NVATS5A114PLZT4G

NVATS5A114PLZ Power MOSFET 60 V, 16 mΩ, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features  Low On-Resistance  High Current Capability  100% Avalanche Tested  AEC-Q101 qualified and PPAP capable ATPAK package is pin-compatible with DPAK (TO-252)  Pb-Free, Halogen Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 16 mΩ @ 10 V ID Max 60 V 21 mΩ @ 4.5 V 60 A 24 mΩ @ 4 V ELECTRICAL CONNECTION P-Channel Typical Applications  Reverse Battery Protection  Load Switch  Automotive Front Lighting  Automotive Body Controllers 2,4 1 1 : Gate 2 : Drain 3 : Source 4 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW  10 s, duty cycle  1% Power Dissipation Tc = 25C Operating Junction and Storage Temperature Symbol VDSS VGSS ID Value 60 20 60 Unit V V A IDP 180 A PD 72 W 55 to +175 C Tj, Tstg 3 4 1 2 3 ATPAK MARKING Avalanche Energy (Single Pulse) (Note 2) 100 mJ EAS Avalanche Current (Note 3) IAV 28 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD = 15 V, L = 200 H, IAV = 28 A 3 : L ≤ 100H, Single pulse THERMAL RESISTANCE RATINGS Parameter Symbol Junction to Case Steady State (Tc = 25C) RJC Junction to Ambient (Note 4) RJA Value Unit 2.0 C/W 79.6 C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 2 Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad. © Semiconductor Components Industries, LLC, 2016 September 2016 - Rev. 0 1 Publication Order Number : NVATS5A114PLZ/D NVATS5A114PLZ ELECTRICAL CHARACTERISTICS at Ta  25C (Note 5) Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS Gate to Source Leakage Current IGSS Gate Threshold Voltage VGS(th) Forward Transconductance gFS Static Drain to Source On-State Resistance Input Capacitance Conditions ID = 1 mA, VGS = 0 V VDS = 60 V, VGS = 0 V VGS = 16 V, VDS = 0 V 60 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 28 A 1.2 RDS(on)2 ID = 28 A, VGS = 10 V ID = 14 A, VGS = 4.5 V RDS(on)3 ID = 7 A, VGS = 4 V RDS(on)1 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Value min typ See Fig.1 VDS = 30 V, VGS = 10 V, ID = 55 A Unit V 1 A 10 A 2.6 V 65 12 S 16 m 15 21 m 16.5 24 m 4,000 VDS = 20 V, f = 1 MHz max pF 400 pF 315 pF 19 ns 200 ns 450 ns 300 ns 92 nC 15 nC 15.5 nC VSD IS = 55 A, VGS = 0 V Forward Diode Voltage V 0.95 1.5 Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Switching Time Test Circuit www.onsemi.com 2 NVATS5A114PLZ www.onsemi.com 3 NVATS5A114PLZ ORDERING INFORMATION Device NVATS5A114PLZT4G Marking Package Shipping (Qty / Packing) ATP114 DPAK(Single Gauge) / ATPAK (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVATS5A114PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O DATE 29 FEB 2012 ４ ２ ３ １ DOCUMENT NUMBER: DESCRIPTION: 98AON67243E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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