NUR30QW5T1

NUR30Q Quad Schottky Barrier Diodes Array These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features: http://onsemi.com • Very Low Forward Voltage • Guard Ring Protected • Ultra Small SMD Package Typical Applications: 30 VOLT QUAD SCHOTTKY DIODES ARRAY • Ultra High−Speed Switching • Low Current Rectification • Low Power Consumption Applications (e.g. Hand−Held Devices) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Symbol VR PF 385 3.1 IF TJ 200 125 mW mW/°C mA °C 5 Value 30 Unit Volts 1 2 3 5 4 MARKING DIAGRAM 4 SC−88A/SOT−353 CASE 419A STYLE 9 1 1 R9 = Device Marking D = One Digit Date Code R9 2 5 D 3 ORDERING INFORMATION Device NUR30QW5T1 Package SC−88A Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 1 November, 2003 − Rev. 1 Publication Order Number: NUR30Q/D NUR30Q ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 10 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 100 mAdc) Forward Voltage (IF = 200 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Symbol CT IR VF VF VF VF VF trr Min − − − − − − − − Typ 10 1.5 0.15 0.21 0.28 0.36 0.41 5.0 Max 20 30 0.19 0.25 0.30 0.41 0.50 − Unit pF mAdc Vdc Vdc Vdc Vdc Vdc ns 820 Ω +10 V 2k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 µF tr tp 10% t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 NUR30Q 1000 IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (mA) 10 TA = 1 25°C 1 85°C 0.1 100 10 TA = 1 25°C 85°C 25°C 0.01 25°C 0.001 1 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.0001 0 5 25 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 2. Forward Current as a Function of Forward Voltage; Typical Values Figure 3. Reverse Current as a Function of Reverse Voltage; Typical Values 20 CD, DIODE CAPACITANCE (pF) 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 f = 1 MHz TA = 25°C VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance as a Function of Reverse Voltage; Typical Values http://onsemi.com 3 NUR30Q PACKAGE DIMENSIONS SC−88A (SOT−353) CASE 419A−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 A G 5 S 1 2 3 −B− D 5 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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