NVB072N65S3

DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, Automotive SUPERFET) III, Easy-Drive BVDSS RDS(on) MAX ID MAX 650 V 72 mΩ   V 44 A D 650 V, 72 mW, 44 A NVB072N65S3 G Description SuperFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with− stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. S N-Channel MOSFET D G Features • • • • • • • AEC−Q101 Qualified Max Junction Temperature 150°C Typ. RDS(on) = 61 mΩ Ultra Low Gate Charge (Typ. QG = 82 nC) Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant S D2PAK 3 LEAD CASE 418AJ MARKING DIAGRAM $Y&Z&3&K NVB 072N65S3 Typical Applications • Automotive PHEV−BEV DC−DC Converter • Automotive Onboard Charger for PHEV−BEV $Y &Z &3 &K NVB072N65S3 = onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 September, 2021 − Rev. 5 1 Publication Order Number: NVB072N65S3/D NVB072N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V DC ±30 V AC (f > 1 Hz) ±30 V Continuous (TC = 25°C) 44 A Continuous (TC = 100°C) 28 A IDM Pulsed Drain Current 110 A EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ EAR Repetitive Avalanche (Note 1) 3.12 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns 312 W PD Pulsed (Note 1) Power Dissipation (TC = 25°C) Derate Above 25°C TJ,TSTG TL Operating and Storage Temperature Range 2.5 W/°C −55 to +150 °C 300 °C Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.8 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD < 44 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RθJC Thermal Resistance, Junction to Case, Max. 0.37 °C/W RθJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2−oz Copper), Max. 62.5 °C/W 40 °C/W RθJA Thermal Resistance, Junction to Ambient (1 in2 Pad of 2−oz Copper), Max. PACKAGE MARKING AND ORDERING INFORMATION Part Number NVB072N65S3 Top Marking Package Packing Method Reel Size Tape Width Quantity NVB072N65S3 D2PAK−3 Tape and Reel 330 mm 24 mm 800 units www.onsemi.com 2 NVB072N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150°C 700 − − V OFF CHARACTERISTICS BVDSS Drain−to−Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25°C − 0.60 − V/°C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − 0.30 1 μA VDS = 520 V, VGS = 0 V, Tc = 125°C − 7.30 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA 2.5 − 4.5 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1.0 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 22 A, TJ = 25°C − 61 72 mΩ VGS = 10 V, ID = 22 A, TJ = 100°C − 107 − mΩ VDS = 20 V, ID = 44 A − 29.7 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 3300 − pF gFS Forward Transconductance DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance − 72.8 − pF Crss Reverse Transfer Capacitance − 14.6 − pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 724 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 104 − pF Total Gate Charge VDS = 400 V, VGS = 10 V, ID = 44 A (Note 4) − 82.0 − nC − 23.3 − nC − 34.0 − nC f = 1 MHz − 0.685 − Ω VDD = 400 V, ID = 44 A, VGS = 10 V, RG = 4.7 Ω (Note 4) − 26.3 − ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge RG Gate Resistance SWITCHING CHARACTERISTICS td(on) Turn−On Delay Time tr Turn−On Rise Time − 50 − ns td(off) Turn−Off Delay Time − 65.9 − ns Fall Time − 32 − ns Maximum Continuous Drain to Source Diode Forward Current − − 44 A ISM Maximum Plused Drain to Source Diode Forward Current − − 110 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 22 A − − 1.2 V trr Reverse Recovery Time VGS = 0 V, ISD = 44 A dIF/dt = 100 A/μs − 576 − nS Qrr Reverse Recovery Charge − 14.3 − μC tf DRAIN−SOURCE DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVB072N65S3 TYPICAL CHARACTERISTICS VGS 20 V Top 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 60 30 40 Pulse Duration = 250 μs TJ = 25°C ID, Drain Current (A) ID, Drain Current (A) 90 VGS 20 V Top 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 30 20 10 0 0 0 1 2 3 4 5 0 1 VDS, Drain to Source Voltage (V) 2 4 5 Figure 2. Saturation Characteristics 0.15 100 TC = 25°C RSDS)ON), Drain−Source On−Resistance (Ω) Pulse Duration = 250 μs Duty Cycle = 0.5% Max VDS = 5 V 10 TJ = 25°C TJ = 150°C 1 2 3 TJ = −55°C 4 5 0.10 VGS = 10 V VGS = 20 V 0.05 0 6 7 8 0 20 VGS, Gate to Source Voltage (V) 60 80 100K 10K Capacitance (pF) 10 1 0.1 TJ = 150°C C iss 1K Coss 100 10 0.01 TJ = 25°C 0.001 0 0.2 100 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage VGS = 0 V 100 40 ID, Drain Current (A) Figure 3. Transfer Characteristic IS, Reverse Drain Current (A) 3 VDS, Drain to Source Voltage (V) Figure 1. Saturation Characteristics ID, Drain Current (A) Pulse Duration = 250 μs TJ = 150°C 0.4 TJ = −55°C 0.6 0.8 1.0 1 1.2 f = 1 MHz VGS = 0 V 0.1 Crss 1 10 100 1000 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Figure 5. Forward Diode Characteristics Figure 6. Capacitance vs. Drain to Source Volatage www.onsemi.com 4 NVB072N65S3 TYPICAL CHARACTERISTICS (continued) 1.2 ID = 75 A VDS = 130 V Normalized Drain to Source Breakdown Voltage VGS, Gate to Source Voltage (V) 10 8 VDS = 400 V 6 4 2 0 0 15 30 45 75 60 ID = 10 mA 1.1 1.0 0.9 0.8 −80 90 −40 QG, Gate Charge (nC) 0 40 80 120 160 TJ, Junction Temperature (°C) Figure 7. Gate Charge vs. Gate to Source Voltage Figure 8. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 2.0 1.5 1.0 ID = 44 A VGS = 10 V 0.5 0 −80 −40 10 0 40 80 120 160 1 ms Operation in this Area is Limited by RDS(on) 1 10 ms Single Pulse TJ = 150°C TC = 25°C 1 DC 10 100 1000 TJ, Junction Temperature (°C) VDS, Drain−Source Voltage (V) Figure 9. Normalized RDSON vs. Junction Temperature Figure 10. Forward Bias Safe Operating Area 20 18 50 16 14 40 EOSS (μJ) ID, Drain Current (A) 100 us 0.1 60 30 20 12 10 8 6 4 10 0 10 us 100 2.5 ID, Drain Current (A) Normalized Drain to Source ON−Resistance 3.0 25 50 75 100 125 2 0 150 TC, Case Temperature (°C) 0 100 200 300 400 500 600 VDS, Drain to Source Voltage (V) Figure 11. Maximum Continuous Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain to Source Voltage www.onsemi.com 5 700 NVB072N65S3 TYPICAL CHARACTERISTICS (continued) Power Dissipation Multiplier 1.2 1000 IDM, Peak Current (A) 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 100 Current Max Limited 10 150 0.00001 0.0001 TC, Case Temperature (°C) Normalized Gate Threshold Voltage RDS(on), On−Resistance (m) TJ = 150°C 200 Pulse Duration = 250 μs Duty Cycle = 0.5% Max ID = 44 A TJ = 25°C 50 0 6 7 8 1 9 10 1.2 VGS = VDS ID = 1 mA 1.0 0.8 0.6 0.4 −80 −40 VGS, Gate to Source Voltage (V) 0 40 80 120 160 TJ, Junction Temperature (°C) Figure 15. On−Resistance vs. Gate to Source Voltage Normalized Thermal Impedance, ZθJC 0.1 Figure 14. Peak Current Capability 250 100 0.01 t, Rectangular Pulse Duration (s) Figure 13. Normalized Power Dissipation vs. Case Temperature 150 0.001 Figure 16. Normalized Gate Threshold Voltage vs. Temperature 10 1 DUTY CYCLE − DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 0.001 PDM t1 t2 ZJC(t) = r(t) x RJC Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1/t2 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Rectangular Pulse Duration (s) Figure 17. Normalized Maximum Transient Thermal Impedance SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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