NTZS3151P
MOSFET – P-Channel,
Small Signal, SOT-563
-20 V, -950 mA
Features
•
•
•
•
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Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Typ
ID Max
120 mW @ −4.5 V
144 mW @ −2.5 V
−20 V
−950 mA
195 mW @ −1.8 V
Applications
P−Channel MOSFET
• Load/Power Switches
• Battery Management
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
−860
mA
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
TA = 70°C
Steady State
Continuous Drain Current
(Note 1)
tv5s
Power Dissipation
(Note 1)
TA = 25°C
TA = 70°C
ID
PD
ID
−690
170
mW
−950
mA
−760
tv5s
PD
210
mW
tp = 10 ms
IDM
−4.0
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−360
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
720
°C/W
Junction−to−Ambient – t v 5 s (Note 1)
RqJA
600
Pulsed Drain Current
Operating Junction and Storage Temperature
S
MARKING
DIAGRAM
6
1
SOT−563−6
CASE 463A
TX M G
G
TX
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT: SOT−563
D 1
6 D
D 2
5 D
G
4 S
THERMAL RESISTANCE RATINGS
Parameter
Top View
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
© Semiconductor Components Industries, LLC, 2013
June, 2019 − Rev. 3
3
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
NTZS3151P/D
NTZS3151P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
−13
mV/°C
VGS = 0 V
TJ = 25°C
−1.0
VDS = −20 V
TJ = 125°C
−5.0
IGSS
VDS = 0 V, VGS = "8.0 V
VGS(TH)
VGS = VDS, ID = −250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
gFS
−1.0
2.4
VGS = −4.5 V, ID = −950 mA
RDS(on)
−0.45
V
mV/°C
120
150
mW
VGS = −4.5 V, ID = −770 mA
112
142
VGS = −2.5 V, ID = −670 mA
144
200
VGS = −1.8 V, ID = −200 mA
195
240
VDS = −10 V, ID = −810 mA
3.1
S
458
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
61
38
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.2
td(ON)
5.0
nC
5.6
VGS = −4.5 V, VDS = −10 V;
ID = −770 mA
0.6
0.9
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −950 mA, RG = 6.0 W
tf
ns
12
23.7
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = −360 mA
TJ = 25°C
−0.64
TJ = 125°C
−0.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −360 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
10.5
−0.9
V
ns
NTZS3151P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4
3.5
−1.8 V
VGS = −3 V
VGS = −2 V
3
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
4
TJ = 25°C
−1.6 V
2.5
2
−1.4 V
1.5
1
−1.2 V
0.5
−1 V
0
0.5
1
1.5
2.5
2
3
3.5
4
4.5
3
2.5
2
1.5
1
0.5
5
0.5
1.5
2
2.5
1
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.2
TJ = 125°C
0.1
TJ = 25°C
TJ = −55°C
0
1
2
3
−ID, DRAIN CURRENT (AMPS)
0
4
0.3
3
TJ = 25°C
VGS = −1.8 V
0.2
VGS = −2.5 V
VGS = −4.5 V
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Drain Current and
Temperature
10000
ID = −0.95 A
VGS = −4.5 V
VGS = 0 V
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
125°C
0
VGS = −4.5 V
1.6
25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.3
1.8
TJ = −55°C
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS ≥ −10 V
3.5
1.4
1.2
1
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
0
5
10
15
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTZS3151P
VDS = 0 V
C, CAPACITANCE (pF)
900
VGS = 0 V
TJ = 25°C
CRSS
800
700
600
CISS
500
400
300
200
COSS
100
0
10
5
0
−VGS −VDS
5
10
15
20
25
30
5
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
25
4
−VGS
20
3
15
QGS
2
QGD
1
0
10
0
1
5
ID = −0.77 A
TJ = 25°C
−VDS
5
2
3
4
QG, TOTAL GATE CHARGE (nC)
6
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1.2
VDD = −25 V
ID = −0.95 A
VGS = −4.5 V
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
1000
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
td(off)
tf
tr
10
td(on)
1.0
0.8
0.6
0.4
0.2
0
0.1
1
1
100
10
VGS = 0 V
TJ = 25°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZS3151PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZS3151PT1H
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZS3151PT5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE H
6
1
SCALE 4:1
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
DATE 26 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M = Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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