NUS3116MTR2G

NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics. www.onsemi.com MOSFET V(BR)DSS High Performance Power MOSFET Dual−Low Vce(sat) Transistors as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (