NUD3112

NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features http://onsemi.com MARKING DIAGRAMS 3 1 2 SOT−23 CASE 318 STYLE 21 JW5 MG G • Provides a Robust Driver Interface Between D.C. Relay Coil and • • • • • • Sensitive Logic Circuits Optimized to Switch Relays of 12 V Rail Capable of Driving Relay Coils Rated up to 6.0 W at 12 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain Pb−Free Packages are Available JW5 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 6 1 SC−74 CASE 318F STYLE 7 JW5 MG G Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette • Recorders Industrial: Small Appliances, Security Systems, Automated Test Equipment, Garage Door Openers JW5 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3112LT1 NUD3112LT1G NUD3112DMT1 Package SOT−23 SOT−23 (Pb−Free) SC−74 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel SC−74 NUD3112DMT1G (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Drain (6) Drain (3) Gate (1) 1.0 k 300 k Gate (2) 1.0 k 300 k 1.0 k 300 k Gate (5) Source (2) Source (1) Source (4) CASE 318 CASE 318F © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 7 Publication Order Number: NUD3112/D NUD3112 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol VDSS VGS ID Ez Drain to Source Voltage – Continuous Gate to Source Voltage – Continuous Drain Current – Continuous Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) Junction Temperature Operating Ambient Temperature Storage Temperature Range Total Power Dissipation (Note 1) Derating Above 25°C Total Power Dissipation (Note 1) Derating Above 25°C Thermal Resistance Junction−to−Ambient (Note 1) Human Body Model (HBM) According to EIA/JESD22/A114 SOT−23 SC−74 SOT−23 SC−74 Rating Value 14 6 500 50 150 −40 to 85 −65 to +150 225 1.8 380 3.0 556 329 2000 Unit Vdc Vdc mA mJ °C °C °C mW mW/°C mW mW/°C °C/W V TJ TA Tstg PD PD RqJA ESD 1. Mounted onto minimum pad board. TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol OFF CHARACTERISTICS VBRDSS BVGSO IDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) Ig = 1.0 mA Drain to Source Leakage Current (VDS = 12 V , VGS = 0 V, TA = 25°C) (VDS = 12 V, VGS = 0 V, TA = 85°C) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 14 16 17 V Characteristic Min Typ Max Unit − − − − − − − − − − 8 20 40 35 65 V mA IGSS mA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TA = 85°C) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TA=85°C) (ID = 500 mA, VGS = 5.0 V, TA=85°C) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TA = 85°C) Forward Transconductance (VOUT = 12.0 V, IOUT = 0.25 A) 0.8 0.8 − − − − − 1.2 − − − − − − 1.4 1.4 1.2 1.3 0.9 1.3 0.9 V RDS(on) W IDS(on) 300 200 350 400 − 490 − − − mA mmhos gFS http://onsemi.com 2 NUD3112 TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 12.0 V, VGS = 0 V, f = 10 kHz) − − − 23 30 7 − − − pF pF pF Characteristic Min Typ Max Unit SWITCHING CHARACTERISTICS Symbol tPHL tPLH tf tr Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1 (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1 (VDS = 12 V, VGS = 5.0 V) Min − − − − Typ 21 91 36 61 Max − − nS − − Units nS VIH Vin 50% 0V tPHL 90% Vout 50% 10% VOL tr tPLH VOH tf Figure 1. Switching Waveforms http://onsemi.com 3 NUD3112 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 1 I D, DRAIN CURRENT (A) VGS = 5.0 V I D, DRAIN CURRENT (A) VGS = 3.0 V 0.1 VGS = 2.0 V VGS = 1.5 V 1 VDS = 0.8 V 0.1 0.01 0.01 125°C 85°C 25°C −40°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 5.0 0.001 VGS = 1.0 V 0.001 0.0001 0.0001 0.00001 0.8 0.5 0.00001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 1200 1000 800 600 400 200 0 −50 ID = 0.25 A VGS = 3.0 V ID = 0.5 A VGS = 3.0 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0.6 125°C Figure 3. Transfer Function ID = 250 mA ID = 0.5 A VGS = 5.0 V 85°C 25°C −40°C −25 0 50 25 75 TEMPERATURE (°C) 100 125 0.8 1 1.2 1.4 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.6 Figure 4. On−Resistance Variation vs. Temperature 15.98 V Z , ZENER VOLTAGE (V) 15.96 15.94 15.92 15.90 15.88 15.86 15.84 15.82 15.80 −50 −25 0 25 50 75 TEMPERATURE (°C) 100 125 V Z , ZENER CLAMP VOLTAGE (V) IZ = 10 mA 21 20 19 18 17 16 15 14 Figure 5. RDS(ON) Variation vs. Gate−to−Source Voltage 85°C 25°C −40°C 1 10 100 IZ, ZENER CURRENT (mA) 1000 13 0.1 Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3112 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 ID, DRAIN CURRENT (A) 25°C −40°C VGS = 3.0 V 125°C 85°C IGSS, GATE LEAKAGE (mA) 45 40 35 30 25 20 15 10 5 0 −50 −25 0 25 50 75 TEMPERATURE (°C) 100 125 VGS = 3.0 V VGS = 5.0 V Figure 8. On−Resistance vs. Drain Current and Temperature Figure 9. Gate Leakage vs. Temperature +12V Relay +5V / 3.3V clamp Zener clamp Zener 1.0 k Logic ESD Zener 300 k ESD Zener Figure 10. Typical Application Circuit http://onsemi.com 5 NUD3112 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D 3 SEE VIEW C E 1 2 HE c b e q 0.25 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NUD3112 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L C STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SMALLBLOCK is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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