NTZD3154N
MOSFET – Dual, N-Channel,
Small Signal
20 V, 540 mA
Features
•
•
•
•
•
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Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
400 mW @ 4.5 V
500 mW @ 2.5 V
20
540 mA
700 mW @ 1.8 V
D1
Applications
•
•
•
•
ID Max (Note 1)
RDS(on) Typ
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G1
G2
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±7.0
V
540
mA
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Steady State
Continuous Drain Current
(Note 1)
tv5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
tv5s
Pulsed Drain Current
ID
PD
ID
PD
390
250
mW
570
mA
410
280
1.5
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
350
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Symbol
Max
Unit
500
°C/W
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State
(Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
RqJA
June, 2019 − Rev. 3
6
1
SOT−563−6
CASE 463A
TV
M
G
TV M G
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
3
4 S2
D2
Top View
ORDERING INFORMATION
447
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2014
S2
MARKING
DIAGRAM
mW
IDM
tp = 10 ms
Operating Junction and Storage Temperature
N−Channel
MOSFET
S1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
D2
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
NTZD3154N/D
NTZD3154N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
−
−
V
V(BR)DSS/TJ
−
−
14
−
mV/°C
TJ = 25°C
−
−
1.0
mA
TJ = 125°C
−
−
5.0
−
"5.0
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V
VDS = 16 V
IGSS
VDS = 0 V, VGS = "4.5 V
−
VGS(TH)
VGS = VDS, ID = 250 mA
0.45
−
1.0
V
VGS(TH)/TJ
−
−
2.0
−
mV/°C
VGS = 4.5 V, ID = 540 mA
−
0.4
0.55
W
VGS = 2.5 V, ID = 500 mA
−
0.5
0.7
VGS = 1.8 V, ID = 350 mA
−
0.7
0.9
VDS = 10 V, ID = 540 mA
−
1.0
−
S
−
80
150
pF
−
13
25
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
−
10
20
Total Gate Charge
QG(TOT)
−
1.5
2.5
Threshold Gate Charge
QG(TH)
−
0.1
−
Gate−to−Source Charge
QGS
−
0.2
−
Gate−to−Drain Charge
QGD
−
0.35
−
−
6.0
−
−
4.0
−
−
16
−
−
8.0
−
TJ = 25°C
−
0.7
1.2
TJ = 125°C
−
0.6
−
VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA
−
6.5
−
VGS = 0 V, f = 1.0 MHz, VDS = 16 V
VGS = 4.5 V, VDS = 10 V; ID = 540 mA
nC
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V, ID = 540 mA,
RG = 10 W
tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VGS = 0 V,
IS = 350 mA
VSD
tRR
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTZD3154N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.2
1.8
5.5 V
VGS = 1.6 V
VGS = 2.0 V to 2.2 V
0.6
VGS = 1.4 V
0.4
0.2
VGS = 1.2 V
0
0
RDS(on), DRAIN−TO−SOURCE CURRENT
RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.8 V
0.8
2
3
4
5
6
TJ = −55°C
1.4
TJ = 100°C
1.2
1.0
0.8
0.6
0.4
TJ = 25°C
0.2
VGS = 1.0 V
1
VDS w 10 V
1.6
7
8
9
0
0.5
10
1.5
2.0
2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.0
0.9
1.0
ID = 0.54 A
TJ = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
0.8
VGS = 1.8 V
0.7
0.6
VGS = 2.5 V
0.5
VGS = 4.5 V
0.4
0.3
0.2
0.3
1
6
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.4
1
1.2
1000
VGS = 0 V
IDSS, LEAKAGE (nA)
ID = 0.54 A
VGS = 4.5 V
1.8
1.6
1.4
1.2
1
TJ = 150°C
100
TJ = 100°C
0.8
0.6
−50
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.0
TJ = 25°C
10
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
NTZD3154N
TJ = 25°C
VGS = 0 V
150
CRSS
100
CISS
50
0
5
COSS
VDS = 0 V
VGS
0
5
VDS
10
15
20
5
VDS
4
12
3
8
2
QGS
0
4
ID = 0.54 A
TJ = 25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
0.6
100
IS, SOURCE CURRENT (A)
VDS = 10 V
ID = 0.2 A
VGS = 4.5 V
t, TIME (ns)
QGD
1
Figure 7. Capacitance Variation
td(OFF
)
10
tf
td(ON)
tr
1
16
VGS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
20
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
200
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
RG, GATE RESISTANCE (W)
0.5
VGS = 0 V
TJ = 25°C
0.4
0.3
0.2
0.1
0
0.2
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1
Figure 10. Diode Forward Voltage versus
Current
ORDERING INFORMATION
Device
Package
Shipping
NTZD3154NT1G
NTZD3154NT1H
NTZD3154NT2G
NTZD3154NT2H
4000 / Tape & Reel
SOT−563
(Pb−Free)
NTZD3154NT5G
8000 / Tape & Reel
NTZD3154NT5H
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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