NUD3160LT1G

NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features http://onsemi.com MARKING DIAGRAMS 3 1 2 SOT−23 CASE 318 STYLE 21 JW8 MG G • Provides Robust Interface between D.C. Relay Coils and Sensitive Logic • Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V • • • • or 48 V Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for Free−Wheeling Diode Meets Load Dump and other Automotive Specs Pb−Free Packages are Available 6 JW8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications • Automotive and Industrial Environment • Drives Window, Latch, Door, and Antenna Relays Benefits 1 SC−74 CASE 318F STYLE 7 JW8 MG G • • • • JW8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NUD3160LT1 NUD3160LT1G NUD3160DMT1 Package SOT−23 SOT−23 (Pb−Free) SC−74 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications SC−74 NUD3160DMT1G (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Drain (3) Drain (6) Drain (3) Gate (1) 10 k 100 k Gate (2) 10 k 100 k 10 k 100 k Gate (5) Source (2) CASE 318 Source (1) Source (4) CASE 318F Figure 1. Internal Circuit Diagrams © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 2 Publication Order Number: NUD3160/D NUD3160 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol VDSS VGSS ID EZ Drain−to−Source Voltage – Continuous (TJ = 125°C) Gate−to−Source Voltage – Continuous (TJ = 125°C) Drain Current – Continuous (TJ = 125°C) Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) Load Dump Pulse, Drain−to−Source (Note 3) RSOURCE = 0.5 W, T = 300 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) Human Body Model (HBM) According to EIA/JESD22/A114 Specification Rating Value 60 12 150 200 Unit V V mA mJ PPK ELD1 20 60 W V ELD2 100 V ELD3 300 V Rev−Bat Dual−Volt ESD −14 28 2000 V V V THERMAL CHARACTERISTICS Symbol TA TJ TSTG PD PD RqJA 1. 2. 3. 4. Operating Ambient Temperature Maximum Junction Temperature Storage Temperature Range Total Power Dissipation (Note 4) Derating above 25°C Total Power Dissipation (Note 4) Derating above 25°C Thermal Resistance Junction–to–Ambient (Note 4) SOT−23 SC−74 SOT−23 SC−74 Rating Value −40 to 125 150 −65 to 150 225 1.8 380 3.0 556 329 Unit °C °C °C mW mW/°C mW mW/°C °C/W Nonrepetitive current square pulse 1.0 ms duration. For different square pulse durations, see Figure 12. Nonrepetitive load dump pulse per Figure 3. Mounted onto minimum pad board. http://onsemi.com 2 NUD3160 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Drain to Source Sustaining Voltage (ID = 10 mA) Drain to Source Leakage Current (VDS = 12 V, VGS = 0 V) (VDS = 12 V, VGS = 0 V, TJ = 125°C) (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125°C) Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 3.0 V, VDS = 0 V, TJ = 125°C) (VGS = 5.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V, TJ = 125°C) ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 125°C) Drain to Source On−Resistance (ID = 150 mA, VGS = 3.0 V) (ID = 150 mA, VGS = 3.0 V, TJ = 125°C) (ID = 150 mA, VGS = 5.0 V) (ID = 150 mA, VGS = 5.0 V, TJ = 125°C) Output Continuous Current (VDS = 0.3 V, VGS = 5.0 V) (VDS = 0.3 V, VGS = 5.0 V, TJ = 125°C) Forward Transconductance (VDS = 12 V, ID = 150 mA) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Output Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) Transfer Capacitance (VDS = 12 V, VGS = 0 V, f = 10 kHz) SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 3.0 V) High to Low Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Low to High Propagation Delay; Figure 2, (VDS = 12 V, VGS = 5.0 V) Transition Times: Fall Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 3.0 V) Fall Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) Rise Time; Figure 2, (VDS = 12 V, VGS = 5.0 V) ns tPHL tPLH tPHL tPLH − − − − 918 798 331 1160 − − − − ns tf tr tf tr − − − − 2290 618 622 600 − − − − Ciss Coss Crss − − − 30 14 6.0 − − − pf pf pf VGS(th) 1.3 1.3 RDS(on) − − − − IDS(on) 150 100 gFS − 200 − 400 − − − mmho − − − − 2.4 3.7 1.8 2.9 mA 1.8 − 2.0 2.0 W V VBRDSS IDSS − − − − IGSS − − − − − − − − 60 80 90 110 − − − − 0.5 1.0 50 80 mA 61 66 70 V mA Symbol Min Typ Max Unit http://onsemi.com 3 NUD3160 TYPICAL WAVEFORMS (TJ = 25°C unless otherwise specified) VIH Vin 50% 0V tPHL 90% Vout 50% 10% VOL tr tPLH VOH tf Figure 2. Switching Waveforms tr Load Dump Pulse Not Suppressed: Vr = 13.5 V Nominal ±10% VS = 60 V Nominal ±10% T = 300 ms Nominal ±10% tr = 1 − 10 ms ±10% 90% 10% of Peak; Reference = Vr, Ir 10% Vr, Ir VS T Figure 3. Load Dump Waveform Definition http://onsemi.com 4 NUD3160 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 80 IDSS, DRAIN LEAKAGE (mA) 70 60 50 40 30 20 10 0 −50 −25 0 25 50 75 100 125 VDS = 60 V IGSS GATE LEAKAGE (mA) 70 60 VGS = 5 V 50 40 VGS = 3 V 30 20 −50 80 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 4. Drain−to−Source Leakage vs. Junction Temperature 66.4 BVDSS BREAKDOWN VOLTAGE (V) ID DRAIN CURRENT (mA) 66.2 66.0 65.8 65.6 65.4 65.2 65.0 64.8 −50 −25 0 25 50 75 100 125 ID = 10 mA 1E+03 Figure 5. Gate−to−Source Leakage vs. Junction Temperature VGS = 5 V 1E+02 1E+01 1E+00 1E−01 1E−02 1E−03 0.0 VGS = 1.5 V VGS = 3 V VGS = 2.5 V VGS = 2 V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) Figure 6. Breakdown Voltage vs. Junction Temperature 1 VDS = 0.8 V ID DRAIN CURRENT (mA) 0.1 0.01 0.001 125 °C Figure 7. Output Characteristics 3200 ID = 0.15 A 2800 2400 2000 1600 1200 800 −50 VGS = 3.0 V 1E−04 1E−05 1E−06 1E−07 1.0 85 °C 25 °C −40 °C VGS = 5.0 V 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 −25 0 25 50 75 100 125 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Transfer Function Figure 9. On Resistance Variation vs Junction Temperature http://onsemi.com 5 NUD3160 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 100 90 80 70 60 50 40 30 20 10 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 −40 °C 85 °C 25 °C 125 °C VZ ZENER CLAMP VOLTAGE (V) ID = 250 mA 68.0 67.5 67.0 66.5 66.0 65.5 65.0 64.5 64.0 63.5 63.0 62.5 62.0 0.1 −40 °C 25 °C 85 °C 125 °C 2.6 2.8 3.0 1.0 10 100 1000 VGS, GATE−TO−SOURCE VOLTAGE (V) IZ, ZENER CURRENT (mA) Figure 10. On Resistance Variation vs. Gate−to−Source Voltage 100 Figure 11. Zener Clamp Voltage vs. Zener Current POWER (WATTS) 10 1 0.1 1.0 10 100 PW, PULSE WIDTH (ms) Figure 12. Maximum Non−repetitive Surge Power vs. Pulse Width http://onsemi.com 6 NUD3160 APPLICATIONS INFORMATION 12 V Battery − + Relay, Vibrator, or Inductive Load Drain (3) NO NC Gate (1) Micro Processor Signal for Relay 10 k 100 K NUD3160 Source (2) Figure 13. Applications Diagram http://onsemi.com 7 NUD3160 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D 3 SEE VIEW C E 1 2 HE c b e q 0.25 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 NUD3160 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE L D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L C STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.074 0.7 0.028 0.95 0.037 0.95 0.037 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MicroIntegration is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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