EEPROM Serial 256-Kb SPI
Automotive Grade 1
inWettable Flank UDFN8
Package
NV25256MUW
www.onsemi.com
Description
The NV25256 is a EEPROM Serial 256−Kb SPI Automotive
Grade 1 device internally organized as 32Kx8 bits. This features a
64−byte page write buffer and supports the Serial Peripheral Interface
(SPI) protocol. The device is enabled through a Chip Select (CS)
input. In addition, the required bus signals are clock input (SCK), data
input (SI) and data output (SO) lines. The HOLD input may be used to
pause any serial communication with the NV25256 device. The device
features software and hardware write protection, including partial as
well as full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.
1
UDFN8
(Wettable Flank)
MUW3 SUFFIX
CASE 517DH
PIN CONFIGURATIONS
CS
SO
WP
VSS
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified
10 MHz (5 V) SPI Compatible
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
64−byte Page Write Buffer
Additional Identification Page with Permanent Write Protection
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection
− Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
8−pad Wettable Flank UDFN 2x3 mm Package
This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
VCC
HOLD
1
SCK
SI
UDFN8 (MUW3)
(Top View)
PIN FUNCTION
Pin Name
Function
CS
Chip Select
SO
Serial Data Output
WP
Write Protect
VSS
Ground
SI
Serial Data Input
SCK
HOLD
VCC
Serial Clock
Hold Transmission Input
Power Supply
VCC
ORDERING INFORMATION
SI
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
CS
NV25256MUW
WP
SO
HOLD
SCK
VSS
Figure 1. Functional Symbol
© Semiconductor Components Industries, LLC, 2020
July, 2020 − Rev. 2
1
Publication Order Number:
NV25256MUW/D
NV25256MUW
DEVICE MARKING
(UDFN8)
S8W
AWLYWG
G
S8W= Specific Device Code
A
= Assembly Location
WL = Wafer Lot Number
YW = Assembly Start Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
NEND (Notes 3, 4)
TDR
Parameter
Endurance
Data Retention
Min
Units
1,000,000
Program / Erase Cycles
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current (Read Mode)
Read, SO open, fSCK = 10 MHz
2
mA
ICCW
Supply Current (Write Mode)
Write, CS = VCC
2
mA
ISB1
Standby Current
VIN = GND or VCC, CS = VCC,
WP = VCC, VCC = 5.5 V
3
mA
ISB2
Standby Current
VIN = GND or VCC, CS = VCC,
WP = GND, VCC = 5.5 V
5
mA
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
IL
Output Leakage Current
CS = VCC VOUT = GND or VCC
−2
2
mA
VIL
Input Low Voltage
−0.5
0.3 VCC
V
VIH
Input High Voltage
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 3.0 mA
0.4
V
VOH
Output High Voltage
IOH = −1.6 mA
VCC − 0.8 V
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2
V
NV25256MUW
Table 4. PIN CAPACITANCE (Note 5) (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V)
Test
Symbol
COUT
CIN
Conditions
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Min
Typ
Max
Units
VOUT = 0 V
8
pF
VIN = 0 V
8
pF
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
Table 5. A.C. CHARACTERISTICS (VCC = 1.8 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) (Note 6)
VCC = 1.8 V to 5.5 V
Parameter
Symbol
VCC = 2.5 V to 5.5 V
Min
Max
Min
Max
Units
5
DC
10
MHz
fSCK
Clock Frequency
DC
tSU
Data Setup Time
20
10
ns
tH
Data Hold Time
20
10
ns
tWH
SCK High Time
75
40
ns
tWL
SCK Low Time
75
40
ns
tLZ
HOLD to Output Low Z
50
25
ns
tRI (Note 7)
Input Rise Time
2
2
ms
tFI (Note 7)
Input Fall Time
2
2
ms
tHD
HOLD Setup Time
0
0
ns
tCD
HOLD Hold Time
10
10
ns
tV
Output Valid from Clock Low
tHO
Output Hold Time
tDIS
Output Disable Time
tHZ
80
0
HOLD to Output High Z
40
0
ns
ns
50
20
ns
100
25
ns
tCS
CS High Time
80
40
ns
tCSS
CS Setup Time
60
30
ns
tCSH
CS Hold Time
60
30
ns
tCNS
CS Inactive Setup Time
60
20
ns
tCNH
CS Inactive Hold Time
60
20
ns
tWPS
WP Setup Time
10
10
ns
tWPH
WP Hold Time
10
tWC (Note 8)
Write Cycle Time
10
ns
5
5
ms
6. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC at VCC = 2.5 V − 5.5 V and 0.25 VCC to 0.75 V VCC = 1.8 V − 2.5 V.
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 30 pF
7. This parameter is tested initially and after a design or process change that affects the parameter.
8. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Table 6. POWER−UP TIMING (Notes 7, 9)
Symbol
Parameter
Min
Max
Units
tPUR
Power−up to Read Operation
0.1
1
ms
tPUW
Power−up to Write Operation
0.1
1
ms
9. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
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3
NV25256MUW
Pin Description
Functional Description
SI: The serial data input pin accepts op−codes, addresses
and data. In SPI modes (0,0) and (1,1) input data is latched
on the rising edge of the SCK clock input.
SO: The serial data output pin is used to transfer data out of
the device. In SPI modes (0,0) and (1,1) data is shifted out
on the falling edge of the SCK clock.
SCK: The serial clock input pin accepts the clock provided
by the host and used for synchronizing communication
between host and NV25256.
CS: The chip select input pin is used to enable/disable the
NV25256. When CS is high, the SO output is tri−stated (high
impedance) and the device is in Standby Mode (unless an
internal write operation is in progress). Every communication
session between host and NV25256 must be preceded by a
high to low transition and concluded with a low to high
transition of the CS input.
WP: The write protect input pin will allow all write
operations to the device when held high. When WP pin is
tied low and the WPEN bit in the Status Register (refer to
Status Register description, later in this Data Sheet) is set to
“1”, writing to the Status Register is disabled.
HOLD: The HOLD input pin is used to pause transmission
between host and NV25256, without having to retransmit
the entire sequence at a later time. To pause, HOLD must be
taken low and to resume it must be taken back high, with the
SCK input low during both transitions. When not used for
pausing, it is recommended the HOLD input to be tied to
VCC, either directly or through a resistor.
The NV25256 device supports the Serial Peripheral
Interface (SPI) bus protocol, modes (0,0) and (1,1). The
device contains an 8−bit instruction register. The instruction
set and associated op−codes are listed in Table 7.
Reading data stored in the NV25256 is accomplished by
simply providing the READ command and an address.
Writing to the NV25256, in addition to a WRITE command,
address and data, also requires enabling the device for
writing by first setting certain bits in a Status Register, as will
be explained later.
After a high to low transition on the CS input pin, the
NV25256 will accept any one of the six instruction op−codes
listed in Table 7 and will ignore all other possible 8−bit
combinations. The communication protocol follows the
timing from Figure 2.
The NV25256 features an additional Identification Page
(64 bytes) which can be accessed for Read and Write
operations when the IPL bit from the Status Register is set
to “1”. The user can also choose to make the Identification
Page permanent write protected.
Table 7. INSTRUCTION SET
Instruction
Opcode
Operation
WREN
0000 0110
Enable Write Operations
WRDI
0000 0100
Disable Write Operations
RDSR
0000 0101
Read Status Register
WRSR
0000 0001
Write Status Register
READ
0000 0011
Read Data from Memory
WRITE
0000 0010
Write Data to Memory
tCS
CS
tCSS
tCNH
tWH
tWL
tCNS
tCSH
SCK
tSU
tH
tRI
tFI
VALID
IN
SI
tV
tV
tDIS
tHO
SO
HI−Z
VALID
OUT
Figure 2. Synchronous Data Timing
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4
HI−Z
NV25256MUW
Status Register
The Status Register, as shown in Table 8, contains a
number of status and control bits.
The RDY (Ready) bit indicates whether the device is busy
with a write operation. This bit is automatically set to 1 during
an internal write cycle, and reset to 0 when the device is ready
to accept commands. For the host, this bit is read only.
The WEL (Write Enable Latch) bit is set/reset by the
WREN/WRDI commands. When set to 1, the device is in a
Write Enable state and when set to 0, the device is in a Write
Disable state.
The BP0 and BP1 (Block Protect) bits determine which
blocks are currently write protected. They are set by the user
with the WRSR command and are non−volatile. The user is
allowed to protect a quarter, one half or the entire memory,
by setting these bits according to Table 9. The protected
blocks then become read−only.
The WPEN (Write Protect Enable) bit acts as an enable for
the WP pin. Hardware write protection is enabled when the
WP pin is low and the WPEN bit is 1. This condition
prevents writing to the status register and to the block
protected sections of memory. While hardware write
protection is active, only the non−block protected memory
can be written. Hardware write protection is disabled when
the WP pin is high or the WPEN bit is 0. The WPEN bit, WP
pin and WEL bit combine to either permit or inhibit Write
operations, as detailed in Table 10.
The IPL (Identification Page Latch) bit determines
whether the additional Identification Page (IPL = 1) or main
memory array (IPL = 0) can be accessed both for Read and
Write operations. The IPL bit is set by the user with the
WRSR command and is volatile. The IPL bit is
automatically reset after read/write operations.
The LIP bit is set by the user with the WRSR command
and is non−volatile. When set to 1, the Identification Page is
permanently write protected (locked in Read−only mode).
Note: The IPL and LIP bits cannot be set to 1 using the
same WRSR instruction. If the user attempts to set (“1”)
both the IPL and LIP bit in the same time, these bits cannot
be written and therefore they will remain unchanged.
Table 8. STATUS REGISTER
7
6
5
4
3
2
1
0
WPEN
IPL
0
LIP
BP1
BP0
WEL
RDY
Table 9. BLOCK PROTECTION BITS
Status Register Bits
BP1
BP0
Array Address Protected
Protection
0
0
None
No Protection
0
1
6000−7FFF
Quarter Array Protection
1
0
4000−7FFF
Half Array Protection
1
1
0000−7FFF
Full Array Protection
Table 10. WRITE PROTECT CONDITIONS
WPEN
WP
WEL
Protected Blocks
Unprotected Blocks
Status Register
0
X
0
Protected
Protected
Protected
0
X
1
Protected
Writable
Writable
1
Low
0
Protected
Protected
Protected
1
Low
1
Protected
Writable
Protected
X
High
0
Protected
Protected
Protected
X
High
1
Protected
Writable
Writable
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5
NV25256MUW
WRITE OPERATIONS
instruction to the NV25256. Care must be taken to take the
CS input high after the WREN instruction, as otherwise the
Write Enable Latch will not be properly set. WREN timing
is illustrated in Figure 3. The WREN instruction must be
sent prior to any WRITE or WRSR instruction.
The internal write enable latch is reset by sending the
WRDI instruction as shown in Figure 4. Disabling write
operations by resetting the WEL bit, will protect the device
against inadvertent writes.
The NV25256 device powers up into a write disable state.
The device contains a Write Enable Latch (WEL) which
must be set before attempting to write to the memory array
or to the status register. In addition, the address of the
memory location(s) to be written must be outside the
protected area, as defined by BP0 and BP1 bits from the
status register.
Write Enable and Write Disable
The internal Write Enable Latch and the corresponding
Status Register WEL bit are set by sending the WREN
CS
SCK
0
SI
SO
0
0
0
0
1
1
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
Figure 3. WREN Timing
CS
SCK
SI
SO
0
0
0
0
0
1
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
Figure 4. WRDI Timing
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6
0
NV25256MUW
Byte Write
automatically returned to the write disable state. While the
internal write cycle is in progress, the RDSR command will
output the RDY (Ready) bit status only (i.e., data out = FFh).
Once the WEL bit is set, the user may execute a write
sequence, by sending a WRITE instruction, a 16−bit address
and data as shown in Figure 5. Only 15 significant address
bits are used by the NV25256. The 16th address bit is don’t
care, as shown in Table 11. Internal programming will start
after the low to high CS transition. During an internal write
cycle, all commands, except for RDSR (Read Status
Register) will be ignored. The RDY bit will indicate if the
internal write cycle is in progress (RDY high), or the device
is ready to accept commands (RDY low).
Write Identification Page
The additional 64−byte Identification Page (IP) can be
written with user data using the same Write commands
sequence as used for Page Write to the main memory array
(Figure 6). The IPL bit from the Status Register must be set
(IPL = 1) using the WRSR instruction, before attempting
to write to the IP.
The address bits [A15:A6] are Don’t Care and the
[A5:A0] bits define the byte address within the
Identification Page. In addition, the Byte Address must point
to a location outside the protected area defined by the BP1,
BP0 bits from the Status Register. When the full memory
array is write protected (BP1, BP0 = 1,1), the write
instruction to the IP is not accepted and not executed.
Also, the write to the IP is not accepted if the LIP bit from
the Status Register is set to 1 (the page is locked in
Read−only mode).
Page Write
After sending the first data byte to the NV25256, the host
may continue sending data, up to a total of 64 bytes,
according to timing shown in Figure 6. After each data byte,
the lower order address bits are automatically incremented,
while the higher order address bits (page address) remain
unchanged. If during this process the end of page is
exceeded, then loading will “roll over” to the first byte in the
page, thus possibly overwriting previously loaded data.
Following completion of the write cycle, the NV25256 is
Table 11. BYTE ADDRESS
Address Significant Bits
Address Don’t Care Bits
# Address Clock Pulses
Main Memory Array
A14 − A0
A15
16
Identification Page
A5 − A0
A15 − A6
16
CS
0
1
2
3
4
5
6
7
21
8
22 23
24
25
26 27
28
29
30 31
SCK
OPCODE
SI
0
0
0
0
0
0
DATA IN
BYTE ADDRESS*
1
0
A0 D7 D6 D5 D4 D3 D2 D1 D0
AN
HIGH IMPEDANCE
SO
* Please check the Byte Address Table (Table 11)
Dashed Line = mode (1, 1)
Figure 5. Byte WRITE Timing
CS
0
1
2
3
4
5
6
7
8
21
SCK
0
0
0
0
0
0
23 24−31 32−39 24+(N−1)x8−1 .. 24+(N−1)x8
24+Nx8−1
BYTE ADDRESS*
OPCODE
SI
22
1
0
AN
DATA IN
A0
Data Data Data
Byte 1 Byte 2 Byte 3
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Data Byte N
7..1
0
* Please check the Byte Address Table (Table 11)
Figure 6. Page WRITE Timing
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7
NV25256MUW
Write Status Register
Write Protection
The Status Register is written by sending a WRSR
instruction according to timing shown in Figure 7. Only bits
2, 3, 4, 6 and 7 can be written using the WRSR command.
The Write Protect (WP) pin can be used to protect the
Block Protect bits BP0 and BP1 against being inadvertently
altered. When WP is low and the WPEN bit is set to “1”,
write operations to the Status Register are inhibited. WP
going low while CS is still low will interrupt a write to the
status register. If the internal write cycle has already been
initiated, WP going low will have no effect on any write
operation to the Status Register. The WP pin function is
blocked when the WPEN bit is set to “0”. The WP input
timing is shown in Figure 8.
CS
0
1
2
3
4
5
6
7
8
9
10
11
1
7
6
5
4
12
13
14
15
2
1
0
SCK
OPCODE
SI
0
0
0
0
0
DATA IN
0
0
MSB
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Figure 7. WRSR Timing
tWPS
tWPH
CS
SCK
WP
WP
Dashed Line = mode (1, 1)
Figure 8. WP Timing
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8
3
NV25256MUW
READ OPERATIONS
Read from Memory Array
SO pin. If the CS continues to be held low, the internal
address register defined by [A5:A0] bits is automatically
incremented and the next data byte from the IP is shifted out.
The byte address must not exceed the 64−byte page
boundary.
To read from memory, the host sends a READ instruction
followed by a 16−bit address (see Table 11 for the number
of significant address bits).
After receiving the last address bit, the NV25256 will
respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
NV25256 will shift out the contents of the status register on
the SO pin (Figure 10). The status register may be read at
any time, including during an internal write cycle. While the
internal write cycle is in progress, the RDSR command will
output the full content of the status register. For easy
detection of the internal write cycle completion, both during
writing to the memory array and to the status register, we
recommend sampling the RDY bit only through the polling
routine. After detecting the RDY bit “0”, the next RDSR
instruction will always output the expected content of the
status register.
Read Identification Page
Reading the additional 64−byte Identification Page (IP) is
achieved using the same Read command sequence as used
for Read from main memory array (Figure 9). The IPL bit
from the Status Register must be set (IPL = 1) before
attempting to read from the IP. The [A5:A0] are the address
significant bits that point to the data byte shifted out on the
CS
0
1
2
3
4
5
6
7
8
20 21
10
9
22 23
24
25
26 27
28 29
30
SCK
OPCODE
SI
0
0
0
0
0
0
BYTE ADDRESS*
1
1
A0
AN
DATA OUT
HIGH IMPEDANCE
SO
7
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 11)
6
5
4
3
2
1
0
MSB
Figure 9. READ Timing
CS
0
1
2
3
4
5
6
7
1
0
1
8
9
10
6
5
11
12
13
14
2
1
SCK
OPCODE
SI
SO
0
0
0
0
0
DATA OUT
HIGH IMPEDANCE
7
MSB
Dashed Line = mode (1, 1)
Figure 10. RDSR Timing
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9
4
3
0
NV25256MUW
Hold Operation
below the POR trigger level. This bi−directional POR
behavior protects the device against ‘brown−out’ failure
following a temporary loss of power.
The NV25256 device powers up in a write disable state
and in a low power standby mode. A WREN instruction
must be issued prior to any writes to the device.
After power up, the CS pin must be brought low to enter
a ready state and receive an instruction. After a successful
byte/page write or status register write, the device goes into
a write disable mode. The CS input must be set high after the
proper number of clock cycles to start the internal write
cycle. Access to the memory array during an internal write
cycle is ignored and programming is continued. Any invalid
op−code will be ignored and the serial output pin (SO) will
remain in the high impedance state.
The HOLD input can be used to pause communication
between host and NV25256. To pause, HOLD must be taken
low while SCK is low (Figure 11). During the hold condition
the device must remain selected (CS low). During the pause,
the data output pin (SO) is tri−stated (high impedance) and
SI transitions are ignored. To resume communication,
HOLD must be taken high while SCK is low.
Design Considerations
The NV25256 device incorporates Power−On Reset
(POR) circuitry which protects the internal logic against
powering up in the wrong state. The device will power up
into Standby mode after VCC exceeds the POR trigger level
and will power down into Reset mode when VCC drops
CS
tCD
tCD
SCK
tHD
tHD
HOLD
tHZ
HIGH IMPEDANCE
SO
tLZ
Dashed Line = mode (1, 1)
Figure 11. HOLD Timing
ORDERING INFORMATION (Notes 10 − 12)
Device Order
Number
Specific
Device
Marking
NV25256MUW3VTBG
S8W
Package
Type
UDFN8
(Wettable Flank)
Temperature Range
Lead Finish
Shipping†
−40°C to +125°C
NiPdAu
Tape & Reel, 3,000 Units /
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
10. All packages are RoHS−compliant (Lead−free, Halogen−free).
11. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
12. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office.
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN8 2x3, 0.5P
CASE 517DH
ISSUE A
1
SCALE 2:1
GENERIC
MARKING DIAGRAM*
1
XXXXX
AWLYWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
WL
Y
W
G
98AON06579G
UDFN8 2X3, 0.5P
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
DATE 10 DEC 2020
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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