NVBLS001N06C

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 mW, 422 A NVBLS001N06C Features • • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Lowers Switching Noise/EMI AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 60 V 0.9 mW @ 10 V 422 A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V ID 422 A Continuous Drain Current RqJC (Note 2) Power Dissipation RqJC (Note 2) Continuous Drain Current RqJA (Notes 1, 2) TC = 25°C Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current 298 PD TC = 100°C TA = 25°C Steady State ID Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 39 A) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) S A 51 36 PD 4.2 IDM 900 A TJ, Tstg −55 to +175 °C TA = 100°C TA = 25°C, tp = 10 ms W 284 142 TA = 100°C TA = 25°C W 2.1 IS 236 A EAS 1640 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter G Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 0.53 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 36 H−PSOF8L CASE 100CU ORDERING INFORMATION Device NVBLS001N06C Package Shipping† H−PSOF8L (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 July, 2021 − Rev. 2 1 Publication Order Number: NVBLS001N06C/D NVBLS001N06C Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS ID = 250 mA, VGS = 0 V 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 562 mA, ref to 25°C Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VDS = 60 V, VGS = 0 V V 26 mV/°C TJ = 25°C 10 mA TJ = 125°C 100 mA 100 nA 4.0 V IGSS VDS = 0 V, VGS = 20 V VGS(th) VGS = VDS, ID = 562 mA VGS(th)/TJ ID = 562 mA, ref to 25°C 9.9 RDS(on) VGS = 10 V, ID = 80 A 0.75 gFS VDS = 5 V, ID = 80 A 290 S Input Capacitance Ciss VGS = 0 V, VDS = 30 V, f = 10 kHz 11575 pF Output Capacitance Coss 5973 pF Reverse Transfer Capacitance Crss 76 pF 143 nC 31 nC ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance 2.0 2.8 mV/°C 0.9 mW CHARGES & CAPACTIANCES VGS = 10 V, VDS = 30 V, ID = 80 A Total Gate Charge QG(tot) Threshold Gate Charge QG(th) Gate−to−Source Charge Qgs 54 nC Gate−to−Drain Charge Qgd 13 nC 34 ns 53 ns td(off) 119 ns tf 91 ns SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr VGS = 10 V, VDS = 30 V, ID = 80 A, RG = 6 W DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD IS = 80 A, VGS = 0 V TJ = 25°C 0.79 1.2 V IS = 80 A, VGS = 0 V TJ = 125°C 0.66 V 120 ns 60 ns Reverse Recovery Time trr Charge Time ta Discharge Time tb 60 ns Reverse Recovery Charge Qrr 322 nC VGS = 0 V, dIS/dt = 100 A/ms, IS = 56 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NVBLS001N06C TYPICAL CHARACTERISTICS 1200 1100 10 V & 8 V 500 7.0 V VDS = 5 V 6.0 V ID, DRAIN CURRENT (A) 800 700 600 500 VGS = 5.0 V 400 300 4.5 V 200 100 0 0.0 0.5 1.5 1.0 2.5 2.0 300 200 TJ = 25°C 100 TJ = 125°C 3.0 5.0 4.5 Figure 2. Transfer Characteristics TJ = 25°C ID = 80 A 2.25 2.0 1.75 1.5 1.25 1.0 0.75 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 2.5 2.25 2.0 1.75 VGS = 5 V 1.25 VGS = 6 V 1.0 VGS = 7 V 0.75 0.5 VGS = 10 V 0 50 100 150 200 250 300 350 400 ID, DRAIN CURRENT (A) 1M IDSS, LEAKAGE CURRENT (nA) VGS = 10 V ID = 80 A 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 VGS = 5.5 V 1.5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 0.7 −50 −25 5.5 2.75 Figure 3. On−Resistance vs. VGS RDS(on), NORMALIZED DRAIN− SOURCE ON−RESISTANCE 4.0 Figure 1. On−Region Characteristics 2.5 1.6 3.5 3.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 1.7 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2.75 0.5 4.5 400 0 2.5 RDS(on), DRAIN−SOURCE RESISTANCE (mW) RDS(on), DRAIN−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 1000 900 25 50 75 100 125 150 TJ = 150°C 10K TJ = 125°C 1K TJ = 85°C 100 10 175 TJ = 175°C 100K VGS = 0 V 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 60 NVBLS001N06C TYPICAL CHARACTERISTICS CAPACITANCE (pF) 10K Ciss Coss 1K 100 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 100K VGS = 0 V TJ = 25°C f = 10 kHz 0 Crss 10 20 30 40 50 60 QGD 4 3 VDS = 30 V ID = 80 A TJ = 25°C 2 1 0 0 20 40 60 80 100 120 140 160 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge VGS = 0 V tr td(off) IS, SOURCE CURRENT (A) t, TIME (ns) QGS Figure 7. Capacitance Variation td(on) tf 1 100 10 TJ = 175°C 1 TJ = 150°C 0.1 0.2 100 10 0.3 0.4 0.5 TJ = 25°C 0.6 0.7 TJ = −55°C 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 100 10 ms 10 0.5 ms 1 ms Single Pulse TC = 25°C VGS ≤ 10 V RDS(on) Limit Thermal Limit Package Limit 0.1 100 1 10 TJ(initial) = 25°C IPEAK (A) ID, DRAIN CURRENT (A) 7 6 5 1000 100 0.1 9 8 QG, TOTAL GATE CHARGE (nC) VGS = 10 V VDS = 30 V ID = 80 A 1 QT VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 10 11 10 TJ(initial) = 100°C 10 10 ms 100 1000 1 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Avalanche Characteristics www.onsemi.com 4 0.01 NVBLS001N06C TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 0.001 0.000001 RqJA Steady State = 36°C/W Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 13. Thermal Characteristics (Junction−to−Ambient) www.onsemi.com 5 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS H−PSOF8L 11.68x9.80 CASE 100CU ISSUE B DATE 20 MAY 2022 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXX XXXXXXXX A Y WW ZZ XXXX DOCUMENT NUMBER: DESCRIPTION: = Assembly Location = Year = Work Week = Assembly Lot Code = Specific Device Code 98AON13813G H−PSOF8L 11.68x9.80 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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