NVB6411ANT4G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. NTB6411AN, NTP6411AN, NVB6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features • • • • • Low RDS(on) High Current Capability 100% Avalanche Tested NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 100 V N−Channel D Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V ID 77 A Continuous Drain Current RqJC Steady State Power Dissipation RqJC Steady State Pulsed Drain Current TC = 25°C TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 56 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds G S 54 PD 217 W IDM 285 A TJ, Tstg −55 to +175 °C IS 77 A EAS 470 mJ TL 260 4 4 1 1 2 3 4 Drain Max Unit Junction−to−Case (Drain) Steady State RqJC 0.69 °C/W Junction−to−Ambient (Note 1) RqJA 33 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 °C Symbol 2 3 THERMAL RESISTANCE RATINGS Parameter 77 A 14 mW @ 10 V MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter ID MAX (Note 1) RDS(ON) MAX MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain NTB 6411ANG AYWW NTP 6411ANG AYWW 1 Gate 3 Source 2 Drain 1 Gate 2 Drain 3 Source 6411AN = Specific Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 2 1 Publication Order Number: NTB6411AN/D NTB6411AN, NTP6411AN, NVB6411AN ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified) Characteristics Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 100 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 113 VGS = 0 V, VDS = 100 V mV/°C TJ = 25°C 1.0 TJ = 125°C 100 IGSS VDS = 0 V, VGS = $20 V VGS(th) VGS = VDS, ID = 250 mA $100 mA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(th)/TJ 2.0 4.0 8.6 V mV/°C RDS(on) VGS = 10 V, ID = 72 A 12.7 gFS VDS = 5 V, ID = 10 A 24 S 3700 pF Forward Transconductance 14 mW CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 550 200 Total Gate Charge QG(TOT) 100 Threshold Gate Charge QG(TH) nC 4.0 VGS = 10 V, VDS = 80 V, ID = 72 A Gate−to−Source Charge QGS 16 Gate−to−Drain Charge QGD Plateau Voltage VGP 5.2 V Gate Resistance RG 3.1 W 16 ns 47 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 10 V, VDD = 80 V, ID = 72 A, RG = 6.2 W tf 144 107 157 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge IS = 72 A TJ = 25°C 0.92 TJ = 125°C 0.86 94 VGS = 0 V, IS = 72 A, dIS/dt = 100 A/ms QRR http://onsemi.com 2 V ns 64 30 330 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.3 nC NTB6411AN, NTP6411AN, NVB6411AN TJ = 25°C ID, DRAIN CURRENT (A) 140 160 10 V 7.5 V 6.0 V 100 80 5.6 V 60 40 0 5.0 V 1 2 3 120 100 80 60 TJ = 25°C 40 TJ = 125°C 20 VGS = 4.4 V 0 VDS w 10 V 140 120 20 4 0 5 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2 VGS = 10 V TJ = 175°C 0.03 RDS(on) 0.025 2.5 0.02 0.01 5 6 7 8 9 0 10 TJ = −55°C 10 20 30 40 50 60 70 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate Voltage Figure 4. On−Resistance versus Drain Current and Temperature 100000 ID = 72 A VGS = 10 V IDSS, LEAKAGE (nA) 3 TJ = 125°C TJ = 25°C 0.015 0.005 8 0.04 ID = 72 A TJ = 25°C 0.035 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 6.5 V ID, DRAIN CURRENT (A) 160 2 1.5 80 VGS = 0 V 10000 TJ = 150°C TJ = 125°C 1 0.5 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 1000 10 Figure 5. On−Resistance Variation with Temperature 20 30 40 50 60 70 80 90 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 NTB6411AN, NTP6411AN, NVB6411AN 7000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V 6000 5000 4000 Ciss 3000 2000 1000 0 Coss Crss 0 10 20 30 40 50 60 70 80 90 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 VDS 6 60 Qgd 40 2 0 VDS = 80 V ID = 72 A TJ = 25°C 0 20 40 60 80 Qg, TOTAL GATE CHARGE (nC) 20 0 100 Figure 8. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge TJ = 25°C VGS = 0 V 70 tf td(off) tr td(on) 10 1 Qgs 80 100 1 VGS 4 IS, SOURCE CURRENT (A) t, TIME (ns) VDS = 80 V ID = 72 A VGS = 10 V 80 8 Figure 7. Capacitance Variation 1000 100 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 8000 10 RG, GATE RESISTANCE (W) 60 50 40 30 20 10 0 0.4 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 Figure 10. Diode Forward Voltage versus Current 1000 500 AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) ID = 56 A 10 ms 100 100 ms 1 ms 10 VGS = 10 V SINGLE PULSE TC = 25°C 1 0.1 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 Figure 11. Maximum Rated Forward Biased Safe Operating Area 400 300 200 100 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTB6411AN, NTP6411AN, NVB6411AN 1 D = 0.5 R(t) (°C/W) 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 t, PULSE TIME (s) 0.01 0.1 1 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTB6411ANG D2PAK (Pb−Free) 50 Units / Rail NTB6411ANT4G D2PAK (Pb−Free) 800 / Tape & Reel NTP6411ANG TO−220 (Pb−Free) 50 Units / Rail NVB6411ANT4G D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTB6411AN, NTP6411AN, NVB6411AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 1 2 A S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN P U L M DIM A B C D E F G H J K L M N P R S V MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTB6411AN, NTP6411AN, NVB6411AN PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTB6411AN/D