NVATS4A101PZT4G

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AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. www.onsemi.com VDSS Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance 30 V RDS(on) Max 30 mΩ @ 10 V 51 mΩ @ 4.5 V ID Max 27 A ELECTRICAL CONNECTION P-Channel 2,4 Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C Operating Junction and Storage Temperature Symbol VDSS VGSS ID 3 Value 30 20 27 Unit V V A IDP 81 A PD 36 W 55 to +175 C Tj, Tstg 4 1 2 3 ATPAK MARKING Avalanche Energy (Single Pulse) (Note 2) EAS 25 mJ Avalanche Current (Note 3) IAV 13 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10 V, L = 200 H, IAV = 13 A 3 : L ≤ 200 H, Single pulse ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol Junction to Case Steady State (Tc = 25C) RJC Junction to Ambient (Note 4) RJA Value Unit 4.1 C/W 80.7 C/W See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2017 March 2017 - Rev. 0 1 Publication Order Number : NVATS4A101PZ/D NVATS4A101PZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 13 A 17 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID = 13 A, VGS = 10 V 23 30 mΩ 36 51 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time ID = 7 A, VGS = 4.5 V min typ max 30 Unit V 1.2 S 875 pF 220 pF Crss 155 pF td(on) 9.2 ns Rise Time tr 70 ns Turn-OFF Delay Time td(off) 80 ns Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS = 10 V, f = 1 MHz See Fig.1 VDS = 15 V, VGS = 10 V, ID = 25 A 70 ns 18.5 nC 3.2 nC 4.0 nC VSD IS = 25A, VGS = 0 V Forward Diode Voltage V 0.99 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS4A101PZ Drain Current, ID -- A VGS= --3.5V --10 --20 --15 --10 --5 25 °C --5 Tc=25°C Single pulse --1.0 --1.5 0 --2.0 0 --0.5 --1.0 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 70 60 50 ID= --7A --13A 40 30 20 4 = -V GS 40 ,I = --10V D V GS= 30 10 0 --25 1.0 3 5 7 --1.0 2 3 5 7 --10 2 125 150 175 3 5 7 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Forward Diode Voltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V f=1MHz 2 td(off) 100 7 tf 5 3 tr 2 1000 Ciss 7 5 3 Coss 2 Crss td(on) 10 100 7 5 --0.1 100 --10 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 75 IS -- VSD Drain Current, ID -- A 3 50 VGS=0V Single pulse 5°C °C 75 2 2 25 Tc= 7 --2 3 7 5 --0.1 --13A 20 0 --50 Source Current, IS -- A Forward Transconductance, gFS -- S 5 --5.0 7A 7 5 3 2 C 5° = Tc --4.5 Case Temperature, Tc -- °C °C 25 7 --4.0 = -, ID .5V 50 VDS= --10V Single pulse 10 --3.5 60 gFS -- ID 2 --3.0 Single pulse Gate-to-Source Voltage, VGS -- V 3 --2.5 70 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 5 --2.0 RDS(on) -- Tc 80 Tc=25°C Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 --1.5 Gate-to-Source Voltage, VGS -- V C --0.5 --25° 0 25°C 0 C 75° C --25 V --10. 0V --15 Tc= --25 ° --4.0V Tc= 75° --2 C 5°C --6 .0V --8.0 V VDS= --10V Single pulse . --4 --16. 0 Drain Current, ID -- A --20 ID -- VGS --30 5V 25° C ID -- VDS --25 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A www.onsemi.com 3 --30 NVATS4A101PZ VGS -- Qg --10 IDP = --81A (PW≤10μs) --100 10 --7 --6 --10 Operation in this area is limited by R DS (on). n --2 --1 Tc=25°C Single pulse 0 0 2 4 6 8 10 12 14 16 18 --0.1 --0.1 20 --1.0 PD -- Tc 35 30 25 20 15 10 5 0 0 25 50 75 100 125 EAS -- Ta 120 Avalanche Energy derating factor -- % 40 150 --50 --10 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC Power Dissipation, PD -- W o ati er --1.0 op --3 s ms s --4 1m 10 0m --5 ID = --27A 10 μs 0μ s 10 Drain Current, ID -- A --8 DC Gate-to-Source Voltage, VGS -- V --9 SOA --200 VDS= --15V ID= --25A 175 100 80 60 40 20 0 200 0 Case Temperature, Tc -- °C 25 50 75 100 125 150 175 200 Ambient Temperature, Ta -- °C RJC -- Pulse Time 10 Thermal Resistance, RJC -- C/W RJC=4.1C/W Duty Cycle=0.5 1.0 0.2 0.1 0.05 0.01 0.02 0.1 0.01 0.00001 ulse le P Sing 0.0001 0.001 0.01 Pulse Time, PT -- s www.onsemi.com 4 0.1 1.0 10 NVATS4A101PZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS4A101PZ ORDERING INFORMATION Device NVATS4A101PZT4G Marking Package Shipping (Qty / Packing) ATP101 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS4A101PZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6