NVATS5A112PLZT4G

NVATS5A112PLZ Power MOSFET 60 V, 43 mΩ, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable  ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance VDSS 60 V ID Max 27 A 2,4 1 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Operating Junction and Storage Temperature RDS(on) Max 43 mΩ @ 10 V 59 mΩ @ 4.5 V 63 mΩ @ 4 V ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C www.onsemi.com Symbol VDSS VGSS ID Value 60 20 27 Unit V V A IDP 81 A PD 48 W 55 to +175 C Tj, Tstg Avalanche Energy (Single Pulse) (Note 2) EAS 50 mJ Avalanche Current (Note 3) IAV 13 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 10 V, L = 500 H, IAV = 13 A 3 : L ≤ 500 H, Single pulse THERMAL RESISTANCE RATINGS Parameter Symbol Junction to Case Steady State (Tc = 25C) RJC Junction to Ambient (Note 4) RJA Value Unit 3.1 C/W 80.5 C/W 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 4 1 2 3 ATPAK MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2016 June 2016 - Rev. 0 1 Publication Order Number : NVATS5A112PLZ/D NVATS5A112PLZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS ID = 1 mA, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 1 A Gate to Source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 2.6 V Forward Transconductance gFS VDS = 10 V, ID = 13 A 24 ID = 13 A, VGS = 10 V 33 43 m ID = 7 A, VGS = 4.5 V 42 59 m ID = 3.5 A, VGS = 4 V 45 63 m Static Drain to Source On-State Resistance RDS(on) Input Capacitance Ciss Conditions Value Parameter min typ 60 Unit V 1.2 1,450 VDS = 20 V, f = 1 MHz max S pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 10 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 150 ns Fall Time tf 120 ns Total Gate Charge Qg 33.5 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd See Fig.1 VDS = 30 V, VGS = 10 V, ID = 25 A 155 pF 125 pF 5.3 nC 7.9 nC VSD IS = 25 A, VGS = 0 V Forward Diode Voltage V 0.97 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS5A112PLZ www.onsemi.com 3 NVATS5A112PLZ www.onsemi.com 4 NVATS5A112PLZ PACKAGE DIMENSIONS unit : mm DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O 4 2 3 RECOMMENDED SOLDERING FOOTPRINT 6.5 1 : Gate 2 : Drain 1.5 2 4 : Drain 6.7 3 : Source 1.6 1 2.3 www.onsemi.com 5 2.3 NVATS5A112PLZ ORDERING INFORMATION Device NVATS5A112PLZT4G Marking Package Shipping (Qty / Packing) ATP112 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS5A112PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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