NUD3124DMT1

DATA SHEET www.onsemi.com Automotive Inductive Load Driver 3 1 6 2 1 SC−74 CASE 318F STYLE 7 SOT−23 CASE 318 STYLE 21 NUD3124, SZNUD3124 This micro−integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. MARKING DIAGRAMS JW6 MG G JW6 MG G Features • Provides Robust Interface between D.C. Relay Coils and Sensitive • • • • • • Logic Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays Benefits • • • • Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications Drain (3) Gate (1) 100 K ORDERING INFORMATION Package Shipping† NUD3124LT1G SOT−23 (Pb−Free) SZNUD3124LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel 3000 / Tape & Reel NUD3124DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel SZNUD3124DMT1G SC−74 (Pb−Free) 3000 / Tape & Reel Device INTERNAL CIRCUIT DIAGRAMS Drain (6) Drain (3) 10 k 10 k Source (1) CASE 318 © Semiconductor Components Industries, LLC, 2002 Gate (5) 100 K 100 K Source (2) October, 2022 − Rev. 14 JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Gate (2) 10 k JW6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Source (4) CASE 318F 1 Publication Order Number: NUD3124/D NUD3124, SZNUD3124 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 28 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) 150 mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 250 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4) (Suppressed Waveform: Vs = 45 V, RSOURCE = 0.5 W, T = 200 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 80 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V 2,000 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current square pulse 1.0 ms duration. 2. For different square pulse durations, see Figure 2. 3. Nonrepetitive load dump suppressed pulse per Figure 3. 4. For relay’s coils/inductive loads higher than 80 W, see Figure 4. THERMAL CHARACTERISTICS Symbol Rating Value Unit TA Operating Ambient Temperature −40 to 125 °C TJ Maximum Junction Temperature 150 °C −65 to 150 °C TSTG Storage Temperature Range PD Total Power Dissipation (Note 5) Derating above 25°C SOT−23 225 1.8 mW mW/°C PD Total Power Dissipation (Note 5) Derating above 25°C SC−74 380 3.0 mW mW/°C SOT−23 SC−74 556 329 °C/W RqJA Thermal Resistance Junction–to–Ambient (Note 5) 5. Mounted onto minimum pad board. www.onsemi.com 2 NUD3124, SZNUD3124 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Min Typ Max Unit VBRDSS 28 34 38 V − − − − − − − − 0.5 1.0 50 80 − − − − − − − − 60 80 90 110 1.3 1.3 1.8 − 2.0 2.0 − − − − − − − − 1.4 1.7 0.8 1.1 150 140 200 − − − gFS − 500 − mmho Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Ciss − 32 − pf Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Coss − 21 − pf Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Crss − 8.0 − pf tPHL tPLH − − 890 912 − − tPHL tPLH − − 324 1280 − − tf tr − − 2086 708 − − tf tr − − 556 725 − − Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 28 V, VGS = 0 V) (VDS = 28 V, VGS = 0 V, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) IGSS mA mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) VGS(th) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) RDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 125°C) IDS(on) Forward Transconductance (VDS = 12 V, ID = 150 mA) V W mA DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 1, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 1, (VDS = 12 V, VGS = 5.0 V) ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NUD3124, SZNUD3124 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms Ppk, PEAK SURGE POWER (W) 25 20 15 10 5 0 1 10 100 PW, PULSE WIDTH (ms) Figure 2. Maximum Non−repetitive Surge Power versus Pulse Width Load Dump Pulse Not Suppressed: VR = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% TR = 1 − 10 ms ±10% Load Dump Pulse Suppressed: NOTE: Max. Voltage DUT is exposed to is NOTE: approximately 45 V. VS = 30 V ±20% T = 150 ms ±20% TR 90% 10% of Peak; Reference = VR, IR 10% VR, IR Figure 3. Load Dump Waveform Definition www.onsemi.com 4 VS T NUD3124, SZNUD3124 14 IDSS, DRAIN LEAKAGE (mA) 140 VS, LOAD DUMP (VOLTS) 120 100 80 60 40 80 110 140 170 200 230 260 290 VDS = 28 V 8 6 4 2 −25 0 25 50 75 100 RELAY’S COIL (W) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Load Dump Capability versus Relay’s Coil dc Resistance Figure 5. Drain−to−Source Leakage versus Junction Temperature 125 34.8 BVDSS BREAKDOWN VOLTAGE (V) 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 1 −25 0 25 50 100 75 125 34.6 34.4 34.2 ID = 10 mA 34.0 33.8 33.6 33.4 −50 −25 25 0 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Gate−to−Source Leakage versus Junction Temperature Figure 7. Breakdown Voltage versus Junction Temperature 1 VGS = 5 V 0.1 0.01 VGS = 3 V VGS = 2.5 V ID DRAIN CURRENT (A) IGSS GATE LEAKAGE (mA) 10 0 −50 320 350 80 ID DRAIN CURRENT (A) 12 VGS = 2 V 1E−04 125 °C 0.01 0.001 85 °C 1E−04 1E−06 25 °C 1E−05 VGS = 1 V 1E−08 1E−10 0.0 VDS = 0.8 V −40 °C 1E−06 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1E−07 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 8. Output Characteristics Figure 9. Transfer Function www.onsemi.com 5 4.5 5.0 1800 ID = 0.25 A VGS = 3.0 V 1600 1400 1200 ID = 0.15 A VGS = 3.0 V 1000 800 ID = 0.15 A VGS = 5.0 V 600 400 −50 −25 0 25 50 100 75 125 TJ, JUNCTION TEMPERATURE (°C) Figure 10. On Resistance Variation versus Junction Temperature RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) NUD3124, SZNUD3124 0.20 0.18 ID = 250 mA 0.16 0.14 0.12 125 °C 0.10 85 °C 25 °C −40 °C 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 11. On Resistance Variation versus Gate−to−Source Voltage VZ ZENER CLAMP VOLTAGE (V) 36.0 35.5 35.0 34.5 34.0 −40 °C 25 °C 85 °C 33.5 33.0 125 °C 32.5 32.0 0.1 1.0 10 100 1000 IZ, ZENER CURRENT (mA) Figure 12. Zener Clamp Voltage versus Zener Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW t2 PERIOD DUTY CYCLE = t1/t2 SINGLE PULSE 0.1 t1 1.0 10 100 1000 10,000 t1, PULSE WIDTH (ms) Figure 13. Transient Thermal Response for NUD3124LT1G www.onsemi.com 6 100,000 1,000,000 NUD3124, SZNUD3124 APPLICATIONS INFORMATION 12 V Battery − + NC NO Relay, Vibrator, or Inductive Load Drain (3) Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3124 Source (2) Figure 14. Applications Diagram www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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