MOSFET - Single N-Channel
150 V, 4.1 mW, 185 A
NVBGS4D1N15MC
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Lowers Switching Noise/EMI
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
4.1 mW @ 10 V
150 V
Typical Applications
ID MAX
185 A
4.7 mW @ 8 V
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D (TAB)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
150
V
Gate−to−Source Voltage
VGS
±20
V
ID
185
A
PD
316
W
ID
20
A
Parameter
Continuous Drain
Current RqJC
(Note 2)
Power Dissipation
RqJC (Note 2)
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
Steady
State
Steady
State
TA = 25°C
3.7
W
IDM
2564
A
TJ, Tstg
−55 to
+175
°C
IS
263
A
Single Pulse Drain−to−Source Avalanche
Energy (IL = 81.5 Apk, L = 0.1 mH)
EAS
332
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
December, 2019 − Rev. 0
S (Pins 2,3,4,5,6,7)
N−CHANNEL MOSFET
TC = 25°C
PD
Pulsed Drain Current
G (Pin 1)
1
MARKING
DIAGRAM
D2PAK7
CASE 418AY
XXXX
A
Y
WW
G
XXXXXXXXX
AYWWG
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NVBGS4D1N15MC
Package
Shipping†
D2PAK7
(Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVBGS4D1N15MC/D
NVBGS4D1N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 2)
Parameter
RqJC
0.5
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
150
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
20.28
ID = 250 mA, referenced to 25°C
VGS = 0 V,
VDS = 120 V
V
mV/°C
TJ = 25°C
1
mA
TJ = 125°C
10
mA
±100
nA
IGSS
VGS = ±20 V, VDS = 0 V
VGS(TH)
VGS = VDS, ID = 574 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
ID = 250 mA, referenced to 25°C
2.5
3.5
4.5
−10.21
V
mV/°C
VGS = 10 V, ID = 104 A
3.3
4.1
VGS = 8 V, ID = 52 A
3.5
4.7
mW
Forward Transconductance
gFS
VDS = 5 V, ID = 90 A
10.9
S
Gate−Resistance
RG
TA = 25°C
1.2
W
7285
pF
CHARGES & CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
10.6
Total Gate Charge
QG(TOT)
88.9
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Output Charge
QOSS
VGS = 0 V, f = 1 MHz, VDS = 75 V
VGS = 10 V, VDS = 75 V,
ID = 104 A
2025
nC
22.8
37.5
13.0
VGS = 0 V, VDS = 75 V
272
nC
49
ns
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 10 V, VDS = 75 V,
ID = 104 A, RG = 6 W
tf
38
64
10
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 104 A, TJ = 25°C
0.88
VGS = 0 V, IS = 104 A, TJ = 125°C
0.79
89
VGS = 0 V, IS = 104 A,
dIS/dt = 100 A/ms
QRR
1.2
V
ns
47
42
164
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperature
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2
NVBGS4D1N15MC
TYPICAL CHARACTERISTICS
180
135
120
ID, DRAIN CURRENT (A)
VGS = 10 V to 6.5 V
165
150
6.0 V
105
90
75
60
45
30
15
0
5.5 V
5.0 V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
105
90
75
TJ = 25°C
60
45
30
15
0
TJ = 175°C
0
60
50
40
30
20
10
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4
5
6
7
8
IDSS, LEAKAGE (nA)
1.8
1.6
1.4
1.2
10
TJ = 25°C
4.5
4.0
VGS = 8 V
3.5
VGS = 10 V
3.0
2.5
2.0
0
25
50
75
100 125 150 175 200 225 250
ID, DRAIN CURRENT (A)
1M
VGS = 10 V
ID = 104 A
2.0
9
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
3
5.0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.2
2
Figure 2. Transfer Characteristics
70
2.4
1
TJ = −55°C
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 104 A
5.5
135
120
VGS, GATE−TO−SOURCE VOLTAGE (V)
80
0
VGS = 5 V
165
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
180
1.0
VGS = 0 V
TJ = 175°C
100K
TJ = 150°C
10K
TJ = 125°C
1K
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
0
15
30
45
60
75
90
105 120 135 150
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVBGS4D1N15MC
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
100
10
1
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
50
25
100
75
125
150
8
7
5
4
3
VDS = 75 V
ID = 104 A
TJ = 25°C
2
1
0
30
20
40
50
60
70
80
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
IS, SOURCE CURRENT (A)
td(off)
100
tr
td(on)
tf
0
10
0
1000
10
QGD
QGS
6
QG, TOTAL GATE CHARGE (nC)
VGS = 10 V
VDS = 75 V
ID = 104 A
t, TIME (ns)
QG(TOT)
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
10
20
30
40
50
VGS = 0 V
100
10
1
0.1
60
90
TJ = 175°C
TJ = 25°C TJ = −55°C
TJ = 150°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100
100 ms
TC = 25°C
VGS ≤ 10 V
Single Pulse
10
1
0.1
100
IPEAK, (A)
ID, DRAIN CURRENT (A)
1000
RDS(on) Limit
Thermal Limit
Package Limit
1
10
TJ(initial) = 25°C
10
TJ(initial) = 125°C
1 ms
10 ms
100 ms & 1 sec
1
100
1E−06 1E−05 1E−04
1E−03
1E−02
1E−01 1E+00
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVBGS4D1N15MC
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
ZqJC, (°C/W)
0.1
0.01
20%
10%
5%
2%
1%
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.01
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO−263 7 LD)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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