NUP1128WTT1G

NUP1128, NUP2128 Single Line LIN & Dual Line CAN Bus Protector The NUP1128/NUP2128 are designed to protect both CAN and LIN transceivers from ESD and other harmful transient voltage events. These devices provide bidirectional protection for each data line with a single compact SC−70 (SOT−323) or SOD−323 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. www.onsemi.com MARKING DIAGRAMS Features SC−70 CASE 419 • Low Reverse Leakage Current (< 100 nA) • 175°C TJ(max) − Rated for High Temperature, Mission Critical • • • • • • Applications IEC Compatibility: IEC 61000−4−2 (ESD): Level 4 IEC 61000−4−4 (EFT): 50 A (5/50 ns) IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns) Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 2 XX M G ♦ ♦ XX M = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN 1 PIN 3 NUP1128 (SC−70) PIN 1 PIN 2 NUP1128 (SOD−323) • Automotive Networks ♦ SOD−323 CASE 477 1 Applications ♦ XX MG G CAN / CAN−FD Low and High−Speed CAN Fault Tolerant CAN LIN PIN 1 PIN 3 PIN 2 NUP2128 CAN_H / Single Wire LIN CAN / LIN Transceiver CAN_L NUP1128 CAN / LIN NUP2128 ORDERING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2017 March, 2019 − Rev. 0 1 Publication Order Number: NUP1128/D NUP1128, NUP2128 MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Peak Power Dissipation, 8/20 ms Double Exponential Waveform (Note 1) Value Unit 165 W TJ Operating Junction Temperature Range NUP1128HT1G, SZNUP1128HT1G All other devices −55 to 150 −55 to 175 TJ Storage Temperature Range NUP1128HT1G, SZNUP1128HT1G All other devices −55 to 150 −55 to 175 TL Lead Solder Temperature (10 s) 260 °C Human Body Model (HBM) IEC 61000−4−2 Contact IEC 61000−4−2 Air ISO 10605 Contact (330 pF / 330 W) ISO 10605 Contact (330 pF / 2 kW) ISO 10605 Contact (150 pF / 2 kW) 8.0 ±30 ±30 ±30 ±30 ±30 kV kV kV kV kV kV ESD °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Min Typ Max Unit 26.5 V 31 35.5 V Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 26.5 V TA = 150°C 1 150 100 750 nA VC Clamping Voltage IPP = 1 A (8/20 ms Waveform) (Note 4) IPP = 3 A 39 46 47 55 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) DC Diode Capacitance Matching VR = 0 V, f = 1 MHz (Note 5) VBR 27.5 3.0 A 11 13 pF 2 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics table. www.onsemi.com 2 NUP1128, NUP2128 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.E−02 12 1.E−03 10 1.E−04 1.E−05 8 C (pF) I (A) 1.E−06 1.E−07 1.E−08 6 4 1.E−09 1.E−10 2 1.E−11 1.E−12 −40 −30 −20 −10 0 V (V) 10 30 20 0 −30 −25 −20 −15 −10 −5 5 0 VBias (V) 40 Figure 1. IV Characteristics 25 +55°C +85°C 20 15 10 +150°C 5 0 1E−12 1E−11 1E−10 1E−09 1E−08 IL, LEAKAGE CURRENT (A) 1E−07 30 20 40 60 80 100 −60 −40 −20 1E−06 0 20 40 60 80 100 120 140 160 180 TEMPERATURE (°C) Figure 4. Temperature Power Dissipation Derating Figure 3. IR vs Temperature Characteristics 60 110 WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 100 90 80 c−t 70 50 VCLAMP, (V) % OF PEAK PULSE CURRENT 20 25 0 +25°C −55°C 15 Figure 2. CV Characteristics PERCENT DERATING (%) VR, REVERSE BIAS VOLTAGE (V) 30 10 60 td = IPP/2 50 40 30 20 40 IO−GND 30 20 10 10 0 0 5 10 15 20 25 0 30 0 1 2 3 IPP (A) t, TIME (ms) Figure 6. Clamping Voltage vs Peak Pulse Current (8/20 ms) Figure 5. Pulse Waveform (8/20 ms) www.onsemi.com 3 4 180 20 160 0 140 −20 120 −40 VOLTAGE (V) VOLTAGE (V) NUP1128, NUP2128 100 80 60 40 −60 −80 −100 −120 20 −140 0 −160 −20 −20 0 20 40 60 80 TIME (ns) 100 120 140 −180 −20 Figure 7. IEC61000−4−2 +8 kV Contact ESD Clamping Voltage 0 20 40 60 80 TIME (ns) 100 120 Figure 8. IEC61000−4−2 −8 kV Contact ESD Clamping Voltage www.onsemi.com 4 140 NUP1128, NUP2128 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 9. IEC61000−4−2 Spec Device ESD Gun Under Oscilloscope Test 50 W 50 W Cable Figure 10. Diagram of ESD Clamping Voltage Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger www.onsemi.com 5 NUP1128, NUP2128 20 10 18 14 −14 6 12 10 6 −12 −10 4 8 6 2 4 4 −8 −6 −4 2 −2 2 NOTE: 8 −16 EQUIVALENT VIEC (kV) TLP CURRENT (A) TLP CURRENT (A) 8 EQUIVALENT VIEC (kV) −18 16 0 0 10 −20 10 20 30 40 0 0 0 50 10 20 30 40 VOLTAGE (V) VOLTAGE (V) Figure 11. Positive TLP IV Curve Figure 12. Negative TLP IV Curve 0 50 TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns. Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 13. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 14 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. 50 W Coax Cable S Attenuator ÷ 50 W Coax Cable 10 MW IM VM DUT VC Oscilloscope Figure 13. Simplified Schematic of a Typical TLP System Figure 14. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 6 NUP1128, NUP2128 ORDERING INFORMATION Device NUP1128WTT1G SZNUP1128WTT1G* NUP2128WTT1G SZNUP2128WTT1G* NUPH1128HT1G (In Development**) SZNUPH1128HT1G* (In Development**) NUP1128HT1G SZNUP1128HT1G* Marking Package Operating Junction Temperature Range Shipping† 7X SC−70 (Pb−Free) 7U 3000 / Tape & Reel −55 to 175°C TBD SOD−323 (Pb−Free) 7A 3000 / Tape & Reel −55 to 150°C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **Product release in Q3 2019. www.onsemi.com 7 NUP1128, NUP2128 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 c A2 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 NUP1128, NUP2128 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 L MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 A1 NOTE 5 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. 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