NV25160DTHFT3G

NV25080, NV25160, NV25320, NV25640 EEPROM Serial 8/16/32/64-Kb SPI Automotive Grade 0 www.onsemi.com Description NV25080, NV25160, NV25320, NV25640 are a EERPOM Serial 8/16/32/64−Kb SPI Automotive Grade 0 devices internally organized as 1K/2K/4K/8Kx8 bits. It features a 32−byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV25xxx device. The device features software and hardware write protection, including partial as well as full array protection. Byte Level On−Chip ECC (Error Correction Code) makes the device suitable for high reliability applications. The device offers an additional Identification Page which can be permanently write protected. PIN CONFIGURATION CS • • • • • • Automotive AEC−Q100 Grade 0 (−40°C to +150°C) Qualified 2.5 V to 5.5 V Supply Voltage Range 10 MHz SPI Compatible SPI Modes (0,0) & (1,1) 32−byte Page Write Buffer Self−timed Write Cycle Hardware and Software Protection Additional Identification Page with Permanent Write Protection NV Prefix for Automotive and Other Applications Requiring Site and Change Control Block Write Protection − Protect 1/4, 1/2 or Entire EEPROM Array Low Power CMOS Technology Program/Erase Cycles: − 4,000,000 at 25°C − 1,200,000 at +85°C − 600,000 at +125°C − 300,000 at +150°C 200 Year Data Retention SOIC, TSSOP 8−lead Packages This Device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant 1 VCC SO HOLD WP SCK VSS SI Features • • • • • • • • • TSSOP−8 DT SUFFIX CASE 948AL SOIC−8 DW SUFFIX CASE 751BD SOIC (DW), TSSOP (DT) VCC SI CS WP NV25xxx SO HOLD SCK VSS Figure 1. Functional Symbol PIN FUNCTION Pin Name Function CS Chip Select SO Serial Data Output WP Write Protect VSS Ground SI Serial Data Input SCK HOLD VCC Serial Clock Hold Transmission Input Power Supply ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. © Semiconductor Components Industries, LLC, 2017 April, 2019 − Rev. 2 1 Publication Order Number: NV25080/D NV25080, NV25160, NV25320, NV25640 Table 1. ABSOLUTE MAXIMUM RATINGS Ratings Units Operating Temperature Parameters −45 to +150 °C Storage Temperature −65 to +150 °C Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol NEND TDR Parameter Endurance Data Retention Max Units TA ≤ 25°C Test Condition 4,000,000 TA = 85°C 1,200,000 Write Cycles (Note 3) TA = 125°C 600,000 TA = 150°C 300,000 TA = 25°C 200 Year 2. Determined through qualification/characterization. 3. A Write Cycle refers to writing a Byte, a Page, the Status Register or the Identification Page. Table 3. DC OPERATING CHARACTERISTICS (VCC = 2.5 V to 5.5 V, TA = −40°C to +150°C, unless otherwise specified.) Symbol Parameter Test Conditions Read, SO open ICCW ISB1 ISB2 Min fSCK = 10 MHz Max Units 3 mA Supply Current (Write Mode) Write, CS = VCC 2 mA Write, CS = VCC 2 mA Standby Current VIN = GND or VCC, CS = VCC, WP = VCC, HOLD = VCC, VCC = 5.5 V TA = −40°C to +125°C 3 mA TA = −40°C to +150°C 7 mA VIN = GND or VCC, CS = VCC, WP = GND, HOLD = GND, VCC = 5.5 V TA = −40°C to +125°C 5 mA TA = −40°C to +150°C 10 mA Standby Current IL Input Leakage Current VIN = GND or VCC −2 2 mA ILO Output Leakage Current CS = VCC, VOUT = GND or VCC −2 2 mA VIL1 Input Low Voltage −0.5 0.3 VCC V 0.7 VCC VCC + 0.5 V 0.4 V VIH1 Input High Voltage VOL1 Output Low Voltage IOL = 3.0 mA VOH1 Output High Voltage IOH = −1.6 mA VPORth Internal Power−On Reset Threshold VCC −0.8 V 0.6 V 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NV25080, NV25160, NV25320, NV25640 Table 4. PIN CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V) (Note 2) Symbol COUT CIN Test Conditions Output Capacitance (SO) Input Capacitance (CS, SCK, SI, WP, HOLD) Max Unit VOUT = 0 V Min Typ 8 pF VIN = 0 V 8 pF Table 5. AC CHARACTERISTICS (Note 4) VCC . 2.5 V −405C to +1505C Parameter Symbol Min Max Unit 10 MHz fSCK Clock Frequency DC tSU Data Setup Time 10 ns tH Data Hold Time 10 ns tWH SCK High Time 40 ns tWL SCK Low Time 40 ns tLZ HOLD to Output Low Z 25 ns tRI (Note 5) Input Rise Time 2 ms tFI (Note 5) Input Fall Time 2 ms tHD HOLD Setup Time 0 ns tCD HOLD Hold Time 10 ns tV Output Valid from Clock Low 40 ns tHO Output Hold Time tDIS Output Disable Time 20 ns tHZ HOLD to Output High Z 25 ns tCS CS High Time 40 ns tCSS CS Setup Time 30 ns tCSH CS Hold Time 30 ns tCNS CS Inactive Setup Time 30 tCNH CS Inactive Hold Time 30 tWC (Note 6) 0 ns Write Cycle Time 4 ms 4. AC Test Conditions: Input Pulse Voltages: 0.3 VCC to 0.7 VCC at VCC > 2.5 V, 0.2 VCC to 0.8 VCC at VCC < 2.5 V Input rise and fall times: ≤ 10 ns Input and output reference voltages: 0.5 VCC Output load: current source IOL max/IOH max; CL = 30 pF 5. This parameter is tested initially and after a design or process change that affects the parameter. 6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle. Table 6. POWER−UP TIMING (Notes 5, 7) Symbol Parameter Max Unit tPUR Power−up to Read Operation 0.35 ms tPUW Power−up to Write Operation 0.35 ms 7. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. www.onsemi.com 3 NV25080, NV25160, NV25320, NV25640 Pin Description Functional Description SI: The serial data input pin accepts op−codes, addresses and data. In SPI modes (0,0) and (1,1) input data is latched on the rising edge of the SCK clock input. SO: The serial data output pin is used to transfer data out of the device. In SPI modes (0,0) and (1,1) data is shifted out on the falling edge of the SCK clock. SCK: The serial clock input pin accepts the clock provided by the host and used for synchronizing communication between host and NV25xxx. CS: The chip select input pin is used to enable/disable the NV25xxx. When CS is high, the SO output is tri−stated (high impedance) and the device is in Standby Mode (unless an internal write operation is in progress). Every communication session between host and NV25xxx must be preceded by a high to low transition and concluded with a low to high transition of the CS input. WP: The write protect input pin will allow all write operations to the device when held high. When WP pin is tied low and the WPEN bit in the Status Register (refer to Status Register description, later in this Data Sheet) is set to “1”, writing to the Status Register is disabled. HOLD: The HOLD input pin is used to pause transmission between host and NV25xxx, without having to retransmit the entire sequence at a later time. To pause, HOLD must be taken low and to resume it must be taken back high, with the SCK input low during both transitions. When not used for pausing, the HOLD input should be tied to VCC, either directly or through a resistor. The NV25xxx device supports the Serial Peripheral Interface (SPI) bus protocol, modes (0,0) and (1,1). The device contains an 8−bit instruction register. The instruction set and associated op−codes are listed in Table 7. Reading data stored in the NV25xxx is accomplished by simply providing the READ command and an address. Writing to the NV25xxx, in addition to a WRITE command, address and data, also requires enabling the device for writing by first setting certain bits in a Status Register, as will be explained later. After a high to low transition on the CS input pin, the NV25xxx will accept any one of the six instruction op−codes listed in Table 7 and will ignore all other possible 8−bit combinations. The communication protocol follows the timing from Figure 2. The NV25xxx features an additional Identification Page (32 bytes) which can be accessed for Read and Write operations when the IPL bit from the Status Register is set to “1”. The user can also choose to make the Identification Page permanent write protected. Table 7. INSTRUCTION SET Instruction Op−code Operation WREN 0000 0110 Enable Write Operations WRDI 0000 0100 Disable Write Operations RDSR 0000 0101 Read Status Register WRSR 0000 0001 Write Status Register READ 0000 0011 Read Data from Memory WRITE 0000 0010 Write Data to Memory tCS CS tCSS tCNH tWH tWL tCNS tCSH SCK tSU tH tRI tFI VALID IN SI tV tV tDIS tHO SO HI−Z VALID OUT Figure 2. Synchronous Data Timing www.onsemi.com 4 HI−Z NV25080, NV25160, NV25320, NV25640 Status Register The Status Register, as shown in Table 8, contains a number of status and control bits. The RDY (Ready) bit indicates whether the device is busy with a write operation. This bit is automatically set to 1 during an internal write cycle, and reset to 0 when the device is ready to accept commands. For the host, this bit is read only. The WEL (Write Enable Latch) bit is set/reset by the WREN/WRDI commands. When set to 1, the device is in a Write Enable state and when set to 0, the device is in a Write Disable state. The BP0 and BP1 (Block Protect) bits determine which blocks are currently write protected. They are set by the user with the WRSR command and are non−volatile. The user is allowed to protect a quarter, one half or the entire memory, by setting these bits according to Table 9. The protected blocks then become read−only. The WPEN (Write Protect Enable) bit acts as an enable for the WP pin. Hardware write protection is enabled when the WP pin is low and the WPEN bit is 1. This condition prevents writing to the status register and to the block protected sections of memory. While hardware write protection is active, only the non−block protected memory can be written. Hardware write protection is disabled when the WP pin is high or the WPEN bit is 0. The WPEN bit, WP pin and WEL bit combine to either permit or inhibit Write operations, as detailed in Table 10. The IPL (Identification Page Latch) bit determines whether the additional Identification Page (IPL = 1) or main memory array (IPL = 0) can be accessed both for Read and Write operations. The IPL bit is set by the user with the WRSR command and is volatile. The IPL bit is automatically reset after read/write operations. The LIP (Lock Identification Page) bit is set by the user with the WRSR command and is non−volatile. When set to 1, the Identification Page is permanently write protected (locked in Read−only mode). Note: The IPL and LIP bits cannot be set to 1 using the same WRSR instruction. If the user attempts to set (“1”) both the IPL and LIP bit in the same time, these bits cannot be written and therefore they will remain unchanged. Table 8. STATUS REGISTER 7 6 5 4 3 2 1 0 WPEN IPL 0 LIP BP1 BP0 WEL RDY Table 9. BLOCK PROTECTION BITS Status Register Bits BP1 BP0 Array Address Protected Protection 0 0 None No Protection 0 1 NV25080: 0300−03FF, NV25160: 0600−07FF, NV25320: 0C00−0FFF, NV25640: 1800−1FFF Quarter Array Protection 1 0 NV25080: 0200−03FF, NV25160: 0400−07FF, NV25320: 0800−0FFF, NV25640: 1000−1FFF Half Array Protection 1 1 NV25080: 0000−03FF, NV25160: 0000−07FF, NV25320: 0000−0FFF, NV25640: 0000−1FFF Full Array Protection Table 10. WRITE PROTECT CONDITIONS WPEN WP WEL Protected Blocks Unprotected Blocks Status Register 0 X 0 Protected Protected Protected 0 X 1 Protected Writable Writable 1 Low 0 Protected Protected Protected 1 Low 1 Protected Writable Protected X High 0 Protected Protected Protected X High 1 Protected Writable Writable www.onsemi.com 5 NV25080, NV25160, NV25320, NV25640 WRITE OPERATIONS Write Enable and Write Disable The NV25xxx device powers up into a write disable state. The device contains a Write Enable Latch (WEL) which must be set before attempting to write to the memory array or to the status register. In addition, the address of the memory location(s) to be written must be outside the protected area, as defined by BP0 and BP1 bits from the status register. The internal Write Enable Latch and the corresponding Status Register WEL bit are set by sending the WREN instruction to the NV25xxx. Care must be taken to take the CS input high after the WREN instruction, as otherwise the Write Enable Latch will not be properly set. WREN timing is illustrated in Figure 3. The WREN instruction must be sent prior to any WRITE or WRSR instruction. The internal write enable latch is reset by sending the WRDI instruction as shown in Figure 4. Disabling write operations by resetting the WEL bit, will protect the device against inadvertent writes. CS SCK SI SO 0 0 0 0 0 1 1 0 HIGH IMPEDANCE Dashed Line = mode (1, 1) Figure 3. WREN Timing CS SCK SI SO 0 0 0 0 0 1 0 HIGH IMPEDANCE Dashed Line = mode (1, 1) Figure 4. WRDI Timing www.onsemi.com 6 0 NV25080, NV25160, NV25320, NV25640 Byte Write page, thus possibly overwriting previously loaded data. Following completion of the write cycle, the NV25xxx is automatically returned to the write disable state. Once the WEL bit is set, the user may execute a write sequence, by sending a WRITE instruction, a 16−bit address and data as shown in Figure 5. Only 13 significant address bits are used by the NV25xxx. The rest are don’t care bits, as shown in Table 11. Internal programming will start after the low to high CS transition. During an internal write cycle, all commands, except for RDSR (Read Status Register) will be ignored. The RDY bit will indicate if the internal write cycle is in progress (RDY high), or the device is ready to accept commands (RDY low). Write Identification Page The additional 32−byte Identification Page (IP) can be written with user data using the same Write commands sequence as used for Page Write to the main memory array (Figure 6). The IPL bit from the Status Register must be set (IPL = 1) using the WRSR instruction, before attempting to write to the IP. The address bits [A15:A5] are Don’t Care and the [A4:A0] bits define the byte address within the Identification Page. In addition, the Byte Address must point to a location outside the protected area defined by the BP1, BP0 bits from the Status Register. When the full memory array is write protected (BP1, BP0 = 1,1), the write instruction to the IP is not accepted and not executed. Also, the write to the IP is not accepted if the LIP bit from the Status Register is set to 1 (the page is locked in Read−only mode). Page Write After sending the first data byte to the NV25xxx, the host may continue sending data, up to a total of 32 bytes, according to timing shown in Figure 6. After each data byte, the lower order address bits are automatically incremented, while the higher order address bits (page address) remain unchanged. If during this process the end of page is exceeded, then loading will “roll over” to the first byte in the Table 11. BYTE ADDRESS Address Significant Bits Address Don’t Care Bits # Address Clock Pulses A12 − A0 A15 − A13 16 NV25320 A11 − A0 A15 − A12 16 NV25160 A10 − A0 A15 − A11 16 NV25080 A9 − A0 A15 − A10 16 Identification Page A4 − A0 A15 − A5 16 NV25640 CS 0 1 2 3 4 5 6 7 8 21 22 23 24 25 26 27 28 29 30 31 SCK OPCODE SI SO 0 0 0 0 0 0 DATA IN BYTE ADDRESS* 1 0 A0 D7 D6 D5 D4 D3 D2 D1 D0 AN HIGH IMPEDANCE * Please check the Byte Address Table (Table 11) Dashed Line = mode (1, 1) Figure 5. Byte WRITE Timing www.onsemi.com 7 NV25080, NV25160, NV25320, NV25640 CS 0 1 2 3 4 5 6 7 8 21 23 24−31 32−39 24+(N−1)x8−1 .. 24+(N−1)x8 24+Nx8−1 22 SCK BYTE ADDRESS* OPCODE SI 0 0 0 0 0 0 1 0 AN Data Byte N DATA IN A0 7..1 Data Data Data Byte 1 Byte 2 Byte 3 HIGH IMPEDANCE SO Dashed Line = mode (1, 1) 0 * Please check the Byte Address Table (Table 11) Figure 6. Page WRITE Timing Write Status Register Write Protection The Status Register is written by sending a WRSR instruction according to timing shown in Figure 7. Only bits 2, 3, 4, 6 and 7 can be written using the WRSR command. The Write Protect (WP) pin can be used to protect the Block Protect bits BP0 and BP1 against being inadvertently altered. When WP is low and the WPEN bit is set to “1”, write operations to the Status Register are inhibited. WP going low while CS is still low will interrupt a write to the status register. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation to the Status Register. The WP pin function is blocked when the WPEN bit is set to “0”. CS 0 1 2 3 4 5 6 7 8 9 10 11 1 7 6 5 4 12 13 14 15 2 1 0 SCK OPCODE SI 0 0 0 0 0 DATA IN 0 0 MSB SO HIGH IMPEDANCE Dashed Line = mode (1, 1) Figure 7. WRSR Timing www.onsemi.com 8 3 NV25080, NV25160, NV25320, NV25640 READ OPERATIONS Read from Memory Array internal write cycle is in progress, the RDSR command will output the full content of the status register. For easy detection of the internal write cycle completion, we recommend sampling the RDY bit only through the polling routine. After detecting the RDY bit “0”, the next RDSR instruction will always output the expected content of the status register. To read from memory, the host sends a READ instruction followed by a 16−bit address (see Table 11 for the number of significant address bits). After receiving the last address bit, the NV25xxx will respond by shifting out data on the SO pin (as shown in Figure 8). Sequentially stored data can be read out by simply continuing to run the clock. The internal address pointer is automatically incremented to the next higher address as data is shifted out. After reaching the highest memory address, the address counter “rolls over” to the lowest memory address, and the read cycle can be continued indefinitely. The read operation is terminated by taking CS high. Read Identification Page Reading the additional 32−byte Identification Page (IP) is achieved using the same Read command sequence as used for Read from main memory array (Figure 8). The IPL bit from the Status Register must be set (IPL = 1) before attempting to read from the IP. The [A4:A0] are the address significant bits that point to the data byte shifted out on the SO pin. If the CS continues to be held low, the internal address register defined by [A4:A0] bits is automatically incremented and the next data byte from the IP is shifted out. The byte address must not exceed the 32−byte page boundary. Read Status Register To read the status register, the host simply sends a RDSR command. After receiving the last bit of the command, the NV25xxx will shift out the contents of the status register on the SO pin (Figure 9). The status register may be read at any time, including during an internal write cycle. While the CS 0 1 2 3 4 5 6 7 8 20 21 10 9 22 23 24 25 26 27 28 29 30 SCK OPCODE SI 0 0 0 0 0 0 BYTE ADDRESS* 1 1 A0 AN DATA OUT HIGH IMPEDANCE SO 7 Dashed Line = mode (1, 1) * Please check the Byte Address Table (Table 11) 6 5 4 3 2 1 0 MSB Figure 8. READ Timing CS 0 1 2 3 4 5 6 7 1 0 1 8 9 10 11 7 6 5 4 12 13 14 2 1 SCK OPCODE SI SO 0 0 0 0 0 DATA OUT HIGH IMPEDANCE MSB Dashed Line = mode (1, 1) Figure 9. RDSR Timing www.onsemi.com 9 3 0 NV25080, NV25160, NV25320, NV25640 Hold Operation below the POR trigger level. This bi−directional POR behavior protects the device against ‘brown−out’ failure following a temporary loss of power. The NV25xxx device powers up in a write disable state and in a low power standby mode. A WREN instruction must be issued prior to any writes to the device. After power up, the CS pin must be brought low to enter a ready state and receive an instruction. After a successful byte/page write or status register write, the device goes into a write disable mode. The CS input must be set high after the proper number of clock cycles to start the internal write cycle. Access to the memory array during an internal write cycle is ignored and programming is continued. Any invalid op−code will be ignored and the serial output pin (SO) will remain in the high impedance state. The HOLD input can be used to pause communication between host and NV25xxx. To pause, HOLD must be taken low while SCK is low (Figure 10). During the hold condition the device must remain selected (CS low). During the pause, the data output pin (SO) is tri−stated (high impedance) and SI transitions are ignored. To resume communication, HOLD must be taken high while SCK is low. Design Considerations The NV25xxx device incorporates Power−On Reset (POR) circuitry which protects the internal logic against powering up in the wrong state. The device will power up into Standby mode after VCC exceeds the POR trigger level and will power down into Reset mode when VCC drops CS tCD tCD SCK tHD tHD HOLD tHZ HIGH IMPEDANCE SO tLZ Dashed Line = mode (1, 1) Figure 10. HOLD Timing Error Correction Code The NV25xxx incorporates on−board Error Correction Code (ECC) circuitry, which makes it possible to detect and correct one faulty bit in a byte. ECC improves data reliability by correcting random single bit failures that might occur over the life of the device. www.onsemi.com 10 NV25080, NV25160, NV25320, NV25640 Table 12. ORDERING INFORMATION (Notes 8, 9) OPN Density Automotive Grade Package Type Shipping† NV25080DTHFT3G 8 kb Grade 0 (−40°C to +150°C) TSSOP−8 (Pb−Free) 3000 / Tape & Reel NV25080DWHFT3G 8 kb Grade 0 (−40°C to +150°C) SOIC−8 (Pb−Free) 3000 / Tape & Reel NV25160DTHFT3G 16 kb Grade 0 (−40°C to +150°C) TSSOP−8 (Pb−Free) 3000 / Tape & Reel NV25160DWHFT3G 16 kb Grade 0 (−40°C to +150°C) SOIC−8 (Pb−Free) 3000 / Tape & Reel NV25320DTHFT3G 32 kb Grade 0 (−40°C to +150°C) TSSOP−8 (Pb−Free) 3,000 / Tape & Reel NV25320DWHFT3G 32 kb Grade 0 (−40°C to +150°C) SOIC−8 (Pb−Free) 3,000 / Tape & Reel NV25640DTHFT3G 64 kb Grade 0 (−40°C to +150°C) TSSOP−8 (Pb−Free) 3,000 / Tape & Reel NV25640DWHFT3G 64 kb Grade 0 (−40°C to +150°C) SOIC−8 (Pb−Free) 3,000 / Tape & Reel 8. All packages are RoHS−compliant (Pb−Free, Halogen−free). 9. The standard lead finish is NiPdAu. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Product under development. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC 8, 150 mils CASE 751BD−01 ISSUE O E1 DATE 19 DEC 2008 E SYMBOL MIN A 1.35 1.75 A1 0.10 0.25 b 0.33 0.51 c 0.19 0.25 D 4.80 5.00 E 5.80 6.20 E1 3.80 4.00 MAX 1.27 BSC e PIN # 1 IDENTIFICATION NOM h 0.25 0.50 L 0.40 1.27 θ 0º 8º TOP VIEW D h A1 A θ c e b SIDE VIEW L END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MS-012. DOCUMENT NUMBER: DESCRIPTION: 98AON34272E SOIC 8, 150 MILS Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP8, 4.4x3 CASE 948AL−01 ISSUE O DATE 19 DEC 2008 b SYMBOL MIN NOM A E1 E MAX 1.20 A1 0.05 0.15 A2 0.80 b 0.19 0.30 c 0.09 0.20 D 2.90 3.00 3.10 E 6.30 6.40 6.50 E1 4.30 4.40 4.50 0.90 e 0.65 BSC L 1.00 REF L1 0.50 θ 0º 0.60 1.05 0.75 8º e TOP VIEW D A2 A A1 SIDE VIEW c q1 L1 L END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-153. DOCUMENT NUMBER: DESCRIPTION: 98AON34428E TSSOP8, 4.4X3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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