sx−L
Off−State Voltage (Both Polarities)
Off State Current
Symbol
Max
77
88
130
265
220
240
320
300
365
350
400
Unit
V
V
58
65
90
170
170
170
200
220
270
275
300
IDRM1
IDRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 3) VS = 500 V; IT = 2.2 A
IH
150
250
−
mA
On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
VT
−
−
4.0
V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt
−
−
500
A/mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, VD = 0.8 VDRM, TJ = 25°C)
dv/dt
5.0
−
−
kV/mSec
Symbol
A
B
C
Unit
84
79
58
39
39
37
36
33
31
28
28
129
123
95
150
59
59
56
52
47
44
44
222
198
154
195
99
97
110
81
76
97
71
CAPACITANCE
Typ
Characteristics
(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)
NTVB058NSx−L
NTVB065NSx−L
NTVB090NSx−L
NTVB170Sx−L
NTVB170NSx−L
NTVB180Sx−L
NTVB200Sx−L
NTVB220NSx−L
NTVB270Sx−L
NTVB275NSx−L
NTVB300Sx−L
1. Electrical parameters are based on pulsed test methods.
2. Measured under pulsed conditions to reduce heating
3. Allow cooling before testing second polarity.
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2
Co
pF
NTVB Series
SURGE RATINGS
Symbol
Characteristics
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 4, 5 and 6)
2 x 10 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
A
B
C
Unit
A(pk)
IPPS1
IPPS3
IPPS4
IPPS5
IPPS6
IPPS7
150
90
75
50
75
50
250
150
125
100
100
80
500
200
150
150
200
100
4. Allow cooling before testing second polarity.
5. Measured under pulse conditions to reduce heating.
6. Nominal values may not represent the maximum capability of a device.
THERMAL CHARACTERISTICS
Symbol
TSTG
TJ
R0JA
Rating
Value
Unit
Storage Temperature Range
−65 to +150
°C
Operating Temperature Range
−40 to +150
°C
90
°C/W
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
Ipp - PEAK PULSE CURRENT - %Ipp
+I
Peak
Value
100
I(BO)
IH
−Voltage
Half Value
50
0
IT
tr = rise time to peak value
tf = decay time to half value
+Voltage
VT
0 tr
VDRM V(BO)
tf
TIME (ms)
−I
Figure 2. Voltage Current Characteristics of TSPD
Figure 1. Exponential Decay Pulse Waveform
Symbol
Parameter
VDRM
Peak Off State Voltage
V(BO)
Breakover Voltage
I(BO)
Breakover Current
IH
Holding Current
VT
On State Voltage
IT
On State Current
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3
NTVB Series
ORDERING INFORMATION
Part Number
Case
Shipping†
SMB
(Pb−Free)
2500 / Tape and Reel
Marking
NTVB058NSB−L
58NB
NTVB058NSC−L
58NC
NTVB065NSA−L
65NA
NTVB065NSC−L
65NC
NTVB090NSA−L
90NA
NTVB170SA−L
170A
NTVB170SC−L
170C
NTVB170NSC−L
17NC
NTVB180SA−L
180A
NTVB200SA−L
200A
NTVB200SB−L
200B
NTVB200SC−L
200C
NTVB220NSC−L
22NC
NTVB270SA−L
270A
NTVB270SB−L
270B
NTVB270SC−L
270C
NTVB275NSC−L
27NC
NTVB300SA−L
300A
NTVB300SB−L
300B
NTVB300SC−L
300C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTVB Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
J
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NP0640S/D