NUF4220MN
Audio EMI Filter, 4 Line,
with ESD Protection
NUF4220MN is a 4 line LC EMI filter array designed for audio
applications. It offers greater than −30 dB attenuation at frequencies
from 800 MHz to 5.0 GHz, with no line loss. This part is a single chip
solution for audio interface applications, 2 speaker lines with a
microphone line. This device also offers ESD protection−clamping
transients from static discharges and ESD protection is provided
across all capacitors.
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L
8
1
C1
L
Features
• Provides EMI Filtering and ESD Protection
• Integration of 20 Discretes
• Compliance with IEC61000−4−2 (Level 4)
•
•
•
•
•
C1
7
2
C2
C2
L
18 kV (Contact)
DFN8, 2x2 mm Package
Moisture Sensitivity Level 1
ESD Ratings: Machine Model = C
Human Body Model = 3B
Excellent Line Efficiency with Low Line Resistance < 1.1 max
This is a Pb−Free Device*
6
3
C3
C3
L
5
4
C4
C4
(Top View)
MARKING
DIAGRAM
Applications
•
•
•
•
•
•
Headset
MP3s
PDAs
Digital Cameras
Portable DVDs
Handfree Interface
DFN8
CASE 506AA
PLASTIC
1
1 R2 MG
G
4
R2 = Specific Device Code
M = Date Code
G
= Pb−Free Package
1
2
3
4
GND
8
7
6
5
(Bottom View)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 0
1
Device
Package
Shipping†
NUF4220MNT1G
DFN8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NUF4220MN/D
NUF4220MN
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
VPP
18
kV
Steady−State Power per Inductor
PL
90
mW
Steady−State Power per Package
PT
360
mW
ESD Discharge IEC61000−4−2
Contact Discharge
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
Tstg
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Min
Typ
VRWM
IR = 1.0 mA
VBR
VRWM = 3.3 V
IR
Inductance
6.0
7.0
Max
Unit
5.0
V
8.0
V
0.1
A
4.9
L
RS
Capacitance (Note 1, 3)
Cd
205
pF
f3dB
16
MHz
Above this frequency,
appreciable attenuation occurs
1. Measured at 25°C, VR = 0 V, f = 1.0 MHz.
2. 50 source and 50 load termination.
3. Total line capacitance is 2 times the diode capacitance (Cd).
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2
0.85
1.1
Series Resistance
Cut−Off Frequency (Note 2)
0.6
nH
NUF4220MN
TYPICAL PERFORMANCE CURVES
(TA = 25°C unless otherwise specified)
0
0
−5.0
−10
−10
−20
S41 (dB)
S21 (dB)
−15
−20
−25
−30
−40
−50
−30
−60
−35
−70
−40
−80
−45
1.0E+6
10E+6
100E+6
1.0E+9
10E+6
10E+9
100E+6
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss
Characteristics
10E+9
Figure 2. Typical Analog Crosstalk
1.2
1.2
1.0
1.0
RESISTANCE ()
NORMALIZED CAPACITANCE
1.0E+9
FREQUENCY (MHz)
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
−40
0
0
1.0
2.0
3.0
4.0
5.0
REVERSE BIAS VOLTAGE (V)
−15
10
35
60
TEMPERATURE (°C)
Figure 3. Typical Line Capacitance vs.
Reverse Bias Voltage (Normalized to
Capacitance @ 0 V)
Figure 4. Typical Resistance Over Temperature
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3
85
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 2x2, 0.5P
CASE 506AA
ISSUE F
DATE 04 MAY 2016
1
SCALE 4:1
D
PIN ONE
REFERENCE
2X
0.10 C
2X
0.10 C
A
B
L1
ÇÇ
ÇÇ
ÇÇ
DETAIL A
E
OPTIONAL
CONSTRUCTIONS
ÉÉ
ÇÇ
ÉÉ
ÇÇ
EXPOSED Cu
TOP VIEW
A
DETAIL B
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
ÉÉ
ÉÉ
ÇÇ
A3
MOLD CMPD
A1
DETAIL B
0.08 C
(A3)
NOTE 4
SIDE VIEW
DETAIL A
ALTERNATE
CONSTRUCTIONS
A1
C
D2
8X
4
1
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
L
5
8
e/2
e
8X
0.90
b
0.05 C
8X
0.50
2.30
1
0.10 C A B
8X
0.30
NOTE 3
BOTTOM VIEW
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
GENERIC
MARKING DIAGRAM*
1
1.30
PACKAGE
OUTLINE
E2
K
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
2.00 BSC
1.10
1.30
2.00 BSC
0.70
0.90
0.50 BSC
0.30 REF
0.25
0.35
−−−
0.10
XXMG
G
XX = Specific Device Code
M = Date Code
G
= Pb−Free Device
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON18658D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFN8, 2.0X2.0, 0.5MM PITCH
PAGE 1 OF 1
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