NUD3105LT1

DATA SHEET www.onsemi.com Integrated Relay, Inductive Load Driver RELAY/INDUCTIVE LOAD DRIVER 0.5 AMPERE, 8.0 VOLT CLAMP NUD3105 6 This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. 1 SOT−23 (TO−236) CASE 318 SC−74 CASE 318F STYLE 7 MARKING DIAGRAMS Features • Provides a Robust Driver Interface Between DC Relay Coil and • • • • • • • Sensitive Logic Circuits Optimized to Switch Relays from 3.0 V to 5.0 V Rail Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(on) Reduces System Current Drain SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and Halide Free Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette • • Recorders Industrial:Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers © Semiconductor Components Industries, LLC, 2014 September, 2022 − Rev. 13 1 JW4 M G G JW4 D G G 1 JW4 M D G = Device Code = Date Code* = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NUD3105LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel NUD3105DMT1G SOT−74 (Pb−Free) 3000 / Tape & Reel SZNUD3105DMT1G SOT−74 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUD3105/D NUD3105 Drain (3) Drain (6) Gate (2) Gate (1) Drain (3) 1.0 k 1.0 k Gate (5) 1.0 k 300 k 300 k 300 k Source (1) CASE 318 Source (4) CASE 318F Source (2) Figure 1. Internal Circuit Diagrams MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating VDSS Drain to Source Voltage − Continuous VGS Value Unit 6.0 Vdc Gate to Source Voltage – Continuous 6.0 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2) 50 mJ Ezpk Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) 4.5 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) Derating Above 25°C SOT−23 225 1.8 mW mW/°C Total Power Dissipation (Note 1) Derating Above 25°C SC−74 380 1.5 mW mW/°C SOT−23 SC−74 556 329 °C/W RqJA Thermal Resistance, Junction−to−Ambient Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 6.0 8.0 9.0 V OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) BVGSO Ig = 1.0 mA − − 8.0 V IDSS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) − − − − 15 15 mA IGSS Gate Body Leakage Current (318) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 19 50 mA Gate Body Leakage Current (318F) (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 35 65 mA www.onsemi.com 2 NUD3105 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit 0.8 0.8 1.2 − 1.4 1.4 V − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W 300 200 400 − − − mA 350 570 − mmhos ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) RDS(on) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ = 85°C) (ID = 500 mA, VGS = 5.0 V, TJ = 85°C) IDS(on) gFS Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) DYNAMIC CHARACTERISTICS Ciss Input Capacitance (VDS = 5.0 V,VGS = 0 V, f = 10 kHz) − 25 − pF Coss Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 37 − pF Crss Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) − 8.0 − pF − − 25 80 − − − − 44 44 − − − − 23 32 − − − − 53 30 − − SWITCHING CHARACTERISTICS tPHL tPLH tPHL tPLH tf tr tf tr Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V) Low to High Propagation Delay; Figure 1 (5.0 V) nS High to Low Propagation Delay; Figure 1 (3.0 V) Low to High Propagation Delay; Figure 1 (3.0 V) Transition Times: Fall Time; Figure 1 (5.0 V) Rise Time; Figure 1 (5.0 V) nS Fall Time; Figure 1 (3.0 V) Rise Time; Figure 1 (3.0 V) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms www.onsemi.com 3 NUD3105 TYPICAL CHARACTERISTICS 10 TJ = 25°C VGS = 5.0 V 1.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 VGS = 3.0 V 0.1 VGS = 2.0 V 0.01 0.001 0.01 50°C 0.0001 −40°C VGS = 1.0 V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.000001 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics Figure 3. Transfer Function 5.0 50 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) ID = 0.5 A VGS = 3.0 V 1000 ID = 0.25 A VGS = 3.0 V 800 600 400 ID = 0.5 A VGS = 5.0 V 200 0 −50 −25 0 25 50 75 100 125 45 −40°C ID = 250 mA 40 35 125°C 30 85°C 25 50°C 20 25°C 15 0.8 1.0 1.2 1.4 1.6 1.8 TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with Gate−To−Source Voltage IZ = 10 mA VZ, ZENER CLAMP VOLTAGE (V) 8.18 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 −50 2.0 13.0 8.20 VZ, ZENER VOLTAGE (V) 85°C 0.001 0.00001 1200 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 0.1 25°C 0.0001 0.00001 VDS = 0.8 V 1.0 −25 0 25 50 75 100 125 VGS = 0 V 12.0 −40°C 11.0 25°C 10.0 9.0 8.0 7.0 85°C 6.0 0.1 1.0 10 100 1000 TEMPERATURE (°C) IZ, ZENER CURRENT (mA) Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current www.onsemi.com 4 NUD3105 TYPICAL CHARACTERISTICS (continued) 1.2 40 35 125°C IGSS, GATE LEAKAGE (mA) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1.1 1.0 0.9 85°C 0.8 50°C 0.7 25°C 0.6 −40°C 0.5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 30 25 VGS = 5.0 V 20 15 VGS = 3.0 V 10 5 0 −50 0 −25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 75 100 125 TEMPERATURE (°C) Figure 8. On−Resistance vs. Drain Current and Temperature 1.0 25 VGS = 3.0 V, TC = 25°C Figure 9. Gate Leakage vs. Temperature ID−Continuous = 0.5 A RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT DC PW = 0.1 s DC = 50% 0.1 PW = 10 ms DC = 20% PW = 7.0 ms DC = 5% Typical IZ vs. VZ V(BR)DSS min = 6.0 V 0.01 0.01 0.1 10 1.0 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 10. Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW SINGLE PULSE 0.1 t1 t2 PERIOD DUTY CYCLE = t1/t2 1.0 10 100 1000 t1, PULSE WIDTH (ms) Figure 11. Transient Thermal Response www.onsemi.com 5 10,000 100,000 1,000,000 NUD3105 Designing with this Data Sheet 4. Verify that the circuit driving the gate will meet the VGS(th) from the Electrical Characteristics table. 5. Using the max output current calculated in step 1, check Figure 7 to insure that the range of Zener clamp voltage over temperature will satisfy all system & EMI requirements. 6. Use IGSS and IDSS from the Electrical Characteristics table to ensure that “OFF” state leakage over temperature and voltage extremes does not violate any system requirements. 7. Review circuit operation and insure none of the device max ratings are being exceeded. 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the NUD3105 will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 and 11 with the SOA notes to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. APPLICATIONS DIAGRAMS +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + Vout (3) Vout (3) NUD3105 NUD3105 Vin (1) Vin (1) GND (2) GND (2) Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V Level Translating Interface www.onsemi.com 6 NUD3105 Max Continuous Current Calculation for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C Assuming ±10% Make Tolerance, R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C − TC for Annealed Copper Wire is 0.4%/°C − AROMAT JS1E−5V R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc AROMAT JS1E−5V + + + + +4.5 TO +5.5 Vdc + AROMAT JS1E−5V AROMAT JS1E−5V AROMAT TX2−5V − − − Vout (3) Vout (3) NUD3105 NUD3105 Vin (1) Vin (1) GND (2) GND (2) Figure 13. A 140 mW, 5.0 V Relay with TTL Interface Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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