NVB150N65S3F

NVB150N65S3F MOSFET - Power 650 V, 150 mW, 24 A, Single N−Channel, D2PAK Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 114 mW Ultra Low Gate Charge (Typ. Qg = 43 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 385 pF) 100% Avalanche Tested Qualified with AEC−Q101 These Devices are Pb−Free and are RoHS Compliant Typical Applications www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 650 V 150 mW @ 10 V 24 A D G S N−CHANNEL MOSFET D G • Automotive On Board Charger • Automotive DC/DC Converter for HEV S D2PAK−3 TO−263 CASE 418AJ MARKING DIAGRAM &Z&3&K NVB 150N65S3F &Z &3 &K NVB150N65S3F = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2019 May, 2019 − Rev. 0 1 Publication Order Number: NVB150N65S3F/D NVB150N65S3F Table 1. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Parameter Symbol VDSS Drain−to−Source Voltage VGS Gate−to−Source Voltage ID Drain Current IDM Drain Current EAS Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 24 − Continuous (TC = 100°C) 15.2 60 A Single Pulse Avalanche Energy (Note 2) 275 mJ IAS Avalanche Current 3.2 A EAR Repeated Avalanche Energy (Note 1) 1.92 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD TJ, Tstg TL − Pulsed (Note 1) A Power Dissipation TC = 25°C 192 W − Derate Above 25°C 1.54 W/°C −55 to 150 °C 300 °C Operating Junction and Storage Temperature Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse*width limited by maximum junction temperature. 2. IAS = 3.2 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/_s, VDD ≤ 400 V, starting TC = 25°C. Table 2. THERMAL RESISTANCE RATINGS Symbol Parameter RqJC Thermal Resistance, Junction−to−Case, Max. RqJA Thermal Resistance, Junction−to−Ambient, Max. Max Unit 0.65 °C/W 40 www.onsemi.com 2 NVB150N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25°C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − − V OFF CHARACTERISTICS BVDSS DBVDSS/DTJ IDSS IGSS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 20 mA, Referenced to 25°C − 0.61 − V/°C Zero Gate Voltage Drain Current VDS = 650 V, VDS = 0 V − − 10 mA VDS = 520 V, TC = 125°C − 128 − mA VGS = 0 V, ID = 1 mA, TJ = 25°C − − ±100 nA 3.0 − 5.0 V Gate−to−Body Leakage Current ON CHARACTERISTICS VGS(th) Drain−to−Source Breakdown Voltage VGS = VDS, ID = 0.54 mA RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 12 A − 114 150 mW Forward Transconductance VGS = 20 V, ID = 12 A − 14 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 1999 − pF − 40.1 − pF pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 to 400 V, VGS = 0 V − 385 − Coss(er.) Energy Related Output Capacitance VDS = 0 to 400 V, VGS = 0 V − 72 − pF Qg(total) Total Gate Charge at 10 V VDS = 400 V, ID = 12 A, VGS = 10 V (Note 4) − 43 − nC − 13 − nC − 17 − nC F = 1 MHz − 5 − W VDD = 400 V, ID = 12 A, VGS = 10 V, RG = 4.7 W (Note 4) − 21 − ns − 13 − ns Turn-Off Delay Time − 53 − ns Fall Time − 3 − ns Maximum Continuous Source−to−Drain Diode Forward Current − − 24 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current − − 60 A VSD Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS, VGS = 10 V td(on) tr td(off) tf Turn-On Delay Time Rise Time SOURCE−DRAIN DIODE CHARACTERISTICS IS Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 12 A − − 1.3 V trr Reverse−Recovery Time − 88 − ns Qrr Reverse−Recovery Charge VGS = 0 V, ISD = 12 A, dIF/dt = 100 A/ms − 300 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVB150N65S3F TYPICAL CHARACTERISTICS 100 100 ID, DRAIN CURRENT (A) 8.0 V 7.0 V 6.5 V 10 6.0 V 5.5 V 1 0.1 1 ID, DRAIN CURRENT (A) 5.5 V 8.0 V 7.0 V 6.5 V 0 Figure 2. On−Region Characteristics 1505C TJ = 25°C TJ = 150°C 3 TJ = −55°C 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.3 0.2 VGS = 10 V 0.1 0 VGS = 20 V 0 20 30 40 50 100K VGS = 0 V 10K 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 Ciss 1K 100 Coss 10 1 TJ = −55°C 0 60 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) 10 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics 0.001 20 Figure 1. On−Region Characteristics 255C 10 100 2 VDS, DRAIN−SOURCE VOLTAGE (V) VDS = 20 V 2 6.0 V 10 VDS, DRAIN−SOURCE VOLTAGE (V) 100 1 VGS = 10 V 1 10 RDS(on), DRAIN−SOURCE ON−RESISTANCE (mW) ID, DRAIN CURRENT (A) VGS = 10 V 0.5 1.0 1.5 0.1 2.0 Crss VGS = 0 V f = 1 MHz 0.1 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 1K NVB150N65S3F VGS, GATE−SOURCE VOLTAGE (V) 10 BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS VDS = 130 V ID = 12 A 8 VDS = 400 V 6 4 2 0 0 10 20 30 40 50 1.0 0.9 0.8 −75 1.5 1.0 0.5 75 125 −25 25 75 125 100 Operation in this area is limited by RDS(on) 175 10 10 ms 100 ms 1 1 ms 0.01 175 10 ms 0.1 TC = 25°C TJ = 150°C Single Pulse 1 DC 10 100 1000 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 12 20 10 16 8 EOSS (mJ) 24 12 6 8 4 4 2 25 25 Figure 8. Breakdown Voltage Variation vs. Temperature 2.0 0 −25 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) ID, DRAIN CURRENT (A) 1.1 TJ, JUNCTION TEMPERATURE (°C) ID = 12 A VGS = 10 V 0 −75 VGS = 0 V ID = 10 mA QG, TOTAL GATE CHARGE (nC) 3.0 2.5 1.2 50 75 100 125 0 150 0 100 200 300 400 500 600 700 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVB150N65S3F TYPICAL CHARACTERISTICS 1000 IDM, PEAK CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 RDS(on), ON−RESISTANCE (W) 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE (s) Figure 13. Normalized Power Dissipation vs. Case Temperature Figure 14. Peak Current Capability ID = 12 A 400 TJ = 150°C 300 200 TJ = 25°C 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (Normalized) Current Limited Max TC, CASE TEMPERATURE (°C) 500 0 100 10 150 GATE THRESHOLD VOLTAGE (Normalized) POWER DISSIPATION MULTIPLIER 1.2 5.5 7.0 8.5 10 1 1.4 ID = 0.54 mA 1.2 1.0 0.8 0.6 0.4 −80 −40 0 40 80 120 160 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 15. RDS(on) vs. Gate Voltage Figure 16. Normalized Gate Threshold Voltage vs. Temperature 10 1 0.1 0.01 0.001 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 P DM 0.01 t1 Single Pulse 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 17. Transient Thermal Response SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC. www.onsemi.com 6 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.65°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative