NVATS4A104PZT4G

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NVATS4A104PZ Power MOSFET 30 V, 8.4 mΩ, 82 A, P-Channel The NVATS4A104PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. www.onsemi.com VDSS Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance 30 V RDS(on) Max 8.4 mΩ @ 10 V 13.5 mΩ @ 4.5 V ID Max 82 A ELECTRICAL CONNECTION P-Channel 2,4 Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C Operating Junction and Storage Temperature Symbol VDSS VGSS ID 3 Value 30 20 82 Unit V V A IDP 246 A PD 72 W 55 to +175 C 1 2 3 Tj, Tstg Avalanche Energy (Single Pulse) (Note 2) EAS 130 mJ Avalanche Current (Note 3) IAV 38 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 15 V, L = 100 H, IAV = 38 A 3 : L ≤ 100 H, Single pulse ATPAK MARKING ATP104 LOT No. ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter 4 Symbol Junction to Case Steady State (Tc = 25C) RJC Junction to Ambient (Note 4) RJA Value Unit 2.0 C/W 79.6 C/W See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2017 March 2017 - Rev. 0 1 Publication Order Number : NVATS4A104PZ/D NVATS4A104PZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Conditions Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 30 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 38 A 70 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID = 38 A, VGS = 10 V 6.4 8.4 mΩ 9.6 13.5 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) ID = 19 A, VGS = 4.5 V min typ max 30 Unit V 1.2 S 3,950 pF 880 pF Crss 610 pF td(on) 24 ns 520 ns 290 ns Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VDS = 10 V, f = 1 MHz See Fig.1 VDS = 15 V, VGS = 10 V, ID = 75 A 260 ns 76 nC 18 nC 13 nC VSD IS = 75 A, VGS = 0 V Forward Diode Voltage V 1.02 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS4A104PZ --35 --30 --25 --20 --15 Tc=25°C Single pulse 0 --0.5 --1.0 --1.5 --30 --10 0 --2.0 0 --0.5 28 26 24 22 ID= --19A --38A 20 18 16 14 12 10 8 6 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V 25° C --4.5 RDS(on) -- Tc 16 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- VGS Tc=25°C Single pulse --4.0 --40 Drain-to-Source Voltage, VDS -- V 30 --3.5 --50 25° C --5 0 --60 --20 --10 75° C VGS= --3.5V 5°C --40 Tc= 7 --45 --70 °C --50 --80 --2 5 --55 VDS= --10V Single pulse --90 Drain Current, ID -- A --60 Drain Current, ID -- A --4.0V --16.0 -V 10.0V --65 --6 .0V --4 .5 V --8.0 V --70 ID -- VGS --100 Tc= --25 °C ID -- VDS --75 Single pulse 14 9A 12 = VGS 10 = --1 , ID V 5 . --4 = 0V, I D = --1 V GS 8 --38A 6 4 2 4 --4 --6 --8 --10 --12 --14 0 --50 --16 --25 0 gFS -- ID VDS= --10V Single pulse 7 25 3 °C C 5° 2 = Tc 10 --2 75 °C 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 °C 5 Tc= 75 100 2 --100 VGS=0V 7 Single pulse 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Source Current, IS -- A Forward Transconductance, gFS -- S 2 SW Time -- ID 100 150 125 175 IS -- VSD --0.6 --0.8 --1.0 --1.2 --1.4 f=1MHz 7 5 1000 7 5 td(off) 3 tf 2 100 tr 7 5 3 Ciss 3 2 1000 Coss 7 Crss 5 td(on) 2 10 --0.1 75 Ciss, Coss, Crss -- VDS 10000 VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 50 Forward Diode Voltage, VSD -- V Drain Current, ID -- A 3 25 Case Temperature, Tc -- °C Gate-to-Source Voltage, VGS -- V --25° C --2 25°C 2 0 3 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A www.onsemi.com 3 --30 NVATS4A104PZ VGS -- Qg --9 SOA --1000 VDS= --15V ID= --75A IDP= --246A(PW≤10μs) --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 --7 --6 --5 --4 --3 ID= --82A --100 DC --10 s 1 10 0ms 0m s op era tio n μs Operation in this area is limited by RDS(on). --1.0 --1 Tc=25°C Single pulse 0 10 20 30 40 50 60 70 --0.1 --0.1 80 --1.0 PD -- Tc 70 60 50 40 30 20 10 0 0 25 50 75 100 125 EAS -- Ta 120 Avalanche Energy derating factor -- % 80 150 --100 --10 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC Power Dissipation, PD -- W 0μ s --2 0 175 100 80 60 40 20 0 200 0 25 50 75 100 125 150 175 200 Ambient Temperature, Ta -- °C Case Temperature, Tc -- °C RθJC -- Pulse Time 10 Thermal Resistance, RθJC -- ºC/W 10 10 1m RθJC=2.0ºC/W 1.0 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.01 0.02 ulse eP l Sing 0.01 0.00001 0.0001 0.001 0.01 Pulse Time, PT -- s www.onsemi.com 4 0.1 1.0 10 NVATS4A104PZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS4A104PZ ORDERING INFORMATION Device NVATS4A104PZT4G Marking Package Shipping (Qty / Packing) ATP104 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS4A104PZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 6