NUP4302MR6_06

NUP4302MR6 Schottky Diode Array for Four Data Line ESD Protection The NUP4302MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features http://onsemi.com PIN CONFIGURATION AND SCHEMATIC I/O 1 GND 2 1/O 3 6 I/O 5 VCC 4 I/O • • • • • • • • • • • Very Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model IEC 61000−4−2 Level 4 ESD Protection Flammability Rating: UL 94 V−0 Pb−Free Package is Available Applications Ultra High−Speed Switching USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) Monitors and Flat Panel Displays MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 12 M 67 M G G 1 67 G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NUP4302MR6T1 NUP4302MR6T1G Package TSOP−6 TSOP−6 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Publication Order Number: NUP4302MR6/D NUP4302MR6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Reverse Breakdown Voltage Forward Power Dissipation (TA = 25°C) Forward Continuous Current Junction Operating Temperature Storage Temperature Range Symbol VBR PF IF TJ Tstg Value 30 225 200 −55 to +125 −55 to +150 Unit V mW mA °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Reverse Breakdown Voltage Reverse Leakage Forward Voltage Forward Voltage Forward Voltage Forward Voltage Total Capacitance Reverse Recovery Time Symbol VBR IR VF VF VF VF CT trr IR = 100 mA VR = 25 V IF = 0.1 mAdc IF = 1.0 mAdc IF = 10 mAdc IF = 100 mAdc VR = 0 V, f = 1.0 MHz, I/O to Ground VR = 0 V, f = 1.0 MHz, I/O to I/O IF = IR = 10 mA, IR(REC) = 1.0 mA (Figure 1) Conditions Min 30 30 0.28 0.35 0.45 1.00 28 18 5.0 Typ Max Unit V mA V V V V pF ns 820 W +10 V 2k 100 mH 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE IF 0.1 mF tr tp 10% t IF trr t 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 NUP4302MR6 1000 IF, FORWARD CURRENT (mA) TA = 1 25°C 85°C 100 25°C 10 10,000 IR, REVERSE CURRENT (mA) TA = 1 25°C 1000 85°C 100 10 1 0.1 25°C 1 0 0.2 0.4 0.6 0.8 1.0 0 5 VF, FORWARD VOLTAGE (VOLTS) 25 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 2. Forward Current as a Function of Forward Voltage; Typical Values Figure 3. Reverse Current as a Function of Reverse Voltage; Typical Values 40 CD, DIODE CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 f = 1 MHz TA = 25°C VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance as a Function of Reverse Voltage; Typical Values http://onsemi.com 3 NUP4302MR6 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A SOLDERING FOOTPRINT* 2.4 0.094 STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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