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NUP3105LT3G

NUP3105LT3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-23

  • 描述:

    TVSDIODE32VWM66VCSOT23

  • 数据手册
  • 价格&库存
NUP3105LT3G 数据手册
NUP3105L, SZNUP3105L ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP3105L has been designed to protect the CAN transceiver in 24 V systems from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • 350 W Peak Power Dissipation per Line (8/20 msec Waveform) Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed CAN Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms) Flammability Rating UL 94 V−0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER SOT−23 CASE 318 STYLE 27 PIN 1 PIN 3 PIN 2 CAN_H Applications CAN Transceiver • Industrial Control Networks Smart Distribution Systems (SDS®) ♦ DeviceNet™ Automotive Networks ♦ Low and High−Speed CAN ♦ Fault Tolerant CAN ♦ Trucks ♦ • www.onsemi.com CAN Bus CAN_L NUP3105L MARKING DIAGRAM 27F MG G 1 27F M G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October, 2017 − Rev. 4 1 Publication Order Number: NUP3105L/D NUP3105L, SZNUP3105L MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 8.0 400 30 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Min Typ Max Unit − − 32 V 35.6 − − V Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 32 V − − 100 nA VC Clamping Voltage IPP = 5 A (8/20 ms Waveform) (Note 4) − − 59 V VC Clamping Voltage IPP = 8 A (8/20 ms Waveform) (Note 4) − − 66 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 30 pF VBR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 100 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 12.0 110 60 td = IPP/2 50 40 30 20 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 8.0 6.0 4.0 10 0 0 5 10 15 20 25 2.0 30 45 50 55 60 65 70 VC, CLAMPING VOLTAGE (V) t, TIME (ms) Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8/20 ms www.onsemi.com 2 NUP3105L, SZNUP3105L Surge Protection Diode Protection Circuit breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. Surge protection diodes provide protection to a transceiver by clamping a surge voltage to a safe level. surge protection diodes have high impedance below and low impedance above their breakdown voltage. A surge protection Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 3 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener surge protection diodes. The clamping voltage of the composite device is equal to the CAN_H CAN Transceiver CAN_L CAN Bus NUP3105L Figure 3. High−Speed and Fault Tolerant CAN Surge Protection Circuit ORDERING INFORMATION Package Shipping† NUP3105LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SZNUP3105LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel NUP3105LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SZNUP3105LT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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