NTZD3158P
Small Signal MOSFET
−20 V, −430 mA, Dual P−Channel
with ESD Protection, SOT−563
Features
•
•
•
•
•
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) Typ
ID Max
0.5 W @ −4.5 V
0.6 W @ −2.5 V
−20 V
−430 mA
1.0 W @ −1.8 V
D2
D1
Applications
•
•
•
•
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G2
G1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
−430
mA
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Steady State
Continuous Drain Current
(Note 1)
tv5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
ID
PD
ID
PD
tp = 10 ms
−310
250
mW
−455
mA
mW
IDM
−750
mA
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−350
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
MARKING DIAGRAM
6
1
SOT−563−6
CASE 463A
Parameter
Junction−to−Ambient – t v 5 s (Note 1)
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
D2
4 S2
3
Top View
Symbol
RqJA
Max
Unit
500
°C/W
447
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 0
1
TJ M G
G
TJ
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Junction−to−Ambient – Steady State (Note 1)
S2
−328
280
Pulsed Drain Current
tv5s
P−Channel
MOSFET
S1
1
ORDERING INFORMATION
Device
Package
Shipping†
NTZD3158PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTZD3158P/D
NTZD3158P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
18
mV/°C
VGS = 0 V
TJ = 25°C
−1.0
VDS = −16 V
TJ = 125°C
−2.0
IGSS
VDS = 0 V, VGS = "4.5 V
VGS(TH)
VGS = VDS, ID = −250 mA
"2.0
mA
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
−0.45
−1.0
−1.9
V
mV/°C
VGS = −4.5 V, ID = −430 mA
0.5
0.9
VGS = −2.5 V, ID = −300 mA
0.6
1.2
VGS = −1.8 V, ID = −150 mA
1.0
2.0
VDS = −10 V, ID = −430 mA
1.0
W
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
105
175
15
30
10
20
1.7
2.5
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.4
td(on)
10
tr
12
VGS = −4.5 V, VDS = −10 V,
ID = −215 mA
pF
nC
0.1
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
td(off)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −215 mA, RG = 10 W
tf
ns
35
19
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
VGS = 0 V,
IS = −350 mA
TJ = 25°C
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −350 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
−0.8
13
−1.2
V
ns
NTZD3158P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0.8
1
TJ = 25°C
VGS = −2 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
1
−1.6 V
VGS = −1.8 V
0.6
−1.4 V
0.4
−1.2 V
0.2
−1 V
0
1
0
2
3
5
4
6
7
8
9
VDS ≥ −10 V
0.8
0.6
0.4
TJ = −55°C
0.2
25°C
10
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.5
1
1.5
2
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.8
ID = −0.43 A
TJ = 25°C
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
3
5
2
4
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
6
1.4
1.2
VGS = −1.8 V
1.1
1.0
0.9
0.8
0.7
VGS = −2.5 V
0.6
0.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = −0.43 A
VGS = −4.5 V
VGS = 0 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
TJ = 25°C
1.3
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
100°C
0
1.2
1
TJ = 150°C
1000
TJ = 100°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
2
4
6
8
10
12
14
16
18
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTZD3158P
VGS = 0 V
TJ = 25°C
200
CISS
150
100
COSS
50
CRSS
0
0
5
10
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
4
9
8
−VGS
−VDS
7
6
3
5
4
2
QGS
QGD
3
1
0
2
ID = −0.215 A
TJ = 25°C
0.2
0
Figure 7. Capacitance Variation
1.2 1.4 1.6
0.4 0.6 0.8
1
QG, TOTAL GATE CHARGE (nC)
1.8
1
2
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
−IS, SOURCE CURRENT (AMPS)
0.6
td(off)
t, TIME (ns)
10
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
250
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
tf
tr
td(on)
10
VDD = −10 V
ID = −0.215 A
VGS = −4.5 V
1
1
10
VGS = 0 V
TJ = 25°C
0.4
0.2
0
0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTZD3158P
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
5
6
1
e
2
A
4
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NTZD3158P/D
