NTZS3151P

NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS −20 V RDS(on) Typ 120 mW @ −4.5 V 144 mW @ −2.5 V 195 mW @ −1.8 V P−Channel MOSFET D −950 mA ID Max Applications • Load/Power Switches • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 70°C Symbol VDSS VGS ID PD Value −20 ±8.0 −860 −690 170 −950 −760 210 −4.0 −55 to 150 −360 260 mW A °C mA °C mW mA Unit V V mA 6 G S MARKING DIAGRAM TX M G G Steady State TA = 25°C TA = 70°C tv5s ID PD IDM TJ, TSTG IS TL 1 SOT−563−6 CASE 463A tv5s tp = 10 ms TX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) PINOUT: SOT−563 D1 6D THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 5 s (Note 1) Symbol RqJA RqJA Max 720 600 Unit °C/W D2 5D G 3 Top View 4S Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in. sq. [1 oz.] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTZS3151P/D NTZS3151P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ VGS = 0 V VDS = −20 V TJ = 25°C TJ = 125°C VGS = 0 V, ID = −250 mA −20 −13 −1.0 −5.0 "100 nA V mV/°C mA Symbol Test Condition Min Typ Max Unit IDSS IGSS VGS(TH) VGS(TH)/TJ Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = "8.0 V VGS = VDS, ID = −250 mA −0.45 2.4 VGS = −4.5 V, ID = −950 mA 120 112 144 195 3.1 −1.0 V mV/°C 150 142 200 240 mW RDS(on) VGS = −4.5 V, ID = −770 mA VGS = −2.5 V, ID = −670 mA VGS = −1.8 V, ID = −200 mA VDS = −10 V, ID = −810 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf S 458 VGS = 0 V, f = 1.0 MHz, VDS = −16 V 61 38 5.6 VGS = −4.5 V, VDS = −10 V; ID = −770 mA 0.6 0.9 1.2 pF nC 5.0 VGS = −4.5 V, VDD = −10 V, ID = −950 mA, RG = 6.0 W 12 23.7 18 ns VSD tRR VGS = 0 V, IS = −360 mA TJ = 25°C TJ = 125°C −0.64 −0.5 10.5 −0.9 V Reverse Recovery Time VGS = 0 V, dIS/dt = 100 A/ms, IS = −360 mA ns 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTZS3151P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 4 −ID, DRAIN CURRENT (AMPS) VGS = −3 V VGS = −2 V −ID, DRAIN CURRENT (AMPS) 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −1.4 V −1.2 V −1 V −1.8 V TJ = 25°C −1.6 V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 TJ = −55°C 25°C 125°C 0.5 1.5 2 2.5 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 VDS ≥ −10 V Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.3 VGS = −4.5 V 0.3 Figure 2. Transfer Characteristics TJ = 25°C 0.2 TJ = 125°C 0.1 TJ = 25°C TJ = −55°C 0 0 1 2 3 −ID, DRAIN CURRENT (AMPS) 4 0.2 VGS = −1.8 V VGS = −2.5 V VGS = −4.5 V 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 −50 100 10000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage ID = −0.95 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) 1000 TJ = 125°C −25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTZS3151P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 1000 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 10 5 −VGS −VDS 0 5 10 15 20 25 COSS CISS 5 QT 4 3 2 1 0 QGS QGD −VGS 30 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VDS = 0 V CRSS VGS = 0 V TJ = 25°C 25 20 15 10 ID = −0.77 A TJ = 25°C 6 5 0 −VDS 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1.2 −IS, SOURCE CURRENT (AMPS) 1.0 0.8 0.6 0.4 0.2 0 0.1 VGS = 0 V TJ = 25°C 1000 VDD = −25 V ID = −0.95 A VGS = −4.5 V t, TIME (ns) 100 td(off) tf tr td(on) 10 1 1 10 RG, GATE RESISTANCE (W) 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTZS3151PT1G NTZS3151PT5G Package SOT−563 (Pb−Free) SOT−563 (Pb−Free) Shipping 4000 / Tape & Reel 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTZS3151P PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 D −X− 6 5 4 A L 1 2 3 E −Y− b HE e 5 6 PL M C XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTZS3151P/D